| Patent application number | Description | Published |
|---|
| 20090014839 | Nitride-Based Semiconductor Device - A nitride-based semiconductor device includes: an n-GaN layer | 01-15-2009 |
| 20090166607 | Nitride Semiconductor Light Emitting Element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 07-02-2009 |
| 20090166608 | Light emitting semiconductor device and fabrication method for the light emitting semiconductor device - A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity. | 07-02-2009 |
| 20090272992 | Semiconductor Light-Emitting Device and Process for Producing the Same - A semiconductor light emitting device of the present invention includes a substrate ( | 11-05-2009 |
| 20100065812 | Nitride semiconductor light emitting element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 03-18-2010 |
| 20100102341 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes: a transparent substrate including a first principal surface and a second principal surface opposite with the first principal surface, in which side surfaces between the first principal surface and the second principal surface are rough surfaces; and a semiconductor light emitting element that is arranged on the first principal surface of the transparent substrate and is composed by stacking nitride semiconductors on each other. | 04-29-2010 |
