| Patent application number | Description | Published |
|---|
| 20080251765 | FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE USING THE SAME - An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith. | 10-16-2008 |
| 20080253952 | FLUORESCENT SUBSTANCE CONTAINING NITROGEN, METHOD FOR MANUFACTURING THE SAME, AND LIGHT-EMITTING DEVICE - Disclosed is a method for manufacturing a nitrogen-containing fluorescent substance comprising accommodating an oxide fluorescent substance containing two or more elements in a receptacle made of a material containing carbon, and sintering the oxide fluorescent substance in a mixed gas atmosphere containing nitrogen gas. | 10-16-2008 |
| 20080283797 | FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE USING THE SAME - Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu | 11-20-2008 |
| 20090127507 | LUMINESCENT MATERIAL - A luminescent material is provided, which includes a material formed of a single composition containing the main crystal phase and an activator which causes light emission. The material exhibits a narrowband light emission spectrum in a wavelength ranging from 540 nm to 550 nm and a broadband light emission spectrum in a wavelength ranging from 500 nm to 600 nm when the material is excited with light having the main light emission peak having a wavelength ranging from 370 nm to 460 nm. | 05-21-2009 |
| 20090176323 | PROCESS FOR PRODUCING LIGHT-EMITTING SEMICONDUCTOR DEVICE - A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material. | 07-09-2009 |
| 20090285995 | FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE USING THE SAME - An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith. | 11-19-2009 |
| 20100166407 | LIGHTING DEVICE, IMAGE PICKUP APPARATUS AND PORTABLE TERMINAL UNIT - A lighting device including a substrate ( | 07-01-2010 |
