| Patent application number | Description | Published |
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| 20080277736 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has an n-channel MISFET having first diffusion layers formed in a first region of a surface portion of a semiconductor substrate so as to sandwich a first channel region therebetween, a first gate insulating film formed on the first channel region, and a first gate electrode including a first metal layer formed on the first gate insulating film, and a first n-type polysilicon film formed on the first metal layer, and a p-channel MISFET having second diffusion layers containing boron as a dopant and formed in a second region of the surface portion of the semiconductor substrate so as to sandwich a second channel region therebetween, a second gate insulating film formed on the second channel region, and a second gate electrode including a second metal layer containing nitrogen or carbon and formed on the second gate insulating film and a second n-type polysilicon film formed on the second metal layer and having a boron concentration of not more than 5×10 | 11-13-2008 |
| 20090098693 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: forming a first region and a second region at a main surface of a semiconductor substrate; forming a gate insulating film containing Hf or Zr and oxygen on the first region and the second region; forming a first metallic film on the gate insulating film; forming a second metallic film on the first metallic film; removing a portion of the second metallic film; forming a third metallic film on the second metallic film and a portion of the first metallic film exposed by removing the portion of the second metallic film; and thermally treating so that constituent elements of the second metallic film is diffused into the gate insulating film via the first metallic film. | 04-16-2009 |
| 20090267159 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate, a p-channel MIS transistor formed on the substrate, the p-channel transistor having a first gate dielectric formed on the substrate and a first gate electrode layer formed on the first dielectric, and an n-channel MIS transistor formed on the substrate, the n-channel transistor having a second gate dielectric formed on the substrate and a second gate electrode layer formed on the second dielectric. A bottom layer of the first gate electrode layer in contact with the first gate dielectric and a bottom layer of the second gate electrode layer in contact with the second gate dielectric have the same orientation and the same composition including Ta and C, and a mole ratio of Ta to a total of C and Ta, (Ta/(Ta+C)), is larger than 0.5. | 10-29-2009 |
| 20090267162 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprises: forming a gate insulator on a substrate, the gate insulator including a high-dielectric film in whole or part; forming a first metal film on the gate insulator; forming a second metal film on the first metal film; and forming a reaction film between the gate insulator and the first metal film by letting the high-dielectric film and the first metal film react with each other through a thermal treatment. | 10-29-2009 |
| 20100065918 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate containing a p-type diffusion layer and an n-type diffusion layer which are separated by an element separation film; a gate insulating film formed on or above the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate, respectively; a gate electrode containing a metallic film and formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metallic film; and a silicon-containing layer formed on the metallic film. | 03-18-2010 |
| 20100090292 | Semiconductor device and method of manufacturing same - A method of manufacturing a semiconductor device, comprises: forming a high dielectric gate insulating film in an nMIS formation region and a pMIS formation region of a semiconductor substrate; forming a first metal film on the high dielectric gate insulating film, the first metal film; removing the first metal film in the nMIS formation region; forming a second metal film on the high dielectric gate insulating film of the nMIS formation region and on the first metal film of the pMIS formation region; and processing the first metal film and the second metal film. The high dielectric gate insulating film has a dielectric constant higher than a dielectric constant of silicon oxide. The first metal film does not contain silicon and germanium. The second metal film contains at least one of silicon and germanium. | 04-15-2010 |
| 20100133626 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film. | 06-03-2010 |
| 20100176456 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate including a P-type semiconductor region, and an N channel MOSFET formed in the P-type semiconductor region, the N channel MOSFET including an insulating film of silicon oxide film or silicon oxynitride film formed on the semiconductor substrate, a gate insulating film including hafnium and formed on the insulating film, a lanthanum oxide film having a film thickness not larger than a predetermined value and formed between the gate insulating film and insulating film, and a gate electrode including a titanium nitride film having a N/Ti atomic ratio less than 1. | 07-15-2010 |
| 20100176458 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate insulating film is formed on a main surface of a substrate in which an element isolation region is formed. A metal film is formed on the gate insulating film. A silicon film is formed on the metal film. A gate electrode of a MIS transistor composed of a stacked structure of the silicon film and metal film is formed on an element region and a high-resistance element composed of a stacked structure of the silicon film and metal film is formed on the element isolation region by patterning the silicon film and metal film. An acid-resistant insulating film is formed on the side of the gate electrode. The metal film of the high-resistance element is oxidized. A diffused layer of the MIS transistor is formed in the substrate. | 07-15-2010 |
| 20100187612 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region. | 07-29-2010 |
| 20110101468 | Method of manufacturing semiconductor device and semiconductor device - A semiconductor device according to the embodiments comprises a gate insulator formed on a substrate, the gate insulator including a high-dielectric film in whole or part, a reaction film including a first metal on the gate insulator; a metal film including a second metal on the reaction film; and a film including Si formed on the metal film. | 05-05-2011 |
