| Patent application number | Description | Published |
|---|
| 20080245257 | Projectile with a Penetration Capability - A penetration-capable projectile has a casing and a fuze with a fuze housing lower part. An interface area between the casing of the projectile and the fuze housing lower part is formed with a shape and/or strength modification which prevents the fuze housing lower part from being pushed into the casing on impact with a target that is to be penetrated. | 10-09-2008 |
| 20080302906 | Spin-Stabilized Correctible-Trajectory Artillery Shell - A spin-stabilized correctible-trajectory artillery shell has a generator in the rotation-decoupled engagement region between a canard guidance unit and its munition body. The generator can be switched over to avoid load fluctuations between an adjusting motor and a substitute load. In order to avoid an additional heat source in the interior of the guidance unit the substitute load is in the form of an electrical resistance on, at or in canard surfaces behind the afflux flow edges. The canard surfaces are preferably formed on anti-spin canards which are not adjustably mounted. | 12-11-2008 |
| 20090126593 | Safety and Arming Unit for a Fuse - A safety and arming unit for a fuse includes a firing chain having first and second firing devices defining an intermediate space therebetween and a barrier blocking the intermediate space in a safe position. The firing chain is brought into an armed position by a releasing movement vacating the intermediate space. First and second mutually independent securing devices lock the barrier in the safe position and execute an unlocking action based on two mutually independent physical arming parameters. A compact and very reliable safety and arming unit can be achieved in this way. | 05-21-2009 |
| 20090255431 | MINIATURIZED PRIMING CHAIN - A modular miniaturized priming chain has a detonator and a priming booster assembly. The priming booster assembly includes a first priming booster and a second priming booster which can be modularly combined together depending on the respective power requirement at an output of the priming chain, or only the first priming booster is combined with the detonator, which is a miniature detonator. | 10-15-2009 |
| Patent application number | Description | Published |
|---|
| 20090322417 | SEMICONDUCTOR COMPONENT ARRANGEMENT HAVING A COMPONENT WITH A DRIFT ZONE AND A DRIFT CONTROL ZONE - Disclosed is a semiconductor including a component having a drift zone and a drift control zone. A first connection zone is adjacent to the drift zone and is doped more highly than the drift zone. A drift control zone is arranged adjacent to the drift zone and is coupled to the first connection zone. A drift control zone is dielectric arranged between the drift zone and the drift control zone. At least one rectifier element is arranged between the first connection zone and the drift control zone. A charging circuit is connected to the drift control zone. | 12-31-2009 |
| 20100058876 | SEMICONDUCTOR DEVICE INCLUDING A PRESSURE SENSOR - A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella. | 03-11-2010 |
| 20100186511 | ACCELERATION SENSOR - A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate. | 07-29-2010 |
| 20100218613 | SEMICONDUCTOR DEVICE INCLUDING A CAVITY - A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity. | 09-02-2010 |
| 20110068420 | Semiconductor Structure with Lamella Defined by Singulation Trench - A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench. | 03-24-2011 |
| 20110163395 | Pressure Sensor and Method - A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area. | 07-07-2011 |
