| Patent application number | Description | Published |
|---|
| 20080247148 | Semiconductor Device - A semiconductor device | 10-09-2008 |
| 20080251810 | TRENCHED SEMICONDUCTOR DEVICE - An IGBT is disclosed which has a set of inside trenches and an outside trench formed in its semiconductor substrate. The substrate has emitter regions adjacent the trenches, a p-type base region adjacent the emitter regions and trenches, and an n-type base region comprising a first and a second subregion contiguous to each other. The first subregion of the n-type base region is contiguous to the inside trenches whereas the second subregion, less in impurity concentration than the first, is disposed adjacent the outside trench. Breakdown is easier to occur than heretofore adjacent the inside trenches, saving the device from destruction through mitigation of a concentrated current flow adjacent the outside trench. | 10-16-2008 |
| 20090140289 | SEMICONDUCTOR DEVICE - Each of first base regions of sequentially layered first IGBT and second IGBT has a peripheral section in the vicinity of the side face of the semiconductor substrate. Each of the IGBTs includes a P-type peripheral base region that is adjacent to the peripheral section of the first base region of the N-type to form a diode and a diode electrode that is formed on an upper face of the peripheral section of the first base region, thereby electrically connecting the diode electrode and a collector electrode of each of the IGBTs. When the semiconductor device is ON, current flows at the center side of the semiconductor substrate separated from the side face. When current in a reverse direction is generated when the semiconductor device is OFF, current in a reverse direction flows in the vicinity of the side face of the semiconductor substrate. | 06-04-2009 |
| 20090166809 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURE - A reliable semiconductor device is provided which comprises lower and upper IGBTs | 07-02-2009 |
| 20090289278 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a collector layer of a first conductivity type; a semiconductor area of a second conductivity type formed on the collector layer; a base layer of the first conductivity type formed on the semiconductor area; an emitter layer of the second conductivity type formed in an island shape on the base layer; an insulation film formed on the semiconductor area, the base layer and the emitter layer; a gate electrode formed on the insulation film; an emitter electrode formed on the base layer and the emitter layer; a collector electrode formed on the collector layer; and a crystal defect area of the first conductivity type locally formed in the collector layer. A position of a defect concentration peak of the crystal defect area is in the collector layer. An edge of the crystal defect area adjoins the semiconductor area or is located in the semiconductor area. | 11-26-2009 |
| 20100237385 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, a third semiconductor layer on the second semiconductor layer and being in the shape of an island on the second semiconductor layer, a dielectric film on the second and third semiconductor layers, a control electrode on the dielectric film, a first main electrode electrically connected to the second and third semiconductor layers, and a second main electrode electrically connected to the first semiconductor layer and having a Pd layer. | 09-23-2010 |
| 20100264546 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film ( | 10-21-2010 |
| 20110175139 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - An IGBT having a good balance between high switching speed and low on-resistance. | 07-21-2011 |
