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Katsuyuki Sekine
Katsuyuki Sekine, Yokkaichi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110049612 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer, and a control gate electrode formed on the second insulating layer. At least one inelastic scattering film that reduces energy of electrons by scattering is contained in at least one of the charge storage layer and second insulating layer. | 03-03-2011 |
| 20110068312 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device comprises a plurality of first lines, a plurality of second lines, and memory cells. Each of the memory cells comprise a variable resistor, and a diode. The variable resistor includes a first metal oxide film and is configured to reversibly change resistance value by energy application. The diode includes a second metal oxide film and is connected in series to the variable resistor. The first metal oxide film has at least one of dielectric constant lower than that of the second metal oxide film and physical film thickness greater than that of the second metal oxide film. | 03-24-2011 |
| 20110069530 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, there is provided a method of manufacturing a nonvolatile memory device. In this method, a first voltage may be applied to a variable resistive element having a resistance value which is electrically rewritable in a high resistance and in a low resistance. In this method, a second voltage may be applied to the variable resistive element in a case where the resistance value of the variable resistive element to which the first voltage has been applied is greater than a resistance value of the low resistance and is not greater than a resistance value of the high resistance. Further, in this method, the applying of the second voltage to the variable resistive element may be repeated until the resistance value of the variable resistive element to which the second voltage has been applied falls within a range of the resistance value of the low resistance. | 03-24-2011 |
| 20110140068 | RESISTANCE-CHANGE MEMORY CELL ARRAY - According to one embodiment, a resistance-change memory cell array in which a plurality of horizontal electrodes extending horizontally and a plurality of vertical electrodes extending vertically are arranged to configure a cross-point structure includes rectifying insulating films formed in contact with side surfaces of the vertical electrodes in facing regions between the horizontal electrodes and the vertical electrodes, variable resistance films formed in contact with side surfaces of the horizontal electrodes in the facing regions between the horizontal electrodes and the vertical electrodes, and conductive layers formed between the rectifying insulating films and the variable resitstance films. | 06-16-2011 |
| 20110193050 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor memory device comprises a substrate, a lower electrode, a variable resistance film, and an upper electrode. The lower electrode is on the substrate. The variable resistance film is on the lower electrode and stores data. The upper electrode is on the variable resistance film. The variable resistance film comprises a first film, and a second film. The first film is on a side of at least one of the upper electrode and the lower electrode and contains a metal. The second film is between the first film and the other electrode and contains the metal and oxygen. A composition ratio [O]/[Me] of oxygen to the metal in the second film is lower than a stoichiometric ratio and higher than the composition ratio [O]/[Me] in the first film. The composition ratio [0]/[Me] changes between the first film and the second film. | 08-11-2011 |
| 20120012807 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device in an embodiment comprises memory cells, each of the memory cells disposed between a first line and a second line and having a variable resistance element and a switching element connected in series. The variable resistance element includes a variable resistance layer configured to change in resistance value thereof between a low-resistance state and a high-resistance state. The variable resistance layer is configured by a transition metal oxide. A ratio of transition metal and oxygen configuring the transition metal oxide varies between 1:1 and 1:2 along a first direction directed from the first line to the second line. | 01-19-2012 |
Katsuyuki Sekine, Mie-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100288995 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device includes: a lower electrode including a plurality of projections formed on a top surface thereof; an oxide film covering the top surface and made of an oxide of a same metal as a metal contained in the lower electrode; and a resistance variable film provided on the oxide film and being in contact with the oxide film, the projections being buried in the oxide film, and a lower layer portion of the resistance variable film having an oxygen concentration lower than an oxygen concentration of a portion other than the lower layer portion of the resistance variable film. | 11-18-2010 |
| 20100314602 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer | 12-16-2010 |
| 20110068316 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide. | 03-24-2011 |
| 20110175048 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes first and second conductive layers, a resistance change layer, and a rectifying element. The first conductive layer has first and second major surfaces. The second conductive layer has third and fourth major surfaces, a side face, and a corner part. The third major surface faces the first major surface and includes a plane parallel to the first major face and is provided between the fourth and first major surfaces. The corner part is provided between the third major surface and the side face. The corner part has a curvature higher than that of the third major surface. The resistance change layer is provided between the first and second conductive layers. The rectifying element faces the second major surface of the first conductive layer. An area of the third major surface is smaller than that the second major surface. | 07-21-2011 |
| 20110175157 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor layer; first and second insulating layers; a functional layer; first and second gate electrodes. The first insulating layer opposes the semiconductor layer. The second insulating layer is provided between the semiconductor layer and the first insulating layer. The functional layer is provided between the first and second insulating layers. The second gate electrode is separated from the first gate electrode. The first insulating layer is disposed between the first gate electrode and the semiconductor layer and between the second gate electrode and the semiconductor layer. The charge storabilities in first and second regions of the functional layer are different from that of a third region of the functional layer. The first and second regions oppose the first and second gate electrodes, respectively. The third region is between the first and the second regions. | 07-21-2011 |
| 20110176351 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a memory layer and a control unit. The memory layer includes a first conductive layer, a second conductive layer and a resistance change layer. The resistance change layer is provided between the first and second conductive layers and transits between a high resistance state and a low resistance state by at least one of an applied electric field and an applied current. The control unit is electrically connected to the first and second conductive layers and configured to apply a first signal with a first polarity between the first and second conductive layers prior to applying a second signal with a second polarity different from the first polarity between the first and second conductive layers to cause the resistance change layer to transit from the high resistance state to the low resistance state. | 07-21-2011 |
Katsuyuki Sekine, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100059811 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - In a nonvolatile semiconductor memory device, a stacked body is provided on a silicon substrate by alternately stacking pluralities of isolation dielectric films and electrode films, a through-hole is formed in the stacked body to extend in the stacking direction, a memory film is formed by stacking a block layer, a charge layer and a tunnel layer in this order at an inner face of the through-hole, and thereby a silicon pillar is buried in the through-hole. At this time, the electrode film is protruded further than the isolation dielectric film toward the silicon pillar at the inner face of the through-hole, and an end face of the isolation dielectric film has a curved shape displacing toward the silicon pillar side as the electrode film is approached. | 03-11-2010 |
| 20100140682 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a nonvolatile semiconductor memory device, a tunnel insulating layer, a charge storage layer and a charge block layer are formed on a silicon substrate in this order, and a plurality of control gate electrodes are provided above the charge block layer. Moreover, a cap layer made of silicon nitride is formed between the charge block layer and each of the control gate electrode, the cap layer being divided for each gate control electrode. | 06-10-2010 |
| 20100213534 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD FOR THE SAME - In a nonvolatile semiconductor memory device provided with memory cell transistors, each of the memory cell transistors has a tunnel insulating film, a floating gate electrode, an inter-electrode insulating film, and element isolation insulating films respectively. The floating gate electrode on the tunnel insulating film is provided with a first floating gate electrode and a second floating gate electrode formed sequentially from the bottom, the second floating gate electrode being narrower in a channel-width direction than the first one. Levels of upper surfaces of the element isolation insulating films and the first floating gate electrode are the same. The inter-electrode insulating film continuously covers the upper and side surfaces of the floating gate electrode and the upper surfaces of the element isolation insulating films, and is higher in a nitrogen concentration in a boundary portion to the floating gate electrode than in boundary portions to the element isolation insulating films. | 08-26-2010 |
Katsuyuki Sekine, Yokoham-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100136780 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon. | 06-03-2010 |
Katsuyuki Sekine, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100003813 | Semiconductor device and method of fabricating the same - According to the present invention, there is provided a semiconductor device comprising: | 01-07-2010 |
Katsuyuki Sekine, Sendai-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080224145 | Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof - A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr. | 09-18-2008 |
Katsuyuki Sekine, Mie JP
| Patent application number | Description | Published |
|---|---|---|
| 20120068144 | RESISTANCE RANDOM ACCESS MEMORY - According to one embodiment, there are provided a first electrode, a second electrode, first and second variable-resistance layers that are arranged between the first electrode and the second electrode, and at least one non variable-resistance layer that is arranged so that positions of the first and second variable-resistance layers between the first electrode and the second electrode are symmetrical to each other. | 03-22-2012 |