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Katsuyama, Yokohama-Shi

Goro Katsuyama, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090009829Image reading system and program for reading electronic paper, and image forming apparatus including the image reading system - An image reading system includable in an image forming apparatus includes a document feed tray to contain original documents including either or both of a non-electronic recording medium and an electronic paper that includes a memory and a first communication element, a primary sensor to read the electronic data from the memory of each electronic paper before transfer of the original documents starts, a secondary sensor to sequentially detect the original documents during the transfer thereof and determine a media type of each original document, a transfer unit to transfer the non-electronic recording medium to a scanning position, a transfer controller to control the transfer unit based on the determination result of the secondary sensor, and an optical image reader to optically read an image formed on each non-electronic recording medium at the scanning position.01-08-2009
20090123192METHOD AND TONER BOTTLE FOR IMAGE FORMING APPARATUS CAPABLE OF EFFECTIVELY SUPPLYING TONER TO IMAGE FORMING APPARATUS - The toner bottle exchangeably used in an image forming apparatus. The toner bottle includes a bottle body having a substantially cylindrical shape and configured to contain toner, a gear configured to rotate a part of the toner bottle, a cap attached to the bottle body and including an opening arranged in a circumferential surface of the cap and configured to output toner to a development apparatus of the image forming apparatus, a toner conveyance mechanism arranged in the bottle body and configured to convey the toner to the opening.05-14-2009
20090180817METHOD AND TONER BOTTLE FOR IMAGE FORMING APPARATUS CAPABLE OF EFFECTIVELY SUPPLYING TONER TO IMAGE FORMING APPARATUS - The toner bottle exchangeably used in an image forming apparatus. The toner bottle includes a bottle body having a substantially cylindrical shape and configured to contain toner, a gear configured to rotate a part of the toner bottle, a cap attached to the bottle body and including an opening arranged in a circumferential surface of the cap and configured to output toner to a development apparatus of the image forming apparatus, a toner conveyance mechanism arranged in the bottle body and configured to convey the toner to the opening.07-16-2009
20100254732METHOD AND TONER BOTTLE FOR IMAGE FORMING APPARATUS CAPABLE OF EFFECTIVELY SUPPLYING TONER TO IMAGE FORMING APPARATUS - The toner bottle exchangeably used in an image forming apparatus. The toner bottle includes a bottle body having a substantially cylindrical shape and configured to contain toner, a gear configured to rotate a part of the toner bottle, a cap attached to the bottle body and including an opening arranged in a circumferential surface of the cap and configured to output toner to a development apparatus of the image forming apparatus, a toner conveyance mechanism arranged in the bottle body and configured to convey the toner to the opening.10-07-2010

Patent applications by Goro Katsuyama, Yokohama-Shi JP

Shinnosuke Katsuyama, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100166204Headphone set - A headphone set is equipped with left- and right-ear headphone units. Each unit includes a housing body having a first plane section and a second plane section that faces the first section, the sections being almost perpendicular to a cross section of a cavum conchae of a user's ear when the housing body is fit in the cavum conchae, a speaker and a microphone aligned between the sections, the speaker being located at the first section side, the microphone being located at the second section side. A sound output section is provided at the first section, to give off sounds output by the speaker to an outer space of the housing body. A sound pick-up hole is provided at the second section, through which the outer space communicates with an inner space of the housing body created between a sound pick-up section of the microphone and the second section.07-01-2010

Tomokazu Katsuyama, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090001408Method for forming a semiconductor light-emitting device and a semiconductor light-emitting device - A semiconductor light-emitting device with a new layer structure is disclosed, where the current leaking path is not caused to enhance the current injection efficiency within the active layer. The device provides a mesa structure containing active layer and a p-type lower cladding layer on a p-type substrate and a burying layer doped with iron (Fe) to bury the mesa structure, where the burying layer shows a semi-insulating characteristic. The device also provides an n-type blocking layer arranged so as to cover at least a portion of the p-type buffer lower within the mesa structure. The n-type blocking layer prevents the current leaking from the burying layer to the p-type buffer layer, and the semi-insulating burying layer that covers the rest portion of the mesa structure not covered by the n-type blocking layer prevents the current leaking from the n-type blocking layer to the n-type cladding layer within the mesa structure.01-01-2009
20090117676Semiconductor optical device - A method of fabricating a semiconductor optical device is disclosed. This semiconductor optical device includes first and second optical semiconductor elements. This method comprises the steps of: growing, in a metal-organic vapor phase deposition reactor, plural semiconductor layers for the first semiconductor optical element on a primary surface of a substrate which has first and second areas for the first semiconductor optical element and the second optical semiconductor element, respectively; forming an insulating mask on the plural semiconductor layers and the first area; etching the plural semiconductor layers by use of the insulating mask to form a semiconductor portion having an end face; growing a layer of a first semiconductor on the second area and deposit of the first semiconductor on the end face in the reactor by use of the insulating mask; supplying etchant for etching the first semiconductor to remove at least a part of the deposit of the first semiconductor on the end face by use of the insulating mask; and after removing the deposit of the first semiconductor, growing a layer of a second semiconductor for the second optical element on the second area in the reactor by use of the insulating mask.05-07-2009
20090203159METHOD OF PRODUCING SEMICONDUCTOR OPTICAL DEVICE - The invention discloses a method of producing on a substrate a semiconductor optical device having a laser diode and an EA optical modulator. An etched side face of a first semiconductor portion is formed. Then, for example, a first optical confinement layer and an active layer both for the EA optical modulator are grown by the metal organic vapor phase epitaxy method. The first optical confinement layer is grown by supplying hydrogen chloride in addition to a material gas. When the first optical confinement layer is grown, the formation of a thick semiconductor layer along the etched side face, which is an abnormally grown semiconductor layer, is decreased. Subsequently, the active layer for the EA optical modulator is grown. This method can suppress the active layer for the EA optical modulator from bending caused by the abnormally grown semiconductor layer.08-13-2009
20100190283METHOD TO FORM SEMICONDUCTOR LASER DIODE WITH MESA STRUCTURE BURIED BY CURRENT BLOCKING LAYER - A method to form a an LD with the buried mesa type is disclosed, in which the n-type current blocking layer is stably kept with a distance to the active layer in the buried mesa. The method of the invention includes a step to form the mesa by iterating the RIE and the ashing to obtain in a mesa side a steep edge with the (110) surface. A wet-etching process subsequent to the iterative etching and ashing removes residuals left on the mesa side. Then, the growth of the current blocking layer shows two modes of the horizontal growth of the (110) surface and the vertical growth of the (001) surface comparably.07-29-2010
20110159620METHOD TO FORM SEMICONDUCTOR LASER DIODE - The process of the present invention to form a mask made of inorganic material containing silicon reduces the plasma damage induced in the semiconductor layers due to the plasma-ashing. The semiconductor material is heat-treated at a high temperature after the growth thereof to form an oxide layer positively in the surface of the semiconductor material before it is covered by the silicon inorganic film. This inorganic film is dry-etched by an etchant containing fluorine to get a mask for forming a mesa and for growing burying layer selectively.06-30-2011

Patent applications by Tomokazu Katsuyama, Yokohama-Shi JP

Tsukuru Katsuyama, Yokohama-Shi JP

Patent application numberDescriptionPublished
20080240195Semiconductor optical device - In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. The first distributed Bragg reflector portion includes first distributed Bragg reflector layers and second distributed Bragg reflector layers which are arranged alternately. The second distributed Bragg reflector portion includes third distributed Bragg reflector layers and fourth distributed Bragg reflector layers which are arranged alternately. The first conductive type semiconductor region, the active layer and the second conductive type semiconductor region are provided between the first distributed Bragg reflector portion and the second distributed Bragg reflector layers.10-02-2008

Patent applications by Tsukuru Katsuyama, Yokohama-Shi JP