| Patent application number | Description | Published |
|---|
| 20080199806 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half. | 08-21-2008 |
| 20080268370 | Positive resist compositions and patterning process - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution, and forms a pattern with a minimal line edge roughness. | 10-30-2008 |
| 20080311514 | SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING - In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion. | 12-18-2008 |
| 20090053651 | PATTERNING PROCESS - A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half. | 02-26-2009 |
| 20090208886 | DOUBLE PATTERNING PROCESS - Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer. | 08-20-2009 |
| 20090253084 | DOUBLE PATTERNING PROCESS - Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer. | 10-08-2009 |
| 20100062380 | DOUBLE PATTERNING PROCESS - A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R | 03-11-2010 |
| 20100129738 | POSITIVE RESIST COMPOSITION AND PATTERING PROCESS - A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). | 05-27-2010 |
