| Patent application number | Description | Published |
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| 20080210959 | Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface. | 09-04-2008 |
| 20080283851 | GaN Substrate, and Epitaxial Substrate and Semiconductor Light-Emitting Device Employing the Substrate - GaN substrate ( | 11-20-2008 |
| 20080296610 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATION OF THE SAME - For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected to the defect aggregation portion on the rear face. The defect aggregation portion of this semiconductor laser has numerous crystal defects, and so the carrier concentration is high, and the electrical resistivity is lowered significantly. For this reason, in a semiconductor laser of this invention in which an electrode is formed on this defect aggregation portion, an Ohmic contact can easily be obtained between the GaN single-crystal substrate and the electrode, and by this means a lowered driving voltage is realized. | 12-04-2008 |
| 20080299694 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - In a semiconductor laser manufacturing method, a GaN single-crystal substrate is formed by slicing a GaN bulk crystal, grown on a c-plane, parallel to an a-plane which is perpendicular to the c-plane. In this substrate, crystal defects extending parallel to the c-axis direction do not readily exert an influence, and degradation of element characteristics due to crystal defects can be suppressed. Further, because the a-plane is a nonpolar plane, improved light emission efficiency and longer wavelengths can be achieved compared with the c-plane, which is a polar plane. Hence a semiconductor laser manufacturing method of this invention enables further improvement of the element characteristics of the semiconductor laser to be fabricated. | 12-04-2008 |
| 20080308815 | GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method - Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions. | 12-18-2008 |
| 20080308906 | GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE - A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface. | 12-18-2008 |
| 20090212277 | GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING GROUP-III NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of In | 08-27-2009 |
| 20100008393 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND EPITAXIAL WAFER - The group II nitride semiconductor light-emitting device includes: a gallium nitride based semiconductor region of n-type; a p-type gallium nitride based semiconductor region; a hole-blocking layer; and an active layer. The gallium nitride based semiconductor region of n-type has a primary surface, and the primary surface extends on a predetermined plane. The c-axis of the gallium nitride based semiconductor region tilts from a normal line of the predetermined plane. The hole-blocking layer comprises a first gallium nitride based semiconductor. The band gap of the hole-blocking layer is greater than the band gap of the gallium nitride based semiconductor region, and the thickness of the hole-blocking layer is less than the thickness of the gallium nitride based semiconductor region. The active layer comprises a gallium nitride semiconductor. The active layer is provided between the p-type gallium nitride based semiconductor region and the hole-blocking layer. The hole-blocking layer and the active layer is provided between the primary surface of the gallium nitride based semiconductor region and the p-type gallium nitride based semiconductor region. The band gap of the hole-blocking layer is greater than a maximum band gap of the active layer. | 01-14-2010 |
| 20100009484 | METHOD OF FABRICATING QUANTUM WELL STRUCTURE - In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer. | 01-14-2010 |
| 20100032644 | Nitride Semiconductor Light-Emitting Device and Nitride Semiconductor Light-Emitting Device Fabrication Method - An active layer ( | 02-11-2010 |
| 20100055820 | METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL WAFER | 03-04-2010 |
| 20100059759 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FORMING THE SAME - An active layer | 03-11-2010 |
| 20100189148 | GROUP III NITRIDE SEMICONDUCTOR LASER - A group III nitride semiconductor laser is provided that has a good optical confinement property and includes an InGaN well layer having good crystal quality. | 07-29-2010 |
| 20100190284 | METHOD OF FABRICATING NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE - In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium source to a reactor. The barrier layer comprises a first gallium nitride-based semiconductor. After the growth of the barrier layer, a nitrogen material and an indium material are supplied to the reactor without supply of the gallium source to perform a preflow of indium. Immediately after the preflow, a well layer is grown on the barrier layer at a second temperature while supplying an indium source and the gallium source to the reactor. The well layer comprises InGaN, and the second temperature is lower than the first temperature. The gallium source and the indium source are supplied to the reactor during plural first periods of the step of growing the well layer to grow plural InGaN layers, respectively. The indium material is supplied to the reactor without supply of the gallium source during the second period of the step of growing the well layer. The second period is between the first periods. The well layer comprises the plural InGaN layers. | 07-29-2010 |
| 20100210089 | SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost. | 08-19-2010 |
| 20100213439 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 08-26-2010 |
| 20100220761 | GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, METHOD OF FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, AND EPITAXIAL WAFER - A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device | 09-02-2010 |
| 20100230690 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device | 09-16-2010 |
| 20100276663 | GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM - In a GaN based semiconductor optical device | 11-04-2010 |
| 20100297784 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 11-25-2010 |
| 20100322276 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 12-23-2010 |
| 20110013656 | GROUP III NITRIDE SEMICONDUCTOR LASER DIODE - A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a second conductivity type, and comprises aluminum-containing group III nitride. The second cladding layer is provided on the active layer. An optical guiding layer is provided between the first cladding layer and the active layer and/or between the second cladding layer and the active layer. The optical guiding layer comprises a first layer comprising In | 01-20-2011 |
| 20110013657 | GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DIODE - Provided is a III-nitride semiconductor laser diode capable of lasing to emit light of not less than 500 nm with use of a semipolar plane. Since an active layer | 01-20-2011 |
| 20110042644 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 02-24-2011 |
| 20110049573 | GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of Al | 03-03-2011 |
| 20110057167 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 03-10-2011 |
| 20110057200 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device | 03-10-2011 |
| 20110058585 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. | 03-10-2011 |
| 20110076788 | METHOD OF MAKING SEMICONDUCTOR LIGHT- EMITTING DEVICE - A method of making a semiconductor light-emitting device involves the steps of selecting at least one tilt angle for a primary surface of a substrate to evaluate the direction of piezoelectric polarization in a light-emitting layer, the substrate comprising a group III nitride semiconductor; preparing a substrate having the primary surface, the primary surface having the selected tilt angle, and the primary surface comprising the group III nitride semiconductor; forming a quantum well structure and p- and n-type gallium nitride semiconductor layers for the light-emitting layer at the selected tilt angle to prepare a substrate product; measuring photoluminescence of the substrate product while applying a bias to the substrate product, to determine bias dependence of the photoluminescence; evaluating the direction of the piezoelectric polarization in the light-emitting layer at the selected tilt angle on the primary surface of the substrate by the determined bias dependence; determining which of the primary surface or the back surface of the substrate is to be used, based on the evaluation to select a plane orientation of a growth substrate for making the semiconductor light-emitting device; and forming a semiconductor laminate for the semiconductor light-emitting device on the primary surface of the growth substrate. The tilt angle is defined by the primary surface of the substrate and the (0001) plane of the group III nitride semiconductor. Each of the well layer and the barrier layer of the light-emitting layer extends along a reference plane tilting from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor. | 03-31-2011 |
| 20110101306 | PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array | 05-05-2011 |
| 20110114916 | III-NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL SUBSTRATE - A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×10 | 05-19-2011 |
| 20110121265 | GROUP III NITRIDE SEMICONDUCTOR OPTICAL DEVICE - A group III nitride semiconductor optical device | 05-26-2011 |
| 20110124142 | GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM - In a GaN based semiconductor optical device | 05-26-2011 |
| 20110164637 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 07-07-2011 |
