Patent application number | Description | Published |
20080197349 | Manufacturing method of thin-film transistor, thin film transistor sheet, and electric circuit - A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material. | 08-21-2008 |
20080230774 | ORGANIC THIN-FILM TRANSISTOR MANUFACTURING METHOD, ORGANIC THIN-FILM TRANSISTOR, AND ORGANIC THIN-FILM TRANSISTOR SHEET - An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer. | 09-25-2008 |
20080251784 | Organic Semiconductor Material, Organic Transistor, Field Effect Transistor, Switching Device and Thiazole Compound - An organic semiconductor material comprising a compound having a substructure represented by Formula (10): | 10-16-2008 |
20090111210 | Method for Organic Semiconductor Material Thin-Film Formation and Process for Producing Organic Thin Film Transistor - A method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film. The method for organic semiconductor material thin film formation is characterized in that, when the surface free energy of the surface of the substrate is γ | 04-30-2009 |
20090114908 | ORGANIC SEMICONDUCTOR THIN FILM, ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR - Disclosed is an organic semiconductor thin film having excellent coating property and high carrier mobility. Also disclosed are an organic thin film transistor using such an organic semiconductor thin film, and a method for manufacturing such an organic thin film transistor. Specifically disclosed is an organic semiconductor thin film formed on a substrate subjected to a surface treatment. This organic semiconductor thin film is characterized in that a surface treating agent used in the surface treatment has a terminal structure represented by a specific general formula. | 05-07-2009 |
20090159880 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an electronic device comprising the subsequent steps of: providing a thermal conversion material or an area comprising the thermal conversion material and, in an adjoining area or in a vicinity of the thermal conversion material or the area comprising the thermal conversion material, a material having an electromagnetic wave absorbing function or an area comprising the material having the electromagnetic wave absorbing function, in at least a portion on a substrate; and irradiating the substrate with an electromagnetic wave to transform the thermal conversion material into a functional material using a heat generated by the material having the electromagnetic wave absorbing function. | 06-25-2009 |
20090173938 | METAL OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THEREOF - A method of manufacturing a metal oxide semiconductor comprising the step of: conducting a transformation treatment on a semiconductor precursor layer containing a metal salt to form the metal oxide semiconductor, wherein the metal salt comprises one or more metal salts selected from the group consisting of a nitrate, a sulfate, a phosphate, a carbonate, an acetate and an oxalate of a metal; and the semiconductor precursor layer is formed by coating a solution of the metal salt. | 07-09-2009 |
20090256142 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - Disclosed are an organic thin film transistor exhibiting a high switching current value even when a distance (channel length) between source and the drain electrodes is large, and a manufacturing method thereof. The organic thin film transistor of the invention comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, a drain electrode and at least one different type electrodes characterized in that the different type electrode is formed in a channel region between the source electrode and the drain electrode on the organic semiconductor layer. | 10-15-2009 |
20100019319 | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit - A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material. | 01-28-2010 |
20100072435 | PRODUCTION METHOD OF METAL OXIDE PRECURSOR LAYER, PRODUCTION METHOD OF METAL OXIDE LAYER, AND ELECTRONIC DEVICE - A production method of a metal oxide precursor layer provided with a substrate, a solution containing a metal ion as a metal oxide precursor, and a process to coat the solution while the temperature of the substrate is adjusted in the temperature range of 50%-150% of the boiling point (° C.) of a main solvent of the solution. | 03-25-2010 |
20100090199 | Organic Semiconductor Film Forming Method, Organic Semiconductor Film and Organic Thin Film Transistor - A method for forming an organic semiconductor film having a high carrier mobility is provided by having an average volatilization rate of a solvent within a prescribed range during a step of drying, at the time of applying a coating solution, which includes an organic semiconductor material and a non-halogen solvent, on a substrate. In such forming method, characteristic fluctuation in repeated use of the organic semiconductor film is suppressed, and an organic thin film transistor having an excellent film forming characteristic even on an insulator with reduced gate voltage threshold can be obtained. | 04-15-2010 |
20100105161 | Method for Manufacturing Thin Film Transistor - Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern. | 04-29-2010 |
20100178727 | METHOD OF MANUFACTURING ORGANIC FILM TRANSISTOR - A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point. | 07-15-2010 |
20100184253 | PROCESS FOR MANUFACTURING THIN FILM TRANSISTOR - Disclosed is a process for manufacturing a thin film transistor, the process comprising the steps of providing an oxide semiconductor precursor solution for an oxide semiconductor layer in which an oxide semiconductor precursor is dissolved in a solvent, coating the oxide semiconductor precursor solution on a substrate to form an oxide semiconductor precursor layer, patterning the oxide semiconductor precursor layer so that the oxide semiconductor precursor layer remains at portions where the oxide semiconductor layer is to be formed, and heating the remaining oxide semiconductor precursor layer to form the oxide semiconductor layer. | 07-22-2010 |
20110220895 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR - The present invention makes it possible to prepare a thin film transistor fitted with a resin substrate by lowering a process temperature during formation of an oxide semiconductor, and further makes it possible to improve manufacturing efficiency and reduce variations in thin film transistor performance. Disclosed is a thin film transistor of the present invention possessing a semiconductor containing metal oxide, the semiconductor comprising a coating film made from a solution or a dispersion of a precursor, wherein the metal oxide contains indium as a first metal element, gallium or aluminum as a second metal element, and zinc or tin as a third metal element, and a ratio of the third metal element to total metal elements in the metal oxide is 25 at % or less, or 0 at %. | 09-15-2011 |