Patent application number | Description | Published |
20080197361 | INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An insulated gate silicon carbide semiconductor device is provided having small on-resistance in a structure obtained by combining the SIT and MOSFET structures having normally-off operation. The device includes an n | 08-21-2008 |
20090046489 | Insulated transformers, and power converting device - An insulated transformer, which can suppress aging deterioration and can reduce the influence of noise caused by external magnetic flux, while improving reliability and environmental resistance, and can send and receive signals while electrically insulating a low-voltage side and a high-voltage side. A secondary coil is formed on a semiconductor substrate, and a primary coil is formed on one face of a glass substrate. The primary coil fixes the glass substrate formed on one face onto the semiconductor substrate through the other face of the glass substrate by an adhesive layer. | 02-19-2009 |
20090085117 | LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE THEREOF - A level shift circuit and a semiconductor device are configured to prevent failure and malfunction even when an excessive negative voltage or ESD surge are applied to a high-voltage power supply terminal. The level shift circuit includes a level shift resistor, a current-limiting resistor connected in series to the level shift resistor, and an n-channel MOSFET, with its drain connected to the current-limiting resistor. An output of the level-up circuit is obtained from the positioned between the level shift resistor and the current-limiting resistor. By providing the current-limiting resistor, the current that flows due to an excessive negative voltage or ESD surge is suppressed to prevent the level shift circuit from failing or malfunctioning. | 04-02-2009 |
20090114946 | SEMICONDUCTOR DEVICE HAVING A CONTROL CIRCUIT AND METHOD OF ITS MANUFACTURE - A semiconductor has an IGBT active section and a control circuit section for detecting an IGBT abnormal state. A collector region is formed on the back surface side (i.e., on the IGBT collector side) in a selective manner, namely right under the IGBT active section. | 05-07-2009 |
20090280646 | MANUFACTURING METHOD FOR MICRO-TRANSFORMERS - A micro-transformer manufacturing method is provided, which can improve throughput, prevent a crack from entering an insulating film between coils, and manufacture the micro-transformer without using a mask material having a high selection ratio. An insulating film is deposited on the whole face of a semiconductor substrate having an impurity-diffused region. This insulating film is partially removed to form a first opening and a second opening. A primary coil is formed such that a center pad contacts the impurity-diffused region through the first opening. A thin insulating film is deposited on the primary coil. An insulator material having a secondary coil formed thereon is adhered onto the insulating film on the primary coil by adhesive tape. The insulator material is sized to not cover both a pad, connected with the center pad of the primary coil through the impurity-diffused region, and an outer-end pad of the primary coil. | 11-12-2009 |
20100059028 | SEMICONDUCTOR DEVICE AND INTERNAL COMBUSTION ENGINE IGNITION DEVICE - A semiconductor device includes an IGBT, a constant voltage circuit, and protection Zener diodes. The IGBT makes/breaks a low-voltage current flowing in a primary coil. The constant voltage circuit and the protection Zener diodes are provided between an external gate terminal and an external collector terminal. The constant voltage circuit supplies a constant gate voltage to the IGBT to thereby set a saturation current value of the IGBT to a predetermined limiting current value. The IGBT has the saturation current value in a limiting current value range of the semiconductor device. | 03-11-2010 |
20100109015 | GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - An insulating layer, an undoped first GaN layer and an AlGaN layer are laminated in this order on a surface of a semiconductor substrate. A surface barrier layer formed by a two-dimensional electron gas is provided in an interface between the first GaN layer and the AlGaN layer. A recess (first recess) which reaches the first GaN layer but does not pierce the first GaN layer is formed in a surface layer of the AlGaN layer. A first high withstand voltage transistor and a control circuit are formed integrally on the aforementioned semiconductor substrate. The first high withstand voltage transistor is formed in the first recess and on a surface of the AlGaN layer. The control circuit includes an n-channel MOSFET formed in part of the first recess, and a depression type n-channel MOSFET formed on a surface of the AlGaN layer. In this manner, there are provided a gallium nitride semiconductor device which can be used under a high temperature environment while reduction in total circuit size can be attained, and a method for producing the gallium nitride semiconductor device. | 05-06-2010 |
20100270586 | WIDE BAND GAP SEMICONDUCTOR DEVICE - A semiconductor device having high reliability and high load short circuit withstand capability while maintaining a low ON resistance is provided, by using a WBG semiconductor as a switching element of an inverter circuit. In the semiconductor device for application to a switching element of an inverter circuit, a band gap of a semiconductor material is wider than that of silicon, a circuit that limits a current when a main transistor is short circuited is provided, and the main transistor that mainly serves to pass a current, a sensing transistor that is connected in parallel to the main transistor and detects a microcurrent proportional to a current flowing in the main transistor, and a lateral MOSFET that controls a gate of the main transistor on the basis of an output of the sensing transistor are formed on the same semiconductor. | 10-28-2010 |
20100285647 | INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An insulated gate silicon carbide semiconductor device is provided having small on-resistance in a structure obtained by combining the SIT and MOSFET structures having normally-off operation. The device includes an n | 11-11-2010 |
20110133246 | INTERNAL COMBUSTION ENGINE IGNITER SEMICONDUCTOR DEVICE - An internal combustion engine igniter semiconductor device is disclosed which is low cost yet secures energy withstand and reverse surge withstand capability. An IGBT includes a clamping diode between a collector electrode and a gate electrode. The IGBT has two n-type buffer layers of differing impurity concentrations between a p | 06-09-2011 |
20140345583 | SEMICONDUCTOR DEVICE AND INTERNAL COMBUSTION ENGINE IGNITION DEVICE - A semiconductor device includes an IGBT, a constant voltage circuit, and protection Zener diodes. The IGBT makes/breaks a low-voltage current flowing in a primary coil. The constant voltage circuit and the protection Zener diodes are provided between an external gate terminal and an external collector terminal. The constant voltage circuit supplies a constant gate voltage to the IGBT to thereby set a saturation current value of the IGBT to a predetermined limiting current value. The IGBT has the saturation current value in a limiting current value range of the semiconductor device. | 11-27-2014 |