Patent application number | Description | Published |
20130042802 | METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL - The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated. | 02-21-2013 |
20130059429 | METHOD OF PRODUCTION OF SIC SEMICONDUCTOR DEVICE - A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate. | 03-07-2013 |
20130220212 | METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL - A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus ( | 08-29-2013 |
20140127466 | SIC SINGLE CRYSTAL AND METHOD OF PRODUCING SAME - A SiC single crystal having high crystallinity and a large diameter is provided. | 05-08-2014 |
20150064882 | PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate. | 03-05-2015 |
20150136016 | METHOD FOR PRODUCING SiC SINGLE CRYSTAL - Provided is a method for producing a SiC single crystal wherein generation of polycrystals can be inhibited even if the temperature of the Si—C solution is changed after seed touching. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, comprising the steps of: (A) bringing the temperature of the solution to a first temperature, (B) contacting the substrate held on the holding shaft with the solution, (C) bringing the temperature of the solution to a second temperature after the contacting the substrate with the solution, and (D) moving the substrate held on the holding shaft in the vertical direction according to the change in liquid surface height of the solution when the temperature of the solution is brought from the first temperature to the second temperature. | 05-21-2015 |
20160090664 | METHOD FOR PRODUCING SIC SINGLE CRYSTAL - A method for producing a SiC single crystal by a solution process, comprising contacting a seed crystal substrate held on a seed crystal holding shaft with a Si—C solution to conduct crystal growth of a SiC single crystal, the Si—C solution being housed in a crucible and having a temperature gradient in which the temperature decreases from the interior toward the surface,
| 03-31-2016 |
20160122901 | METHOD FOR PRODUCING SIC SINGLE CRYSTAL - A method for producing a SiC single crystal, comprising using a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface to grow a SiC single crystal from a seed crystal substrate, wherein the Si—C solution includes Si and Cr, the boron density difference Bs−Bg between the boron density Bs in the seed crystal substrate and the boron density Bg in the growing single crystal is 1×10 | 05-05-2016 |