Patent application number | Description | Published |
20120218808 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm. | 08-30-2012 |
20120314479 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | 12-13-2012 |
20130001496 | MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side. | 01-03-2013 |
20130001497 | MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer. | 01-03-2013 |
20140009644 | SERVER, CLIENT TERMINAL, AND PROGRAM - There is provided a server including a reception section which receives, from a client terminal, present position information showing a position of the client terminal, and direction information showing an orientation of the client terminal, a retrieval section which retrieves sensory data to which detection position information is added corresponding to a position in a vicinity of an axial line extending in a direction shown by the direction information from the position of the client terminal, and a transmission section which transmits the sensory data retrieved by the retrieval section to the client terminal. | 01-09-2014 |
20140012095 | STORAGE CONTROL APPARATUS, STORAGE CONTROL SYSTEM, AND STORAGE MEDIUM - There is provided a storage control apparatus including a detection section which detects a body sound inside a body cavity, and outputs the body sound as an audio signal, and a storage control section which performs control in a manner that the audio signal output from the detection section is stored. | 01-09-2014 |
20140037262 | DATA STORAGE DEVICE AND STORAGE MEDIUM - There is provided a data storage device that conducts at least one of audio recording and video recording, the data storage device including a trigger signal transmitter that transmits a given trigger signal to an external device, a storage controller that applies control to conduct the at least one of audio recording and video recording, and a marking unit that marks stored data acquired by the at least one of audio recording and video recording at a time of transmitting the trigger signal. | 02-06-2014 |
20140046505 | MOBILE OBJECT, SYSTEM, AND STORAGE MEDIUM - There is provided a mobile object including an input detection unit configured to detect an input from an outside, an acquisition unit configured to acquire environmental information detected by a sensor in a remote location, in accordance with a content of detection performed by the input detection unit, and a control unit configured to control an actuator other than a driving actuator in accordance with the environmental information acquired by the acquisition unit, the driving actuator relating to movement of the mobile object. | 02-13-2014 |
20140066808 | SIGNAL PROCESSING SYSTEM, SIGNAL PROCESSING APPARATUS, AND STORAGE MEDIUM - There is provided a signal processing system including a first detection section which detects, from outside a body cavity, first audio signals of a prescribed part inside the body cavity, a second detection section which detects, from inside the body cavity, second audio signals of the prescribed part inside the body cavity, and a generation section which generates third audio signals based on the first audio signals and the second audio signals. | 03-06-2014 |
20140078242 | INFORMATION PROCESSING SYSTEM AND STORAGE MEDIUM - There is provided an information processing system including an identifying unit that identifies a user and a target with whom the user requests to converse based on a signal detected by a first sensor arranged around the user, a signal processing unit that performs predetermined signal processing on signals detected by the first sensor and a second sensor arranged around the target, an output control unit that causes the signal detected by at least the second sensor and processed by the signal processing unit to be output to a first output unit arranged around the user, and a recognizing unit that recognizes, when a plurality of the targets are identified by the identifying unit, a selection request for selecting a specific target from among the plurality of targets based on the signal detected by the first sensor. | 03-20-2014 |
20140084235 | MEMORY COMPONENT AND MEMORY DEVICE - A memory component having a first electrode; a second electrode; and a memory layer between the first and second electrodes. The memory layer includes (a) on a first electrode side thereof, a high resistance layer that is composed of a plurality of layers, at least one of the plurality of layers including tellurium (Te) as the chief component among anion components, and (b) on a second electrode side thereof, an ion source layer with at least one kind of metal element and at least one kind of chalcogen element selected from the group consisting of tellurium (Te), sulfur (S) and selenium (Se). The memory component is configured to change a resistance of the high resistance layer in accordance with a voltage or current pulse stress applied between the first and second electrodes. | 03-27-2014 |
20140240336 | SIGNAL PROCESSING APPARATUS AND STORAGE MEDIUM - There is provided a signal processing apparatus including a setting unit configured to set a perceptual property parameter for changing perceptual data to desired perceptual data, and a conversion unit configured to convert currently acquired perceptual data to the desired perceptual data in real time in accordance with the perceptual property parameter that has been set by the setting unit. | 08-28-2014 |
20140368671 | IMAGE PROCESSING DEVICE, SERVER, AND STORAGE MEDIUM - There is provided an image processing device including an extraction nit configured to extract an object from an image picked up by use of a certain imaging parameter, a ranging unit configured to acquire distance information indicating a distance between an image pickup unit that has picked up the image and the object that has been imaged, a communication unit having a first transmission function, a second transmission function, and a reception function, and a composition unit configured to combine the object candidate image received by the communication unit in a region of the object included in the second image. | 12-18-2014 |
20140376301 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | 12-25-2014 |
20150032330 | MOBILE OBJECT, SYSTEM, AND STORAGE MEDIUM - There is provided a mobile object including an input detection unit configured to detect an input from an outside, an acquisition unit configured to acquire environmental information detected by a sensor in a remote location, in accordance with a content of detection performed by the input detection unit, and a control unit configured to control an actuator other than a driving actuator in accordance with the environmental information acquired by the acquisition unit, the driving actuator relating to movement of the mobile object. | 01-29-2015 |
20150072499 | MEMORY ELEMENT WITH ION SOURCE LAYER AND MEMORY DEVICE - A method of making memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer. | 03-12-2015 |