Patent application number | Description | Published |
20080254224 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A part of the opening of the nozzle insertion hole located in the liquid discharging direction relative to the nozzle inserted in the nozzle insertion hole is enlarged in the liquid discharging direction. Therefore, the droplets which have migrated to the nozzle insertion hole adheres to the internal surface in the liquid discharging direction relative to the nozzle, that is, to the slanted part via the enlarged part. Moreover, the slanted part is provided slanted from the central portion of the nozzle insertion hole toward the enlarged part and separated away from the central portion of the substrate top surface. Hence, the adhering droplets flow in the liquid discharging direction along the slanted part to be discharged from the opening of the nozzle insertion hole. | 10-16-2008 |
20090032067 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t | 02-05-2009 |
20090107400 | SUBSTRATE PROCESSING APPARATUS AND A SUBSTRATE PROCESSING METHOD - A gas injection head | 04-30-2009 |
20100313915 | SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS - The substrate cleaning method of and the substrate cleaning apparatus for removing contaminants such as particles adhering to a surface of a substrate attain a high throughput and effectively remove the particles and the like. To clean the back surface Wb of the substrate W, DIW cooled down to a temperature near its freezing point and cooling gas which is at a lower temperature than the freezing point of the DIW are discharged toward the center of the lower surface of the substrate which rotates. When thus cooled DIW flows along the back surface Wb of the substrate W, the particles and the like adhering to the substrate are removed. | 12-16-2010 |
20120090647 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface. | 04-19-2012 |
20120175819 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - DIW in an excessively cooled state is supplied as a solidification liquid to a substrate W, and a solidified material of the DIW is formed by a landing impact on the substrate W. This makes the use of a gaseous refrigerant necessary to form a solidified material unnecessary, eliminates the need for a facility to generate the gaseous refrigerant, shortens a processing time and further enables running cost and the like to be suppressed. | 07-12-2012 |
20120186275 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A cooling gas discharge nozzle | 07-26-2012 |
20130167877 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - In a substrate processing apparatus, a liquid film of a supercooled liquid of pure water is formed on the upper surface of a substrate and then cooled with cooling gas into a frozen film. The temperature of the liquid film is lower than the freezing point of pure water, and thus the liquid film is in an easy-to-freeze state. Thus, the time required to freeze the liquid film can be shortened. Even if the temperature of the cooling gas is increased, the liquid film can be speedily frozen as compared with the case in which a liquid film is formed of pure water having a temperature higher than its freezing point. Thus, heat insulating facilities such as piping that supply cooling gas can be simplified. This results in a reduction of the cooling cost required to freeze the liquid film. | 07-04-2013 |
20140174483 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface. | 06-26-2014 |
20150020850 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus comprises: a liquid film former which forms a liquid film by supplying a liquid on an upper surface of the substrate W held horizontally; a cooling gas discharge nozzle which discharges cooling gas of a temperature lower than a freezing point of the liquid forming the liquid film to the liquid film; a thawing liquid discharge nozzle which discharges a thawing liquid to a frozen film formed by freezing the liquid film; a thawing liquid supplier which supplies the heated thawing liquid to the thawing liquid discharge nozzle via a pipe; and a receiver which receives the cooling gas and the thawing liquid respectively discharged from the cooling gas discharge nozzle and the thawing liquid discharge nozzle at the respective retracted position and guides the cooling gas and the thawing liquid to a common flow passage. | 01-22-2015 |
20150020852 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus comprises: an air flow generator which generates a down flow by gas flowing from top to bottom around a substrate W held horizontally; a liquid film former which forms a liquid film by supplying a liquid on an upper surface of the substrate; a cooling gas discharge nozzle which discharges cooling gas of a temperature lower than a freezing point of the liquid to the liquid film and thereby freezes the liquid film; and a remover which removes a frozen film formed by freezing the liquid film from the substrate. The air flow generator reduces a flow velocity of the down flow when the cooling gas is discharged to the liquid film from the cooling gas discharge nozzle than when the liquid is supplied to the substrate from the liquid film former. | 01-22-2015 |