Patent application number | Description | Published |
20110303274 | SOLAR CELLS WITH PLATED BACK SIDE SURFACE FIELD AND BACK SIDE ELECTRICAL CONTACT AND METHOD OF FABRICATING SAME - The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer. | 12-15-2011 |
20110309508 | Method and Structure of Forming Silicide and Diffusion Barrier Layer With Direct Deposited Film on Silicon - A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers. | 12-22-2011 |
20120091589 | METHOD TO ELECTRODEPOSIT NICKEL ON SILICON FOR FORMING CONTROLLABLE NICKEL SILICIDE - The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells. | 04-19-2012 |
20120295390 | SINGLE-CRYSTALLINE SILICON ALKALINE TEXTURING WITH GLYCEROL OR ETHYLENE GLYCOL ADDITIVES - Alternative additives that can be used in place of isopropyl alcohol in aqueous alkaline etchant solutions for texturing a surface of a single-crystalline silicon substrate are provided. The alternative additives do not have volatile constituents, yet can be used in an aqueous alkaline etchant solution to provide a pyramidal shaped texture surface to the single-crystalline silicon substrate that is exposed to such an etchant solution. Also provided is a method of forming a textured silicon surface. The method includes immersing a single-crystalline silicon substrate into an etchant solution to form a pyramid shaped textured surface on the single-crystalline silicon substrate. The etchant solution includes an alkaline component, silicon (etched into the solution as a bath conditioner) and glycerol or ethylene glycol as an additive. The textured surface of the single-crystalline silicon substrate has (111) faces that are now exposed. | 11-22-2012 |
20120305066 | USE OF METAL PHOSPHORUS IN METALLIZATION OF PHOTOVOLTAIC DEVICES AND METHOD OF FABRICATING SAME - A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided. | 12-06-2012 |
20120318341 | PROCESSES FOR UNIFORM METAL SEMICONDUCTOR ALLOY FORMATION FOR FRONT SIDE CONTACT METALLIZATION AND PHOTOVOLTAIC DEVICE FORMED THEREFROM - Processes for fabricating photovoltaic devices in which the front side contact metal semiconductor alloy metallization patterns have a uniform thickness at edge portions as well as a central portion of each metallization pattern are provided. In one embodiment, a method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate; forming a plurality of patterned antireflective coating layers on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger regions; forming a mask atop the plurality of patterned antireflective coating layers, the mask having a shape that mimics each patterned antireflective coating; electrodepositing a metal layer on the busbar region and the finger regions; removing the mask; and performing an anneal, wherein during the anneal metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy. | 12-20-2012 |
20120325312 | SOLAR CELLS WITH PLATED BACK SIDE SURFACE FIELD AND BACK SIDE ELECTRICAL CONTACT AND METHOD OF FABRICATING SAME - The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer. | 12-27-2012 |
20130001784 | METHOD AND STRUCTURE OF FORMING SILICIDE AND DIFFUSION BARRIER LAYER WITH DIRECT DEPOSITED FILM ON SI - A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers. | 01-03-2013 |
20130014812 | PHOTOVOLTAIC DEVICE WITH ALUMINUM PLATED BACK SURFACE FIELD AND METHOD OF FORMING SAMEAANM Fisher; Kathryn C.AACI BrooklynAAST NYAACO USAAGP Fisher; Kathryn C. Brooklyn NY USAANM Huang; QiangAACI Sleepy HollowAAST NYAACO USAAGP Huang; Qiang Sleepy Hollow NY USAANM Papa Rao; Satyavolu S.AACI PoughkeepsieAAST NYAACO USAAGP Papa Rao; Satyavolu S. Poughkeepsie NY USAANM Yeh; Ming-LingAACI BaltimoreAAST MDAACO USAAGP Yeh; Ming-Ling Baltimore MD US - A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other. A plurality of patterned antireflective coating layers is located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. Aluminum is located directly on the at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed. | 01-17-2013 |
20140000693 | INTEGRATION OF A TITANIA LAYER IN AN ANTI-REFLECTIVE COATING | 01-02-2014 |