Patent application number | Description | Published |
20080242035 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The performance of the semiconductor device which formed the metal silicide layer in the salicide process is improved. An element isolation region is formed in a semiconductor substrate by the STI method, a gate insulating film is formed, a gate electrode is formed, n | 10-02-2008 |
20090079007 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention can prevent occurrence of an off-leak current in the NMISFETs formed over the Si (110) substrate and having a silicided source/drain region. The semiconductor device includes N channel MISFETs (Metal Insulator Semiconductor Field Effect Transistors) which are formed over a semiconductor substrate having a main surface with a (110) plane orientation and have a source region and a drain region at least one of which has thereover nickel silicide or a nickel alloy silicide. Of these NMISFETs, those having a channel width less than 400 nm are laid out so that their channel length direction is parallel to a <100> crystal orientation. | 03-26-2009 |
20090283909 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole. | 11-19-2009 |
20090291537 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, including the steps of preparing a silicon substrate which has a main surface whose plane direction is a surface (100); forming an n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) which has a gate electrode, a source region, a drain region and a channel whose channel length direction is parallel to a crystal orientation <100> of the silicon substrate; and forming NiSi over the gate electrode and NiSi | 11-26-2009 |
20100171183 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLANTATION BEFORE SILICIDE PROCESS - An N-type source region and an N-type drain region of N-channel type MISFETs are implanted with ions (containing at least one of F, Si, C, Ge, Ne, Ar and Kr) with P-channel type MISFETs being covered by a mask layer. Then, each gate electrode, source region and drain region of the N- and P-channel type MISFETs are subjected to silicidation (containing at least one of Ni, Ti, Co, Pd, Pt and Er). This can suppress a drain-to-body off-leakage current (substrate leakage current) in the N-channel type MISFETs without degrading the drain-to-body off-leakage current in the P-channel type MISFETs. | 07-08-2010 |
20100230761 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To improve the performance of semiconductor devices. Over an n | 09-16-2010 |
20110207317 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole. | 08-25-2011 |
Patent application number | Description | Published |
20090200887 | DYNAMOELECTRIC MACHINE - The present invention provides a dynamoelectric machine that suppresses the occurrence of insulation failure that accompanies oxidation of a stator core without lowering output, and that also suppresses stator temperature increases by transferring heat that is generated in a stator coil efficiently to a frame. | 08-13-2009 |
20100176684 | DYNAMOELECTRIC MACHINE - An AC generator comprises a shaft, a rotor secured to the shaft, a stator with a stator core provided to surround the outer circumference of the rotor and having a plurality of slots formed to extend in the axial direction while spaced apart in the circumferential direction, and a front bracket and a rear bracket surrounding the stator core while clamping the circumferential edge portion of the stator core from the opposite sides in the axial direction using a plurality of clamping means. A pair of front stays formed in the front bracket are secured to a vehicle by means of bolts penetrating a pair of through holes formed, respectively, in the pair of front stays. The pair of through holes are formed at such positions as the perpendicular bisector of a line connecting the centers intersects the axis of the shaft, and one clamping means is provided on the shaft side perpendicular bisector. With such an arrangement, generation of magnetic noise can be prevented without increasing the weight of the bracket and thereby the overall weight. | 07-15-2010 |
20110146058 | DYNAMOELECTRIC MACHINE AND MANUFACTURING METHOD FOR STATOR USED THEREIN - Respective divided segments of a collet are moved radially outward by moving an arbor axially. The respective divided segments thereby press an inner circumferential surface of a stator core of a stator from radially inside such that the stator is held coaxially by the collet. Next, shaping rollers are lowered so as to press an outer circumferential surface of the stator core. The stator is rotated by rotating the collet in that state. Thus, the inner circumferential surface of the stator core is compressed and plastically deformed so as to conform to the collet and the outer circumferential surface of the stator core is compressed and plastically deformed by the shaping rollers, correcting the inner circumferential surface and the outer circumferential surface of the stator core so as to be coaxial and so as to have a high degree of roundness. | 06-23-2011 |