Patent application number | Description | Published |
20080247172 | Light recycling illumination systems having restricted angular output - This invention is an illumination system that incorporates a light emitting diode and a partially reflecting optical element. The light emitting diode emits internally generated light having a first angular range and reflects incident light with high reflectivity. The partially reflecting optical element transmits a first portion of the internally generated light with a second angular range, smaller than the first angular range, and reflects a second portion of the internally generated light back to the light emitting diode, where the second portion is reflected by the light emitting diode. The partially reflecting optical element can be a pyramid, an array of pyramids, a first and second orthogonal arrays of prisms or a bandpass filter. Utilizing a partially reflecting optical element and light recycling can increase the effective brightness and the output efficiency of the illumination system. | 10-09-2008 |
20080258165 | Light emitting diode chip - A substrate-free LED chip has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are etched into the multilayer semiconductor structure using a first pulsed laser beam. By scanning a second pulsed laser beam through the growth substrate to the multilayer semiconductor structure, the LED chips are detached from the growth substrate while simultaneously forming surface features on the chips. | 10-23-2008 |
20090140272 | Solid-state light source - A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source. | 06-04-2009 |
20090140279 | Substrate-free light emitting diode chip - A light emitting diode (LED) chip has a multilayer semiconductor structure that is at least 10 microns thick and does not require an attached growth substrate or transfer substrate for structural rigidity or support. The multilayer semiconductor structure includes a first doped layer, a second doped layer and an active region interposed between the first doped layer and the second doped layer. Optionally, the multilayer semiconductor structure includes an undoped layer. At least one of the layers of the multilayer semiconductor structure is at least 5 microns thick and is preferably deposited by hydride vapor phase epitaxy. | 06-04-2009 |
20090173954 | Semiconducting sheet - A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements. | 07-09-2009 |
20090217970 | Fixtures for large area directional and isotropic solid state lighting panels - Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source. | 09-03-2009 |
20090218589 | Semiconductor die with reduced thermal boundary resistance - Thermal boundary resistances within nitride semiconductor LEDs are reduced or eliminated by forming a thick nitride epitaxial layer, which can be separated from a growth substrate, and by reducing the number of thermal boundary layers during laser lift-off. The thermal boundary resistances within nitride semiconductor LEDs can also be reduced or eliminated by forming a plurality of thin nitride epitaxial layers. | 09-03-2009 |
20090221106 | Article and method for color and intensity balanced solid state light sources - Subtractive and/or additive techniques can adjust both color and/or intensity in solid wavelength conversion materials. | 09-03-2009 |
20100032682 | Large area thin freestanding nitride layers and their use as circuit layers - Thin flat crack-free freestanding nitride layers are fabricated by laser patterning of the interface and/or opposing surface of the nitride layer. The nitride layer is substantially flat once removed from the non-native substrate. The thin flat crack free nitride layers are between 3 and 250 microns thick and can have areas greater than 1 cm | 02-11-2010 |
20100038656 | Nitride LEDs based on thick templates - Thick HVPE templates of nitrides enhance both the growth conditions and resulting device performance of LEDs, power devices, solar cells, and other electrical elements. The use of HVPE templates greater than 15 microns allows for increased incorporation of indium and/or aluminum in alloys with gallium nitride relative to a thinner MOCVD template for a given reactor growth temperature. The use of these thicker templates further allows the formation of epitaxial chips. The use of this approach forms more efficient nitride devices between 520 nm and 1.7 microns. These devices may be used for both emitting and absorbing applications such as LEDs and solar cells. | 02-18-2010 |
20100060143 | Color stabilized light source having a thermally conductive luminescent element and a light emitting diode - A color stabilized light source has a thermally conductive luminescent element in conjunction with a light emitting diode. A thermal pathway through the LED allows the thermally conductive luminescent element to maintain its output level even at high flux levels. | 03-11-2010 |
20100060553 | LED display utilizing freestanding epitaxial LEDs - High resolution light emitting diode (LED) displays can be formed from freestanding small epitaxial LED chips or small LED arrays. The addressing elements for the LED display can be active matrix backplane. The LED display may use isotropic and directional luminescent elements. The LED displays can be flat screen, fixed image, projection or low resolution or high resolution direct view. A macro freestanding epitaxial LED chip with multiple addressable pixels is described which forms a complete microdisplay. | 03-11-2010 |
20100200837 | Dual sided processing and devices based on freestanding nitride and zinc oxide films - Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells. | 08-12-2010 |
20100248499 | Enhanced efficiency growth processes based on rapid thermal processing of gallium nitride films - Rapid thermal processing of freestanding gallium nitride wafers is used to form semiconductor devices. This high speed process is enabled by the low thermal inertia of the growth substrate and the use of a low thermal inertia susceptor. The use of a low thermal inertia susceptor consisting of, but not limited to, silicon carbide, silicon carbide coated graphite, and/or other platen materials. Infrared (IR) heating is a preferred approach for increasing the temperature of the freestanding gallium nitride films via the susceptor but Radio Frequency (RF) and other methods are also approaches. | 09-30-2010 |
20100264452 | Methods for high temperature processing of epitaxial chips - High temperature semiconducting materials in a freestanding epitaxial chip enables the use of high temperature interconnect and bonding materials. Process materials can be used which cure, fire, braze, or melt at temperatures greater than 400 degrees C. These include, but are not limited to, brazing alloys, laser welding, high-temperature ceramics and glasses. High temperature interconnect and bonding materials can additionally exhibit an index of refraction intermediate to that of the freestanding epitaxial chip and its surrounding matrix. High index, low melting point glasses provide a hermetic seal of the semiconductor device and also index match the freestanding epitaxial chip thereby increasing extraction efficiency. In this manner, a variety of organic free semiconducting devices, such as solid-sate lighting sources, can be created which exhibit superior life, efficiency, and environmental stability. | 10-21-2010 |
20100308361 | Wavelength conversion chip for use with light emitting diodes and method for making same - A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips. | 12-09-2010 |
20110018011 | Solid-state light source - A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source. | 01-27-2011 |
20110024775 | Methods for and devices made using multiple stage growths - Surface modification of individual nitride semiconductor layers occurs between growth stages to enhance the performance of the resulting multiple layer semiconductor structure device formed from multiple growth stages. Surface modifications may include, but are not limited, to laser patterning, lithographic patterning (with the scale ranging from 10 microns to a few angstroms), actinic radiation modifications, implantation, diffusional doping and combinations of these methods. The semiconductor structure device has enhanced crystal quality, reduced phonon reflections, improved light extraction, and an increased emission area. The ability to create these modifications is enabled by the thickness of the HVPE growth of the GaN semiconductor layer. | 02-03-2011 |
20110284066 | Dual sided processing and devices based on freestanding nitride and zinc oxide films - Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells. | 11-24-2011 |
20120086028 | Wavelength conversion chip for use with light emitting diodes and method for making same - A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips. | 04-12-2012 |
20120205682 | Semiconducting sheet - A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements. | 08-16-2012 |
20120205683 | Semiconducting sheet - A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements. | 08-16-2012 |
20120280264 | Wavelength conversion chip for use with light emitting diodes and method for making same - A solid-state light source has a wavelength conversion chip affixed to a light emitting diode. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips. | 11-08-2012 |
20140036493 | FIXTURES FOR LARGE AREA DIRECTIONAL AND ISOTROPIC SOLID STATE LIGHTING PANELS - Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source. | 02-06-2014 |
20140146527 | FIXTURES FOR LARGE AREA DIRECTIONAL AND ISOTROPIC SOLID STATE LIGHTING PANELS - Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source. | 05-29-2014 |
20140147993 | LARGE AREA THIN FREESTANDING NITRIDE LAYERS AND THEIR USE AS CIRCUIT LAYERS - Thin flat crack-free freestanding nitride layers are fabricated by laser patterning of the interface and/or opposing surface of the nitride layer. The nitride layer is substantially flat once removed from the non-native substrate. The thin flat crack free nitride layers are between 3 and 250 microns thick and can have areas greater than 1 cm | 05-29-2014 |
20140153227 | FIXTURES FOR LARGE AREA DIRECTIONAL AND ISOTROPIC SOLID STATE LIGHTING PANELS - Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source. | 06-05-2014 |
20140319533 | FLEXIBLE SEMICONDUCTOR DEVICES BASED ON FLEXIBLE FREESTANDING EPITAXIAL ELEMENTS - Flexible semiconductor devices based on flexible freestanding epitaxial elements are disclosed. The flexible freestanding epitaxial elements provide a virgin as grown epitaxy ready surface for additional growth layers. These flexible semiconductor devices have reduced stress due to the ability to flex with a radius of curvature less than 100 meters. Low radius of curvature flexing enables higher quality epitaxial growth and enables 3D device structures. Uniformity of layer formation is maintained by direct absorption of actinic radiation by the flexible freestanding epitaxial element within a reactor. In addition, standard post processing steps like lithography are enabled by the ability of the devices and elements to be flattened using a secondary support element or vacuum. Finished flexible semiconductor devices can be flexed to a radius of curvature of less than 100 meters. Nitrides, Zinc Oxides, and their alloys are preferred materials for the flexible freestanding epitaxial elements. | 10-30-2014 |
20140362563 | Fixtures for large area directional and isotropic solid state lighting panels - Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source. | 12-11-2014 |