Patent application number | Description | Published |
20090146191 | LOW LEAKAGE SCHOTTKY CONTACT DEVICES AND METHOD - Method and apparatus are described for semiconductor devices. The method ( | 06-11-2009 |
20110156051 | SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTTKY CONTACTS - Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the first mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced. | 06-30-2011 |
20120156843 | DIELECTRIC LAYER FOR GALLIUM NITRIDE TRANSISTOR - A dielectric layer for a gallium nitride transistor is disclosed. In one example, the dielectric layer has a hydrogen content of less than or equal to 10% by atomic percentage. In one example, both a dielectric layer formed before a conductive electrode of the transistor and a dielectric layer formed after the conductive elective electrode have a hydrogen content of less than or equal to 10% by atomic percentage. In one example, the dielectric layer formed before the conductive electrode is formed by a LPCVD process and the dielectric layer formed after the conductive electrode is formed by a sputtering process. | 06-21-2012 |
20130277680 | High Speed Gallium Nitride Transistor Devices - A low leakage current switch device ( | 10-24-2013 |
20130341678 | Semiconductor Device with Selectively Etched Surface Passivation - A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel. | 12-26-2013 |
20130341679 | Semiconductor Device with Selectively Etched Surface Passivation - A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer. | 12-26-2013 |
20140087550 | METHODS OF MAKING SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTKYCONTACTS - Embodiments include methods of making semiconductor devices with low leakage Schottky contacts. An embodiment includes providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced. | 03-27-2014 |
20150132932 | SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION - A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel. | 05-14-2015 |