Patent application number | Description | Published |
20090044661 | METHODS AND APPARATUS FOR THE PRODUCTION OF GROUP IV NANOPARTICLES IN A FLOW-THROUGH PLASMA REACTOR - A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode. | 02-19-2009 |
20090107359 | PREPARATION OF GROUP IV SEMICONDUCTOR NANOPARTICLE MATERIALS AND DISPERSIONS THEREOF - A method of forming an ink, the ink configured to form a conductive densified film is disclosed. The method includes providing a set of Group IV semiconductor particles, wherein each Group IV semiconductor particle of the set of Group IV semiconductor particles includes a particle surface with a first exposed particle surface area. The method also includes reacting the set of Group IV semiconductor particles to a set of bulky capping agent molecules resulting in a second exposed particle surface area, wherein the second exposed particle surface area is less than the first exposed particle surface area. The method further includes dispersing the set of Group IV semiconductor particles in a vehicle, wherein the ink is formed. | 04-30-2009 |
20090239330 | METHODS FOR FORMING COMPOSITE NANOPARTICLE-METAL METALLIZATION CONTACTS ON A SUBSTRATE - A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region. | 09-24-2009 |
20090255222 | METHODS AND APPARATUS FOR THE IN SITU COLLECTION OF NUCLEATED PARTICLES - A particle collection apparatus is disclosed. The apparatus includes a baghouse housing comprising an entrance port, a collection port, a baghouse configured between the entrance port and the collection port, and a vacuum port coupled to the baghouse. The apparatus also includes a collection mechanism coupled to the collection port; and, a compression mechanism coupled to the baghouse. | 10-15-2009 |
20090325336 | METHODS FOR PRINTING AN INK ON A TEXTURED WAFER SURFACE - A method of printing an ink on a wafer surface configured with a set of non-rounded peaks and a set of non-rounded valleys is disclosed. The method includes exposing the wafer including at least some non-rounded peaks and at least some of the non-rounded valleys in a region to an etchant. The method further includes depositing the ink on the region, wherein a set of rounded peaks and a set of rounded valleys are formed. | 12-31-2009 |
20100034986 | Low viscosity precursor compositions and methods for the deposition of conductive electronic features - A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features. | 02-11-2010 |
20100136771 | SUB-CRITICAL SHEAR THINNING GROUP IV BASED NANOPARTICLE FLUID - A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles. | 06-03-2010 |
20100178718 | METHODS FOR IMPROVING PERFORMANCE VARIATION OF A SOLAR CELL MANUFACTURING PROCESS - A method for optimizing a solar cell manufacturing process is described. The method includes determining a reference finger spacing value and a reference bulk lifetime for the solar cell manufacturing process. The method also includes measuring an actual bulk lifetime of a wafer with an in-line measurement tool. The method further includes calculating an optimal finger spacing value with a computer coupled to the in-line measurement tool, the optimal finger spacing value being the product of the reference finger spacing value and a square root of the actual bulk lifetime divided by the square root of the reference bulk lifetime. The method further includes forming a junction on the wafer, and depositing a set of busbars and a set of fingers on the wafer with a metal deposition device, wherein a distance between a first finger and a second finger of the set of fingers is about the optimal finger spacing value. | 07-15-2010 |
20100269634 | PRODUCTION OF METAL NANOPARTICLES - A process for the production of metal nanoparticles. The process comprises a rapid mixing of a solution of at least about 0.1 mole of a metal compound that is capable of being reduced to a metal by a polyol with a heated solution of a polyol and a substance that is capable of being adsorbed on the nanoparticles. | 10-28-2010 |
20100269635 | PRODUCTION OF METAL NANOPARTICLES - Processes for the production of metal nanoparticles. In one aspect, the invention is to a process comprising the steps of mixing a heated first solution comprising a base and/or a reducing agent (e.g., a non-polyol reducing agent), a polyol, and a polymer of vinyl pyrrolidone with a second solution comprising a metal precursor that is capable of being reduced to a metal by the polyol. In another aspect, the invention is to a process that includes the steps of heating a powder of a polymer of vinyl pyrrolidone; forming a first solution comprising the powder and a polyol; and mixing the first solution with a second solution comprising a metal precursor capable of being reduced to a metal by the polyol. | 10-28-2010 |
20100275982 | GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM - A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced. | 11-04-2010 |
20110003466 | METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON - A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front crystalline substrate surface; and forming a mask on the front crystalline substrate surface, the mask comprising exposed mask areas and non-exposed mask areas. The method also includes exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; and removing the mask. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl | 01-06-2011 |
20110012066 | GROUP IV NANOPARTICLE FLUID - A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles-comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles. | 01-20-2011 |
20110303885 | METAL NANOPARTICLE COMPOSITIONS - A metal nanoparticle composition for the fabrication of conductive features. The metal nanoparticle composition advantageously has a low viscosity permitting deposition of the composition by direct-write tools. The metal nanoparticle composition advantageously also has a low conversion temperature, permitting its deposition and conversion to an electrical feature on polymeric substrates. | 12-15-2011 |
20120009721 | GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM - A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced. | 01-12-2012 |
20130099179 | METAL NANOPARTICLE COMPOSITIONS FOR REFLECTIVE FEATURES - A composition for the fabrication of reflective features using a direct-write tool is disclosed. The composition comprises metal nanoparticles having an average particle size less than 300 nm and which carry thereon a polymer for substantially preventing agglomeration of the nanoparticles, wherein the nanoparticles exhibit a metal-polymer weight ratio of 100:1 to 10:1. The composition further includes a vehicle for forming a dispersion with the metal nanoparticles. A number of electronic devices comprising a reflective layer formed from the composition are also disclosed. One example case provides an electronic device having a reflective electrode. The reflective electrode comprises a percolation network of the metal nanoparticles embedded in a matrix of the polymer and having an average particle size of less than 300 nm, wherein the reflective electrode is reflective in the visible light range and does not diffract incident light. | 04-25-2013 |
20140042652 | GAS DISPERSION MANUFACTURE OF NANOPARTICULATES, AND NANOPARTICULATE-CONTAINING PRODUCTS AND PROCESSING THEREOF - In one aspect, the present invention relates to a method of making multi-phase particles that include nanoparticulates and matrix, which maintains the nanoparticulates in a dispersed state. A flowing gas dispersion is generated that includes droplets of a precursor medium dispersed in a gas phase. The precursor medium contains liquid vehicle and at least a first precursor to a first material and a second precursor to a second material. The multi-phase particles are formed from the gas dispersion by removing at least a portion of the liquid vehicle from the droplets of precursor medium. The nanoparticulates in the multi-phase particles include the first material and the matrix in the multi-phase particles includes the second material. | 02-13-2014 |