Patent application number | Description | Published |
20080210883 | Liquid metal ion gun - An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture. | 09-04-2008 |
20080237459 | Ion source and mass spectrometer instrument using the same - An ion source includes a body having a gas passage and an orifice. A capillary is inserted into the gas passage so that a tip portion of the capillary extends into the orifice. A gas supplier supplies a gas into the gas passage to form a gas flow through the gas passage along the capillary and through the orifice past a tip of the capillary so that the gas flow sprays a sample solution flowing through the capillary from the tip of the capillary. A flow controller regulates a pressure of the gas in the gas passage to adjust a characteristic value F/S to a predetermined value, where F is a flow rate of the gas flow at standard conditions (20.degree. C., 1 atmosphere), and S is a difference between a cross section of the orifice and a cross section of the tip portion of the capillary in the orifice. | 10-02-2008 |
20080283778 | Apparatus for ion beam fabrication - The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis. | 11-20-2008 |
20090218490 | APPARATUS AND METHOD OF SEMICONDUCTOR DEFECT INSPECTION - An object of the present invention is to provide an apparatus and a method of semiconductor defect inspection in which an optimal process condition can be determined without performing electrical evaluation. To achieve the object, the present invention includes a configuration in which the type of an extracted defect is identified with reference to a database that stores the types of defects obtained by inspecting a sample, a defect density according to each defect type is obtained for each region of the sample, and the defect density is displayed. Moreover, the present invention includes a configuration in which the type of an extracted defect is identified with reference to a database that stores the types of defects obtained by inspecting a sample, a defect density according to each defect type is determined for each production process of the sample, and the defect density is displayed on a display. | 09-03-2009 |
20090230299 | ION SOURCE, ION BEAM PROCESSING/OBSERVATION APPARATUS, CHARGED PARTICLE BEAM APPARATUS, AND METHOD FOR OBSERVING CROSS SECTION OF SAMPLE - An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve. | 09-17-2009 |
20100176297 | ION BEAM PROCESSING APPARATUS - An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction. | 07-15-2010 |
20110133765 | METHOD AND APPARATUS FOR PROBE CONTACTING - There is provided a method and a device for accurately detecting the contact of a mechanical probe with a contact object. The contact detecting device comprises a mechanical probe movable for being in contact with a contacted object, a charged particle beam source which generates a charged particle beam applied to the contacted object, a detector for detecting secondary particles or reflected particles from the contacted object, a calculating device which calculates, from a detection signal from the detector, a feature quantity of a shadow of the mechanical probe projected on the contacted object, and a control device which controls the operation of the mechanical probe. The calculating device calculates, as the feature quantity of the shadow of the mechanical probe, a shadow depth S(x, y), and obtains an evaluation value J(z), showing a distance between the contacted object and the mechanical probe, based on the shadow depth S(x, y). | 06-09-2011 |
20110174974 | METHOD AND APPARATUS FOR PROCESSING A MICROSAMPLE - An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage. | 07-21-2011 |
20120273692 | METHOD AND APPARATUS FOR PROCESSING A MICROSAMPLE - An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage. | 11-01-2012 |
20130284593 | ION SOURCE, ION BEAM PROCESSING/OBSERVATION APPARATUS, CHARGED PARTICLE BEAM APPARATUS, AND METHOD FOR OBSERVING CROSS SECTION OF SAMPLE - An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve. | 10-31-2013 |
20130320209 | ION BEAM PROCESSING APPARATUS - An ion beam processing apparatus includes an ion beam irradiation optical system that irradiates a rectangular ion beam to a sample on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage to hold a test piece, extracted from the sample. The ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction. | 12-05-2013 |
Patent application number | Description | Published |
20080296497 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition. | 12-04-2008 |
20080296516 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber with an ion beam; a specimen holder to mount a specimen separated by the irradiation with the ion beam; a holder cassette to hold the specimen holder; a sample stage to hold, the sample and the holder cassette; and a probe to move the specimen to the specimen holder, wherein the holder cassette is transferred to outside of the chamber in a condition of holding the specimen holder with the specimen mounted. | 12-04-2008 |
20090008578 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber, with an ion beam; a specimen holder to mount a specimen separated by the irradiation with the ion beam; a holder cassette to hold the specimen holder; a sample stage to hold the sample and the holder cassette; and a probe to move the specimen to the specimen holder, wherein the holder cassette is transferred to outside of the chamber in a condition of holding the specimen holder with the specimen mounted. | 01-08-2009 |
20110140006 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A focused ion beam apparatus, including: a specimen transferring unit having a probe to which a micro-specimen extracted from a specimen, can be joined through a joining deposition film, for transferring the micro-specimen to a sample holder; and wherein, the specimen transferring unit holds the probe which is joined through the joining deposition film to the micro-specimen extracted from the specimen, and the sample stage moves so that the sample holder mounted on the holder clasp is provided into an irradiated range of the focused ion beam, and the specimen transferring unit approaches the probe to the sample holder, and the gas nozzle supplies the deposition gas so that the micro-specimen is fixed to the sample holder through a fixing deposition film, and the ion beam irradiating optical system irradiates the focused ion beam to the micro-specimen fixed to the sample holder for various procedures. | 06-16-2011 |
20120085924 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A focused ion beam apparatus, including: a sample holder provided with a fixing surface for fixing, via a deposition film, a micro-specimen extracted from a specimen using a method for fabrication by a focused ion beam, in which a width of the fixing surface is smaller than 50 microns; a specimen transferring unit having a probe to which the specimen can be joined through the deposition film, and transferring the micro-specimen extracted from the specimen by the focused ion-beam fabrication method, to the sample holder; and a sample chamber in which the sample, the sample holder and the probe are laid out, wherein, in the sample chamber, the micro-specimen extracted from the specimen by the focused ion-beam fabrication method is fixed to the fixing surface of the sample holder through the deposition film, and the micro-specimen fixed to the fixing surface is fabricated by irradiating the focused ion beam. | 04-12-2012 |