Patent application number | Description | Published |
20100176277 | SOLID-STATE IMAGE PICKUP ELEMENT AND DRIVING METHOD THEREOF - A solid-state image pickup element includes: (A) a light receiving/charge accumulating region formed in a semiconductor layer and formed by laminating M (where M≧2) light receiving/charge accumulating layers; (B) a charge outputting region formed in the semiconductor layer; (C) a depletion layer forming region formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region and the charge outputting region; and (D) a control electrode region for controlling a state of formation of a depletion layer in the depletion layer forming region, wherein the solid-state image pickup element further includes a light receiving/charge accumulating layer extending section extending from each light receiving/charge accumulating layer to the depletion layer forming region. | 07-15-2010 |
20100213354 | SOLID-STATE IMAGING ELEMENT AND DRIVING METHOD OF THE SOLID-STATE IMAGE ELEMENT - Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers. | 08-26-2010 |
20110102648 | Imaging Apparatus and method, electronic device, and program - An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel. | 05-05-2011 |
20120223405 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer. | 09-06-2012 |
20130277535 | SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light receiving section which stores a charge generated by photoelectric conversion, a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and a signal output section to which a gate electrode of the MOS capacitor is connected. | 10-24-2013 |
20140117429 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer. | 05-01-2014 |
20140253765 | SIGNAL PROCESSING UNIT, SOLID-STATE IMAGE PICKUP UNIT, ELECTRONIC APPARATUS, SIGNAL PROCESSING METHOD, AND PROGRAM - A signal processing unit includes: an extraction section configured to extract variation between a plurality of sampling values obtained through a plurality of sampling operations of signal levels in one or both of a first state and a second state, the first state being a state where floating diffusion is reset, the floating diffusion temporarily accumulating charges transferred from a photodiode performing photoelectric conversion, and the second state being a state where charges generated in the photodiode are accumulated in the floating diffusion; and a comparison section configured to compare the variation extracted by the extraction section and a predetermined reference value, and to switch, based on a result of the comparison, a signal to be output to a processing section in a subsequent stage. | 09-11-2014 |
20150325617 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer. | 11-12-2015 |