Kanechika, JP
Masakazu Kanechika, Aichi-Gun JP
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20100013006 | SEMICONDUCTOR DEVICE - A semiconductor device has a semiconductor substrate having a surface layer and a p-type semiconductor region, wherein the surface layer includes a contact region, a channel region and a drift region, the channel region is adjacent to and in contact with the contact region, the drift region is adjacent to and in contact with the channel region and includes n-type impurities at least in part, and the p-type semiconductor region is in contact with the drift region and at least a portion of a rear surface of the channel region, a main electrode disposed on the surface layer and electrically connected to the contact region, a gate electrode disposed on the surface layer and extending from above a portion of the contact region to above at least a portion of the drift region via above the channel region, and an insulating layer covering at least the portion of the contact region and not covering at least the portion of the drift region. The gate electrode and the contact region are insulated by the insulating layer, and the gate electrode and the drift region are in direct contact to form a Schottky junction. | 01-21-2010 |
20100044753 | SEMICONDUCTOR DEVICE - A nitride semiconductor device | 02-25-2010 |
Masakazu Kanechika, Nagakute-Shi JP
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20150295073 | SWITCHING DEVICE - A switching device provided herewith includes first to fourth semiconductor layers and a gate electrode. The second semiconductor layer is of a first conductive type or an un-dope type and located on the first semiconductor layer. A hetero junction is formed between the first and the second semiconductor layers. The third semiconductor layer is of a second conductive type and located on the second semiconductor layer. The fourth semiconductor layer is of a second conductive type and located on the third semiconductor layer. A hetero junction is formed between the third and the fourth semiconductor layers. The gate electrode electrically connected to the fourth semiconductor layer. | 10-15-2015 |
Masayuki Kanechika, Tokyo JP
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20080211379 | Fluorescent Lamp - The disclosed subject matter includes a fluorescent lamp and particularly a cold cathode fluorescent lamp that can be employed as a light source for a LCD backlight unit for a television, a computer, a display, and the like. The fluorescent lamp can include a couple of electrode units located opposite to each other at each end of a tube, a couple of welding beads sealing both the tube and the couple of electrode units, and a filler gas located in the tube. Each of the electrode units can include an emitter electrode that is configured with a crystalline silicon carbide material having an electrical conductivity and including a concave portion formed thereon. The electrode units can prevent blackening on an inner surface of the tube by avoiding the occurrence of spattering. Thus, the fluorescent lamp using the electrode units can enjoy a long life, high reliability, easy manufacture, and the like. | 09-04-2008 |
20080265738 | Fluorescent Lamp - The disclosed subject matter includes a fluorescent lamp and particularly a cold cathode fluorescent lamp that can be employed as a light source for a LCD backlight unit for a television, a computer, a display, and the like. The fluorescent lamp can include a couple of electrode units located opposite to each other at each end of a tube, a couple of welding beads sealing both the tube and the couple of electrode units, and a filler gas located in the tube. Each of the electrode units can include an emitter electrode that is configured with a crystalline silicon semiconductor material having an electrical conductivity or configured with other semiconductor materials, and can include a concave portion formed thereon. The electrode units can prevent blackening on an inner surface of the tube by avoiding the occurrence of spattering. Thus, the fluorescent lamp using the electrode units can enjoy a long life, high reliability, easy manufacture, and the like. | 10-30-2008 |
Masayuki Kanechika, Yokohama-Shi JP
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20110201181 | APPARATUS AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL FILM - An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber. | 08-18-2011 |
Yukihiro Kanechika, Shunan-Shi JP
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20080300128 | Process for Producing an Aluminum Nitride Sintered Body - An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK. | 12-04-2008 |
20100015370 | Process for Producing Integrated Body from Aluminum Nitride Sintered Body and High-Melting Point Metal Member - A process for producing integrated bodies from an aluminum nitride sintered body and a high-melting point metal member includes the steps of: (I) forming an aluminum nitride porous layer on a planned joint surface of the aluminum nitride sintered body; and (II) causing a mixture paste including aluminum nitride and a high-melting point metal to be present between the aluminum nitride porous layer and a planned joint surface of the high-melting point metal member while impregnating the porous layer with the mixture paste, and sintering the aluminum nitride and high-melting point metal in the mixture paste. | 01-21-2010 |
20100093514 | Aluminum Nitride Sintered Body and Production Process for the Same - A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body. The above sintered body is achieved by an aluminum nitride sintered body having a concentration of residual oxygen excluding attached oxygen of 350 ppm or less. | 04-15-2010 |
20100233393 | Process for Producing Aluminum Nitride Sintered Body - A process for producing an aluminum nitride sintered body having improved light transmission properties includes the step of subjecting an ordinary aluminum nitride sintered body to thermal treatment in an inert atmosphere at a temperature of from 1300 to 1400° C. for at least 1 hr. A cover for light sources is produced by the process and includes a hollow aluminum nitride sintered body having a light transmittance in the visible light region of at least 87%, which body is obtainable by thermally treating a hollow aluminum nitride sintered body in an inert atmosphere at a temperature of 1300 to 1400° C. for at least 1 hr. | 09-16-2010 |