| Patent application number | Description | Published |
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| 20080213646 | Proton-conductive composite electrolyte membrane and producing method thereof - A composite electrolyte membrane of the present invention includes a porous body composed of an inorganic substance and an electrolyte material. The porous body includes therein plural spherical pores in which a diameter is substantially equal, and communicating ports each allowing the spherical pores adjacent to each other to communicate with each other. The electrolyte material is provided on the spherical pores and the communicating ports, has proton conductivity, and is composed of a hydrocarbon polymer. The proton-conductive composite electrolyte membrane has excellent ion conductivity, high heat resistance, and restricted swelling when being hydrous, and is capable of being produced at low cost. | 09-04-2008 |
| 20080286349 | SYSTEMS, DEVICES, AND METHODS FOR PASSIVE TRANSDERMAL DELIVERY OF ACTIVE AGENTS TO A BIOLOGICAL INTERFACE - Systems, devices, and methods for transdermal delivery of one or more therapeutic active agents to a biological interface. A transdermal drug delivery system is provided for passive transdermal delivery of one or more ionizable active agents to a biological interface of a subject. A transdermal drug delivery system includes a backing substrate, and an active agent layer. The active layer includes a thickening agent, a plasticizer, and a therapeutically effective amount of an ionizable active agent. | 11-20-2008 |
| Patent application number | Description | Published |
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| 20080197453 | Semiconductor device and manufacturing method of the same - In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta | 08-21-2008 |
| 20090166815 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film. | 07-02-2009 |
| 20090194791 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A compound semiconductor device including an electron transport layer that is formed on a substrate and includes a III-V nitride compound semiconductor, a gate insulating film that is positioned above the compound semiconductor layer, and a gate electrode that is positioned on the gate insulating film. The gate insulating film includes a first insulating film that includes oxygen, at least a single metal element selected from a metal bonding with the oxygen and forming a metal oxide having a dielectric constant no less than 10, and at least a single metal element selected from Si and Al. | 08-06-2009 |
| 20100311233 | Semiconductor device manufacturing method - In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta | 12-09-2010 |
| 20110079771 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An intermediate layer composed of i-AlN is formed between a channel layer and an electron donor layer, a first opening is formed in an electron donor layer, at a position where a gate electrode will be formed later, while using an intermediate layer as an etching stopper, a second opening is formed in the intermediate layer so as to be positionally aligned with the first opening, by wet etching using a hot phosphoric acid solution, and a gate electrode is formed so that the lower portion thereof fill the first and second openings while placing a gate insulating film in between, and so that the head portion thereof projects above the cap structure. | 04-07-2011 |
| 20110079822 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A compound semiconductor device includes an electron transit layer; an electron supply layer formed over the electron transit layer; a first recessed portion and a second recessed portion formed in the electron supply layer; a chemical compound semiconductor layer including impurities that buries the first recessed portion and the second recessed portion and covers over the electron supply layer; a source electrode formed over the chemical compound semiconductor layer which buries the first recessed portion; a drain electrode formed over the chemical compound semiconductor layer which buries the second recessed portion; and a gate electrode formed over the electron supply layer between the source electrode and the drain electrode, wherein, in the chemical compound semiconductor layer, a concentration of impurities included below the source electrode and the drain electrode is higher than a concentration of impurities included near the gate electrode. | 04-07-2011 |
| 20110133206 | Compound semiconductor device - At a gate electrode formed on a compound semiconductor layer with a Schottky junction, a diffusion preventing layer made of Ti | 06-09-2011 |
