| Patent application number | Description | Published |
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| 20080198647 | METHOD AND APPARATUS FOR BITLINE AND CONTACT VIA INTEGRATION IN MAGNETIC RANDOM ACCESS MEMORY ARRAYS - In one embodiment, the invention is a method and apparatus for bitline and contact via integration in magnetic random access memory arrays. One embodiment of a magnetic random access memory according to the present invention includes a magnetic tunnel junction and a top wire that surrounds the magnetic tunnel junction on at least three sides. | 08-21-2008 |
| 20080211055 | Utilizing Sidewall Spacer Features to Form Magnetic Tunnel Junctions in an Integrated Circuit - Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization. | 09-04-2008 |
| 20090047784 | RESIST STRIPPING METHODS USING BACKFILLING MATERIAL LAYER - A method for fabricating a microelectronic structure provides for forming a backfilling material layer at least laterally adjacent, and preferably laterally adjoining, a resist layer located over a substrate. Preferably, the resist layer comprises a surface treated resist layer. Optionally, the backfilling material layer may be surface treated similarly to the surface treated resist layer. Under such circumstances: (1) surface portions of the backfilling material layer and resist layer; and (2) remaining portions of the backfilling material layer and resist layer, may be sequentially stripped using a two step etch method, such as a two step plasma etch method. Alternatively, a surface portion of the surface treated resist layer only may be stripped while using a first etch method, and the remaining portions of the resist layer and backfilling material layer may be planarized prior to being simultaneously stripped while using a second etch method. | 02-19-2009 |
| 20090279354 | Stacked Magnetic Devices - Techniques for improving magnetic device performance are provided. In one aspect, a magnetic device, e.g., a magnetic random access memory device, is provided which comprises a plurality of current carrying lines; and two or more adjacent stacked magnetic toggling devices sharing at least one of the plurality of current carrying lines in common and positioned therebetween. The magnetic device is configured such that at least one of the adjacent magnetic toggling devices toggles mutually exclusively of another of the adjacent magnetic toggling devices. In an exemplary embodiment, the magnetic device comprises a plurality of levels with each of the adjacent stacked magnetic toggling devices residing in a different level. | 11-12-2009 |
| Patent application number | Description | Published |
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| 20090059656 | Method and Structure for Improved Lithographic Alignment to Magnetic Tunnel Junctions in the Integration of Magnetic Random Access Memories - A magnetic memory device including a Magnetic Tunnel Junction (MTJ) device comprises a substrate and Front End of Line (FEOL) circuitry. A Via level (VA) InterLayer Dielectric (ILD) layer, a bottom conductor layer, and an MTJ device formed over the top surface of the VA ILD layer are formed over a portion of the substrate. An alignment region including alignment marks extends through the bottom conductor layer and extends down into the device below the top surface of the VA ILD layers is juxtaposed with the MJT device. | 03-05-2009 |
| 20090237982 | Magnetically De-Coupling Magnetic Tunnel Junctions and Bit/Word Lines for Reducing Bit Selection Errors in Spin-Momentum Transfer Switching - Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element. | 09-24-2009 |
| 20090291388 | Method for Forming a Self-Aligned Hard Mask for Contact to a Tunnel Junction - A method of forming a hard mask in a semiconductor device which is self-aligned with a MTJ formed in the device is provided. The method includes the steps of: forming a hard mask material layer on an upper surface of a magnetic stack in the MTJ; forming an anti-reflective coating (ARC) layer on at least a portion of an upper surface of the hard mask material layer, the ARC layer being selected to be removable by a wet etch; forming a photoresist layer on at least a portion of an upper surface of the ARC layer; removing at least a portion of the photoresist layer and the ARC layer to thereby expose at least a portion of the hard mask material layer; etching the hard mask material layer to remove the exposed portion of the hard mask material layer; and performing a wet strip to remove remaining portions of the ARC layer and photoresist layer in a same processing step without interference to the magnetic stack. | 11-26-2009 |
| 20110111596 | Sidewall Image Transfer Using the Lithographic Stack as the Mandrel - In one non-limiting exemplary embodiment, a method includes: providing a structure having at least one lithographic layer on a substrate, where the at least one lithographic layer includes a planarization layer (PL); forming a sacrificial mandrel by patterning at least a portion of the at least one lithographic layer using a photolithographic process, where the sacrificial mandrel includes at least a portion of the PL; and producing at least one microstructure by using the sacrificial mandrel in a sidewall image transfer process. | 05-12-2011 |
