Patent application number | Description | Published |
20080237836 | SEMICONDUCTOR CHIP EMBEDDING STRUCTURE - A semiconductor chip embedding structure is disclosed, including a carrier board having a first and an opposed second surfaces and formed with at least a through hole; a semiconductor chip received in the through hole, the chip having an active surface and an inactive surface opposite to one another, wherein the active surface has a plurality of electrode pads, a passivation layer is formed on the active surface with the electrode pads exposed from the passivation layer, and metal pads are formed on surfaces of the electrode pads; a buffer layer formed on the first surface of the carrier board and on surfaces of the passivation layer and the metal pads; a first dielectric layer formed on the buffer layer; and a first circuit layer formed on the first dielectric layer and electrically connected with the metal pads of the chip via first conductive structures formed in the buffer layer and the first dielectric layer, wherein the CTE (Coefficient of Thermal Expansion) of the buffer layer is between the CTE of the semiconductor chip and the CTE of the dielectric layer. Thereby, the buffer layer can reduce the stress on the interface between the dielectric layer and the semiconductor chip. | 10-02-2008 |
20090051024 | SEMICONDUCTOR PACKAGE STRUCTURE - A semiconductor package structure relates to a chip-embedded semiconductor package electrically connected to a second semiconductor component. The semiconductor package structure comprises a first packaging substrate having a first surface, a second surface and at least a first cavity penetrating through the first surface and the second surface. The semiconductor package structure includes a first semiconductor component with electrode pads disposed in the first cavity. A first build-up circuit structure comprising a plurality of third and fourth conductive pads, and a second semiconductor component with electrode pads is disposed on surfaces of the third conductive pads by a first conductive element. The semiconductor package structure also includes a second conductive element disposed on the fourth conductive pads of the first build-up circuit structure of the first packaging substrate and a stacked structure electrically connecting the stacked structure to the first build-up circuit structure disposed on the first packaging substrate. | 02-26-2009 |
20090090541 | STACKED SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - Provided is a stacked semiconductor device including a first flexible layer and a second flexible layer combined together, serving as a flexible substrate body being bent somewhere such that a surface of the first flexible layer itself is face-to-face clipped, two semiconductor chips each embedded in the flexible substrate body, and an adhesive layer sandwiched in a gap between the face-to-face surface of the first flexible layer. The active surface of each of the semiconductor chips has plurality of electrode pads thereon electrically connected to a first circuit layer on the second flexible layer. The semiconductor chips are stacked up and embedded in the flexible substrate body, thereby reducing package height to achieve miniaturization of electronic products. A method for fabricating the stacked semiconductor device is also provided. | 04-09-2009 |
20090166841 | PACKAGE SUBSTRATE EMBEDDED WITH SEMICONDUCTOR COMPONENT - A package substrate embedded with a semiconductor component includes a substrate, a semiconductor chip, a first dielectric layer, a first circuit layer and first conductive vias. The substrate is formed with an opening for allowing the semiconductor chip to be secured therein. The semiconductor chip has an active surface and an inactive surface, wherein a plurality of electrode pads are formed on the active surface thereof and a passivation layer disposed thereon. The first dielectric layer is disposed both on the substrate and the passivation layer, wherein vias are formed at locations corresponding to those of the electrode pads and penetrating the dielectric layer and the passivation layer to expose the electrode pads therefrom. The first circuit layer is disposed on the first dielectric layer and electrically connected to the first conductive vias. The first conductive vias are disposed in the openings of the dielectric and passivation layers and the first circuit layer is electrically connected to the electrode pads, thereby allowing the first conductive vias to be electrically connected to the electrode pads of the chip. | 07-02-2009 |
20090168380 | PACKAGE SUBSTRATE EMBEDDED WITH SEMICONDUCTOR COMPONENT - A package substrate embedded with a semiconductor component is provided. A semiconductor chip is received in a cavity of a substrate body, and has electrode pads on an active surface thereof. A passivation layer is disposed on the active surface and has openings for exposing the electrode pads. An electroless plating metal layer, a first sputtering metal layer and a second sputtering metal layer are sequentially formed on the electrode pads, the openings of the passivation layer and the passivation layer surface around the openings. Contact pads are formed on the second sputtering metal layer. A first dielectric layer is disposed on the substrate body and the passivation layer. A first circuit layer is formed on the first dielectric layer. First conductive vias are formed in the first dielectric layer and electrically connected to the contact pads. The first circuit layer is electrically connected to the first conductive vias. | 07-02-2009 |
20090309179 | PACKAGE SUBSTRATE HAVING EMBEDDED PHOTOSENSITIVE SEMICONDUCTOR CHIP AND FABRICATION METHOD THEREOF - A packaging substrate with an embedded photosensitive semiconductor chip and a method for fabricating the same are provided. The method includes the steps of: disposing the semiconductor chip in an through cavity of a core board with the photosensitive portion of the semiconductor chip being exposed from the through cavity; forming a first circuit layer on the core board at a side opposite to the photosensitive portion so as to electrically connect the electrode pads of the semiconductor chip; and forming a light-permeable layer on the core board at the same side with the photosensitive portion via an adhesion layer so as to allow light to penetrate through the light-permeable layer and reach the photosensitive portion of the semiconductor chip. When fabricated by the method, the packaging substrate dispenses with conductive wires and a surrounding dam and thus is efficiently downsized. | 12-17-2009 |
20090309202 | PACKAGE SUBSTRATE HAVING EMBEDDED SEMICONDUCTOR CHIP AND FABRICATION METHOD THEREOF - A packaging substrate having a semiconductor chip embedded and a fabrication method thereof are provided. The method includes forming a semiconductor chip in a through cavity of a core board and exposing a photosensitive portion of the semiconductor chip from the through cavity; sequentially forming a first dielectric layer and a first circuit layer on the core board, the first circuit layer being electrically connected to the electrode pads of the semiconductor chip; forming a light-permeable window on the first dielectric layer to expose the photosensitive portion of the semiconductor chip and adhering a light-permeable layer onto the light-permeable window, thereby permitting light to penetrate through the light-permeable layer to reach the photosensitive portion. Therefore, when fabricated with the method, the packaging substrate dispenses with conductive wires and dams and thus can be downsized. | 12-17-2009 |
20110057305 | PACKAGE SUBSTRATE HAVING SEMICONDUCTOR COMPONENT EMBEDDED THEREIN AND FABRICATION METHOD THEREOF - A package substrate having a semiconductor component embedded therein and a method of fabricating the same are provided, including: providing a semiconductor chip with electrode pads disposed on an active surface thereof; forming a passivation layer on the active surface and the electrode pads; forming on the passivation layer metal pads corresponding in position to the electrode pads, respectively, so as for the semiconductor chip to be fixed in position to an opening of a substrate body; forming a first dielectric layer on the semiconductor chip and the substrate body; forming dielectric layer openings by laser and preventing the electrode pads from being penetrated by the metal pads; removing the metal pads and the passivation layer in the dielectric layer openings so as to expose the electrode pads therefrom; and forming a first wiring layer on the first dielectric layer for electrical connection with the electrode pads. | 03-10-2011 |