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Kamigata
Teruhiko Kamigata, Kawasaki JP
| Patent application number | Description | Published |
|---|---|---|
| 20090217247 | Program performance analysis apparatus - To provide a program performance analysis apparatus that can present to a user whether tuning made to a program operating on a predetermined hardware is either good or bad, a performance information acquisition unit for obtaining the performance information of a program, a difference information generation unit for generating difference information by making a comparison between the performance information of a first program and that of a second program obtained by making a change to the first program, and a change evaluation unit for evaluating whether the change is either good or bad are comprised. | 08-27-2009 |
| 20100005275 | MULTIPROCESSING SYSTEM - A multiprocessing system includes a storage part that stores to a memory, a first operating system (OS) task set that is constituted by a combination of a first task and a first OS corresponding to the first task, the first task being designated by an execution instruction; and a task executing part that refers to the first OS task set stored to the memory, loads the OS constituting the first OS task set, and executes the first task designated by the execution instruction. | 01-07-2010 |
Yasuo Kamigata, Tsukuba JP
| Patent application number | Description | Published |
|---|---|---|
| 20110027994 | POLISHING SLURRY FOR CMP - A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring. | 02-03-2011 |
Yasuo Kamigata, Tsukuba-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100301265 | POLISHING SLURRY AND METHOD OF POLISHING - A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration. | 12-02-2010 |