Kai-Tai
Kai-Tai Chang, Kaohsiung City TW
Patent application number | Description | Published |
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20130122686 | Reverse Tone STI Formation - A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches. | 05-16-2013 |
20130187237 | STRUCTURE AND METHOD FOR TRANSISTOR WITH LINE END EXTENSION - The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; an isolation feature formed in the semiconductor substrate; a first active region and a second active region formed in the semiconductor substrate, wherein the first and second active regions extend in a first direction and are separated from each other by the isolation feature; and a dummy gate disposed on the isolation feature, wherein the dummy gate extends in the first direction to the first active region from one side and to the second active region from another side. | 07-25-2013 |
20140099771 | Reverse Tone STI Formation - A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches. | 04-10-2014 |
20140099779 | Reverse Tone STI Formation - A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches. | 04-10-2014 |
Kai-Tai Chang, Hsin-Chu TW
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20150115373 | STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE ACTIVE REGIONS - A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region. | 04-30-2015 |
Kai-Tai Lu, Fenyuan TW
Patent application number | Description | Published |
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20130014866 | METHOD FOR RECLAIMING HIGH EXPLOSIVE FROM WARHEAD BY MELTING-OUT IN SUPERCRITICAL FLUIDAANM LI; JIN-SHUHAACI FenyuanAACO TWAAGP LI; JIN-SHUH Fenyuan TWAANM Yeh; Taso-FaAACI FenyuanAACO TWAAGP Yeh; Taso-Fa Fenyuan TWAANM Lu; Kai-TaiAACI FenyuanAACO TWAAGP Lu; Kai-Tai Fenyuan TWAANM Chiu; Yung-HoAACI FenyuanAACO TWAAGP Chiu; Yung-Ho Fenyuan TWAANM Chen; Shuo-HsiuAACI FenyuanAACO TWAAGP Chen; Shuo-Hsiu Fenyuan TW - A method for the retraction of an explosive component from a high explosive, including the steps of loading a high explosive containing an explosive component into an extraction vessel. A supercritical fluid is supplied to the extraction vessel. The high explosive is contacting with the supercritical fluid at a temperature below the melting point of the explosive component and at a pressure sufficient to extract the explosive component. | 01-17-2013 |
20130338407 | METHOD FOR RECLAIMING TNT AND TNT-BASE HIGH EXPLOSIVE FROM WARHEAD BY STRIP DOWN IN SUPERCRITICAL FLUID - A method for the retraction of an explosive component from a high explosive, including the steps of loading a high explosive containing an explosive component into an striping down vessel; supplying a supercritical fluid to the striping down vessel; contacting the high explosive with the supercritical fluid at a temperature below the melting point of the explosive component and at a pressure sufficient to strip down the explosive component; and inducing a sonicating process on the striping down vessel simultaneously at a frequency of 2 MHz to 10 MHz. | 12-19-2013 |