Patent application number | Description | Published |
20080197337 | PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY MEMORY - The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application. | 08-21-2008 |
20080232159 | PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY MEMORY - The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application. | 09-25-2008 |
20080233681 | Design of BEOL Patterns to Reduce the Stresses on Structures Below Chip Bondpads - A semiconductor structure comprising a substrate including a first layer comprising a first material having a first modulus of elasticity; a first structure comprising a conductor and formed within the substrate, the first structure having an upper surface; and a stress diverting structure proximate the first structure and within the first layer, the stress diverting structure providing a low mechanical stress region at the upper surface of the first structure when a physical load is applied to the first structure, wherein said low mechanical stress region comprises stress values below the stress values in areas not protected by the stress diverting structure. The stress diverting structure comprises a second material having a second modulus of elasticity less than the first modulus of elasticity, the second material selectively formed over the upper surface of the first structure for diverting mechanical stress created by the physical load applied to the first structure. | 09-25-2008 |
20100308922 | Structures and Methods for Automated Tuning in Wide Range Multi-Band VCO with Internal Reset Concept - Circuits and methods for automated real-time tuning of wide range frequency/delay voltage controlled oscillators (VCO) using a reset mechanism, to account for run-time variations such as power supply, temperature, reference clock frequency and input slew drift etc is described. It finds extensive applications in wide range, multi frequency band phase and delay locked loops. In one embodiment, an automated Jump-Down band switching structure and method for use in VCOs with a plurality of frequency bands is described. This involves monitoring the VCO's analog control voltage signal until it reaches a predetermined lower limit, at which time band switching to an overlapping lower frequency band is triggered by an internally generated reset signal, while simultaneously charging the analog control voltage to a limit in a pre-determined range of the lower band, to avoid phase detector malfunctions in the PLL/DLL system at lower control voltages during band switch. | 12-09-2010 |
20120266116 | INTEGRATED MILLIMETER WAVE ANTENNA AND TRANSCEIVER ON A SUBSTRATE - A semiconductor chip integrating a transceiver, an antenna, and a receiver is provided. The transceiver is located on a front side of a semiconductor substrate. A through substrate via provides electrical connection between the transceiver and the receiver located on a backside of the semiconductor substrate. The antenna connected to the transceiver is located in a dielectric layer located on the front side of the substrate. The separation between the reflector plate and the antenna is about the quarter wavelength of millimeter waves, which enhances radiation efficiency of the antenna. An array of through substrate dielectric vias may be employed to reduce the effective dielectric constant of the material between the antenna and the reflector plate, thereby reducing the wavelength of the millimeter wave and enhance the radiation efficiency. A design structure for designing, manufacturing, or testing a design for such a semiconductor chip is also provided. | 10-18-2012 |
Patent application number | Description | Published |
20090316313 | DESIGN STRUCTURE FOR AN ON-CHIP HIGH FREQUENCY ELECTRO-STATIC DISCHARGE DEVICE - A design structure for an on-chip high frequency electro-static discharge device is described. In one embodiment, the electro-static discharge device comprises a substrate and multiple metal level layers disposed on the substrate. Each metal level comprises more than one electrode formed therein and more than one via connecting with some of the electrodes in adjacent metal levels. The device further includes a gap formed about one of the metal level layers, wherein the gap is hermetically sealed to provide electro-static discharge protection for the integrated circuit. | 12-24-2009 |
20090316314 | DESIGN STRUCTURE FOR AN ON-CHIP HIGH FREQUENCY ELECTRO-STATIC DISCHARGE DEVICE - A design structure for an on-chip high frequency electro-static discharge device is described. In one embodiment, the electro-static discharge structure comprises a first dielectric layer with more than one electrode formed therein. A second dielectric layer with more than one electrode formed therein is located above the first dielectric layer. At least one via connects the more than one electrode in the first dielectric layer with the more than one electrode in the second dielectric layer. A gap is formed through the first dielectric layer and the second dielectric layer, wherein the gap extends between two adjacent electrodes in both the first dielectric layer and the second dielectric layer. A third dielectric layer is disposed over the second dielectric layer, wherein the third dielectric layer hermetically seals the gap to provide electro-static discharge protection on the integrated circuit. | 12-24-2009 |
20090317970 | METHOD FOR FORMING AN ON-CHIP HIGH FREQUENCY ELECTRO-STATIC DISCHARGE DEVICE - A method for forming an on-chip high frequency electro-static discharge device on an integrated circuit is described. In one embodiment of the method, a capped first dielectric layer with more than one electrode formed therein is provided. A second dielectric layer is deposited over the capped first dielectric layer. A first hard mask dielectric layer is deposited over the second dielectric layer. A cavity trench is formed through the first hard mask dielectric layer and the second dielectric layer to the first dielectric layer, wherein the cavity trench is formed in the first dielectric layer between two adjacent electrodes. At least one via is formed through the second dielectric layer about the cavity trench. A metal trench is formed around each of the at least one via. A release opening is formed over the cavity trench. A third dielectric layer is deposited over the second dielectric layer, wherein the third dielectric layer hermetically seals the release opening to provide electro-static discharge protection. | 12-24-2009 |
20090317975 | METHOD FOR FORMING AN 0N-CHIP HIGH FREQUENCY ELECTRO-STATIC DISCHARGE DEVICE - A method for forming an on-chip high frequency electro-static discharge device is described. In one embodiment, a wafer with a multi-metal level wiring is provided and a hermetically sealed gap is formed therein to provide electro-static discharge protection for an integrated circuit. | 12-24-2009 |