Kai-Chieh Yang
Kai-Chieh Yang, Niaosong Township TW
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20100045625 | TOUCH PANEL AND SYSTEM FOR DISPLAYING IMAGES UTILIZING THE SAME - An embodiment of the invention provides a touch panel, which includes a substrate, a lower conductive layer overlaying the substrate, an insulating layer overlaying the lower conductive layer, and an upper conductive layer overlaying the insulating layer. The lower conductive layer includes a plurality of first conductive patterns including a plurality of first electrodes and a plurality of first dummy patterns, wherein the first dummy patterns are electrically insulated from the first conductive patterns. The upper conductive layer includes a plurality of second conductive patterns including a plurality of second electrodes respectively overlapping the first dummy patterns and a plurality of second dummy patterns, wherein the second dummy patterns are electrically insulated from the second conductive patterns and respectively overlapping the first electrodes. | 02-25-2010 |
20100073325 | DEVICE AND METHOD FOR DETECTING POSITION OF OBJECT AND IMAGE DISPLAY SYSTEM HAVING SUCH DEVICE - An object position detecting device includes a touch film, a first electrode set, a second electrode set, and a sensing and computing circuit. An object position detecting method includes the following steps. Firstly, an object is provided on the touch film. Then, first equivalent capacitance values of multiple first electrode groups of a first electrode set under the touch film are sensed, wherein each first electrode group includes n adjacent first electrodes that are parallel with and connected with each other. Then, second equivalent capacitance values of multiple second electrode groups of a second electrode set under the touch film are sensed, wherein each second electrode group includes m adjacent second electrodes that are parallel with and connected with each other. According to the first equivalent capacitance values and the second equivalent capacitance values, first position information of the object is calculated. | 03-25-2010 |
20100309161 | IMAGE DISPLAY SYSTEM AND METHOD FOR CONTROLLING A TOUCH PANEL THEREOF - The present invention provides an image display system including a display device. The display device further includes a capacitive touch panel and a power supply. In operation, the display device has a common electrode. The touch panel includes a sensing capacitor module and a sampling capacitor. The sensing capacitor module is connected to the common electrode, and has a variable capacitance. The sampling capacitor is selectively electrically connected to the sensing capacitor and the common electrode. | 12-09-2010 |
20100315375 | IMAGE DISPLAY SYSTEM AND METHOD FOR DETERMINING INPUT POSITION THEREON - The present invention provides an image display system including a capacitive touch panel. The touch panel includes a plurality of groups of capacitor, and each group includes a number of capacitor modules. The touch panel also includes a processing circuit, a first scanning circuit, and a second scanning circuit. The first scanning circuit scans in turn each group. The second scanning circuit scans in turn each capacitor module of a particular group of capacitor. Then the processing circuit generates an input signal associated with a position on the touch panel. | 12-16-2010 |
20100321311 | SYSTEM FOR DISPLAYING IMAGES - A system for displaying images including a touch display panel is provided. The touch display panel includes a first substrate. An electrode array is disposed on the first substrate, and the electrode array includes a first touch area. A first common electrode layer is disposed on the electrode array. A first dielectric layer is disposed between the electrode array and the first common electrode layer. | 12-23-2010 |
Kai-Chieh Yang, Chunan TW
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20090073135 | PROJECTING CAPACITIVE TOUCH SENSING DEVICE, DISPLAY PANEL, AND IMAGE DISPLAY SYSTEM - The present invention relates to a projecting capacitive touch sensing device, display panel, and image display system. The projecting capacitive touch sensing comprises an array of a plurality of sensing units, each sensing unit including: a first electrode made of a sensing material, at least one second electrode made of a sensing material and being disposed around the peripheral of the first electrode, at least one first sensing axis electrically connected to the first electrode, and at least one second sensing axis electrically connected to the second electrodes. The first electrode is quadrangle, while the second electrodes are triangular-shaped. The first electrode and the plurality of second electrodes are arranged to form a rectangular, and a non-sensing area is defined between the first electrode and the second electrodes. | 03-19-2009 |
20100117986 | CAPACITIVE TOUCH PANEL AND CAPACITANCE SENSING APPARATUS AND METHOD FOR THE SAME - A capacitive touch panel and capacitance sensing apparatus and method for the same are disclosed. The capacitive touch panel includes a plurality of electrodes, a multiplexer and a capacitance sensing apparatus. The multiplexer selectively connects one of the electrodes to the capacitance sensing apparatus. The capacitance sensing apparatus includes a reference voltage source and a differential comparator, where the reference voltage source generates a modified reference voltage according to noise on stray capacitance of the capacitive touch panel. In a discharging process, the comparator compares an input voltage at the selected electrode and the modified reference voltage. The capacitance change in the electrode can be precisely detected because the noise is eliminated by differential comparison. | 05-13-2010 |
Kai-Chieh Yang, Miao-Li County TW
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20100073324 | SENSING CIRCUIT DISCHARGE CONTROL METHOD AND DEVICE FOR TOUCH PANEL - A sensing circuit discharge control method and device for a touch panel are disclosed. A discharging duration of a current source in the sensing circuit of the touch panel is fine tuned in a digital control manner, so as to control the discharging amount of the sensing circuit without frequently adjusting the discharging current of the current source. By using the present invention, discharging time difference between a condition in which a touch event occurs and a condition in which no touch event occurs for each sensing circuit can approach the same. | 03-25-2010 |
Kai-Chieh Yang, Chu-Nan TW
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20090231298 | IMAGE DISPLAY SYSTEM WITH A TOUCH PANEL SENSING DEVICE - The present invention relates to an image display system with a touch panel sensing device, which applied in an electronic device, the touch panel sensing device including a substrate, a black matrix, a first planarizing layer, a conductive metal, vertical and horizontal electrode layers, a second planarization (PLN) layer, and a color resist layer disposed from top to bottom, wherein the vertical and horizontal electrode layers disposed between the first planarizing layer and the second PLN layer; therefore, by placing two perpendicularly electrode layers with the first planarizing layer on the same side, effectively to avoid chromatic aberration and reduce the thickness of the touch panel. | 09-17-2009 |
Kai-Chieh Yang, Kaohsiung County TW
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20080198054 | SYSTEM FOR DISPLAYING IMAGE AND DIGITAL-TO-ANALOG CONVERTING METHOD - A digital to analog converter is provided comprising a charge sharing circuit, a discharging circuit and a voltage boosting circuit. The charge sharing circuit sequentially receives first to (N-1)th bits of serial digital signals. The charge sharing circuit shares and stores charges between a first capacitor and a second capacitor according to a charging voltage, a ground voltage, a first clock signal and serial data signals. The discharging circuit discharges the charge sharing circuit according to a reset signal. After the voltage boosting circuit receive the (N-1)th digital signal, the charge boosting circuit whether to boost a first terminal and a second terminal of the second capacitor or not based on an Nth digital signal. After the voltage boosting circuit receives the Nth serial digital signal, the charge sharing circuit outputs an analog signal from the second terminal of the second capacitor. | 08-21-2008 |
20090122043 | SYSTEMS FOR DISPLAYING IMAGES - A system for displaying images is provided. The system comprises a reference voltage source, a digital-to-analog converter, a multiplier and a buffer. The reference voltage source outputs a voltage signal, wherein the magnitude of the voltage signal is 1/N of a driving voltage. The digital-to-analog converter converts the voltage signal to a first voltage. The multiplier receives and multiplies the first voltage by N to output the driving voltage. The buffer receives the driving voltage to drive a data line. | 05-14-2009 |
Kai-Chieh Yang, Zhubei City TW
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20130256796 | MOSFET WITH SLECTIVE DOPANT DEACTIVATION UNDERNEATH GATE - A method of fabricating a metal-oxide-semiconductor field-effect transistor (MOSFET) device on a substrate includes doping a channel region of the MOSFET device with dopants of a first type. A source and a drain are formed in the substrate with dopants of a second type. Selective dopant deactivation is performed in a region underneath a gate of the MOSFET device. | 10-03-2013 |
20140138763 | Semiconductor Integrated Device with Channel Region - A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device precursor. The semiconductor device precursor includes a substrate, source/drain regions on the substrate, dummy gate stacks separating the source/drain regions on the substrate and a doped region under the dummy gate stacks. The dummy gate stack is removed to form a gate trench. The doped region in the gate trench is recessed to form a channel trench. A channel layer is deposited in the channel trench to form a channel region and then a high-k (HK) dielectric layer and a metal gate (MG) are deposited on the channel region. | 05-22-2014 |
20160005817 | MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE - A metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a channel region comprising dopants of a first type. The MOSFET device further includes a gate dielectric over the channel region, and a gate over the gate dielectric. The MOSFET device further includes a source comprising dopants of a second type, and a drain comprising dopants of the second type, wherein the channel region is between the source and the drain. The MOSFET device further includes a deactivated region underneath the gate, wherein dopants within the deactivated region are deactivated. | 01-07-2016 |
Kai-Chieh Yang, Hsinchu County TW
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20150364560 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICAL STRUCTURE - According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure. | 12-17-2015 |
Kai-Chieh Yang, Kaohsiung City TW
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20160064541 | VERTICAL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A vertical transistor includes a source-channel-drain structure, a gate and a gate dielectric layer. The source-channel-drain structure includes a source, a drain over the source and a channel between the source and the drain. The gate surrounds a portion of the channel. The gate is configured to provide compressive strain substantially along an extending direction of the channel when the vertical transistor is an n-channel vertical transistor, or the gate is configured to provide tensile strain substantially along the extending direction of the channel when the vertical transistor is a p-channel vertical transistor. In some embodiments, the vertical transistor further includes an ILD configured to provide tensile strain substantially along an extending direction of the channel when the vertical transistor is an n-channel vertical transistor, or configured to provide compressive strain substantially along an extending direction of the channel when the vertical transistor is a p-channel vertical transistor. | 03-03-2016 |