Patent application number | Description | Published |
20140233297 | Graphene Ferroelectric Device and Opto-Electronic Control of Graphene Ferroelectric Memory Device - In accordance with an embodiment of the invention, there is provided a graphene ferroelectric device. The device comprises a graphene transistor channel and a ferroelectric gate of the graphene transistor channel, the ferroelectric gate comprising a linear polarization at a first applied gate voltage less than a threshold voltage, and a hysteretic polarization at a second applied gate voltage greater than the threshold voltage. The device may be configured to undergo optical switching of the graphene transistor channel between a high resistance state and a low resistance state in response to photoillumination of the device. | 08-21-2014 |
20150075602 | PHOTOVOLTAIC CELL WITH GRAPHENE-FERROELECTRIC ELECTRODE - A photovoltaic cell ( | 03-19-2015 |
20150085424 | SYNTHESIS OF THREE-DIMENSIONAL GRAPHENE FOAM: USE AS SUPERCAPACITORS - The invention relates to three-dimensional crystalline foams with high surface areas, high lithium capacity, and high conductivity for use as electrode materials and methods for their fabrication. In additional embodiments, the invention also relates to the use of three-dimensional crystalline foams as supercapacitors for improved charge and energy storage. | 03-26-2015 |