Patent application number | Description | Published |
20090189461 | INTEGRATED CIRCUIT INCLUDING A POWER MOS TRANSISTOR - An integrated circuit includes a first transistor having a first gate and a first source and a second transistor having a second gate and a second source. The integrated circuit includes a first source contact adjacent the second transistor and coupled to the first source and the second source. The integrated circuit includes a first bond wire coupled to the first source contact. | 07-30-2009 |
20100102845 | Proportional Regulation for Optimized Current Sensor Performance - An integrated circuit device comprises a first transistor having a gate coupled to an output of a first operational amplifier, a second transistor having a threshold voltage proportional to a threshold voltage of the first transistor, the second transistor having a gate coupled to an inverting input of a second operational amplifier, an output of the second operational amplifier coupled to an inverting input of the first operational amplifier, a first resistor coupled between the second transistor gate and the inverting input of the second operational amplifier, and a second resistor coupled between the output of the second operational amplifier and the inverting input of the second operational amplifier, a ratio of the second resistor to the first resistor selected based upon a ratio of a production distribution of a transistor source voltage offset to a production distribution of a transistor threshold voltage mismatch. | 04-29-2010 |
20100230764 | INTEGRATED CIRCUIT HAVING FIELD EFFECT TRANSISTORS AND MANUFACTURING METHOD - An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel. | 09-16-2010 |
20100270620 | System and Method for Constructing Shielded Seebeck Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 10-28-2010 |
20110037126 | SEMICONDUCTOR ARRANGEMENT INCLUDING A LOAD TRANSISTOR AND SENSE TRANSISTOR - A semiconductor arrangement including a load transistor and a sense transistor that are integrated in a semiconductor body. One embodiment provides a number of transistor cells integrated in the semiconductor body, each transistor cell including a first active transistor region. A number of first contact electrodes, each of the contact electrodes contacting the first active transistor regions through contact plugs. A second contact electrode contacts a first group of the first contact electrodes, but not contacting a second group of the first contact electrodes. The transistor cells being contacted by first contact electrodes of the first group form a load transistor, with the second electrode forming a load terminal of the load transistor. The transistor cells being contacted by first contact electrodes of the second group form a sense transistor. | 02-17-2011 |
20110147796 | SEMICONDUCTOR DEVICE WITH METAL CARRIER AND MANUFACTURING METHOD - Semiconductor device including a metal carrier substrate. Above the carrier substrate a first semiconductor layer of Al | 06-23-2011 |
20120175687 | System and Method for Manufacturing a Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 07-12-2012 |
20130307062 | Vertical Transistor Component - A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode. | 11-21-2013 |
20140120673 | INTEGRATED CIRCUIT HAVING FIELD EFFECT TRANSISTORS AND MANUFACTURING METHOD - An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel. | 05-01-2014 |
20140251408 | System and Method for Manufacturing a Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 09-11-2014 |
20140332877 | Semiconductor Device - A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line. | 11-13-2014 |
20140332881 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main surface of a semiconductor substrate, and gate electrodes of the second transistors are disposed in second trenches in the first main surface. The first and second trenches are disposed in parallel to each other. The semiconductor device further includes a first gate conductive line in contact with the gate electrodes in the first trenches, a second gate conductive line in contact with the gate electrodes in the second trenches, and a control element configured to control the potential applied to the second gate conductive line. | 11-13-2014 |
20150214357 | Vertical Transistor Component - A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode. | 07-30-2015 |
20150249020 | SEMICONDUCTOR DEVICE WITH METAL CARRIER AND MANUFACTURING METHOD - Semiconductor device including a metal carrier substrate. Above the carrier substrate a first semiconductor layer of Al | 09-03-2015 |
20150311195 | Integrated Transistor Structure Having a Power Transistor and a Bipolar Transistor - An integrated transistor structure includes an epitaxial layer on a semiconductor substrate, a power transistor formed in a first region of the epitaxial layer and having a drain region, a source region and a body region shorted to the source region, a bipolar transistor formed in a second region of the epitaxial layer spaced apart from the power transistor. A first trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the power transistor includes a gate electrode spaced apart from a channel region of the power transistor by an insulating material. A second trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor includes a trench electrode spaced apart from the epitaxial layer by an insulating material. The gate electrode, base and emitter of the bipolar transistor are connected to different contacts isolated from one another. | 10-29-2015 |
Patent application number | Description | Published |
20120007176 | High-Voltage Bipolar Transistor with Trench Field Plate - A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate. | 01-12-2012 |
20120012924 | Vertical Transistor Component - A vertical transistor component is produced by providing a semiconductor body with a first surface and a second surface, producing at least one gate contact electrode in a trench, the trench extending from the first surface through the semiconductor body to the second surface, and producing at least one gate electrode connected to the at least one gate contact electrode in the region of the first surface. | 01-19-2012 |
20120098083 | INTEGRATED CIRCUIT TECHNOLOGY WITH DIFFERENT DEVICE EPITAXIAL LAYERS - A semiconductor die includes a substrate, a first device region and a second device region. The first device region includes an epitaxial layer on the substrate and one or more semiconductor devices of a first type formed in the epitaxial layer of the first device region. The second device region is spaced apart from the first device region and includes an epitaxial layer on the substrate and one or more semiconductor devices of a second type formed in the epitaxial layer of the second device region. The epitaxial layer of the first device region is different than the epitaxial layer of the second device region so that the one or more semiconductor devices of the first type are formed in a different epitaxial layer than the one or more semiconductor devices of the second type. | 04-26-2012 |
20120126318 | Integrated Circuit Including Field Effect Transistor - An integrated circuit includes a semiconductor carrier including a first side and a second side opposite the first side. An FET is in a first area of the semiconductor carrier, and has a drain electrically coupled to a drain contact area at the first side and a source electrically coupled to a source contact area at the second side. First circuit elements are in a second area of the semiconductor carrier. The second area is electrically insulated from the semiconductor carrier surrounding the second area via a trench insulation extending through the semiconductor carrier from the first side to the second side. An interconnection level electrically interconnects the first circuit elements at the second side, and is electrically insulated from the source contact area in the entire second area via an insulating layer at the second side. A conductive pathway extends through the semiconductor carrier from the first side to the second side, and is electrically insulated from the semiconductor carrier surrounding the conductive pathway. At least one of the first circuit elements is electrically coupled to a contact area at the first side via the conductive pathway. | 05-24-2012 |
20130009252 | High Voltage Bipolar Transistor with Trench Field Plate - A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate. | 01-10-2013 |
20130187196 | Integrated Circuit Including Field Effect Transistor Structures with Gate and Field Electrodes and Methods for Manufacturing and Operating an Integrated Circuit - An integrated circuit includes a first and a second field effect transistor structure. The first field effect transistor structure includes a first gate electrode structure and a first field electrode structure. The second field effect transistor structure includes a second gate electrode structure and a second field electrode structure. The first and the second gate electrode structures are electrically separated from each other. The first and the second field electrode structures are separated from each other. | 07-25-2013 |
20150364524 | Power Semiconductor Device, Manufacturing Method Therefor, and Method for Operating the Power Semiconductor Device - A power semiconductor device includes a semiconductor body including a first surface, an edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area including at least one of several transistor structures connected in parallel and several diode structures connected in parallel, and a peripheral area arranged between the active area and the edge. The power semiconductor further device includes a plurality of word lines, a plurality of bit lines separated from the word lines, and a plurality of temperature sensors arranged on or at the first surface, wherein each of the temperature sensors is connected with one of the bit lines and one of the word lines or each of the temperature sensors is formed by a respective portion of one of the bit lines. | 12-17-2015 |
Patent application number | Description | Published |
20090211089 | Method of manufacturing a dual interface separable insulated connector with overmolded faraday cage - A dual interface separable insulated connector comprising a faraday cage molded over a bus bar for use in an electric power system and a method of manufacturing the same are provided. The faraday cage can be disposed within a semi-conductive shell. The configuration of the separable insulated connector can provide for easier bonding between the faraday cage and insulating material. Additionally, the configuration can eliminate or reduce the need to coat the bus bar with an adhesive agent and to smooth the metal bus bar to remove burrs, other irregularities, and sharp corners from the bar. Manufacturing the dual interface separable insulated connector can include molding a semi-conductive rubber faraday cage over a conductive bus bar, inserting the faraday cage into a shell, and injecting insulating material between the faraday cage and shell. | 08-27-2009 |
20090221163 | DUAL INTERFACE SEPARABLE INSULATED CONNECTOR WITH OVERMOLDED FARADAY CAGE - A dual interface separable insulated connector comprising a faraday cage molded over a bus bar for use in an electric power system and a method of manufacturing the same are provided. The faraday cage can be disposed within a semi-conductive shell. The configuration of the separable insulated connector can provide for easier bonding between the faraday cage and insulating material. Additionally, the configuration can eliminate or reduce the need to coat the bus bar with an adhesive agent and to smooth the metal bus bar to remove burrs, other irregularities, and sharp corners from the bar. Manufacturing the dual interface separable insulated connector can include molding a semi-conductive rubber faraday cage over a conductive bus bar, inserting the faraday cage into a shell, and injecting insulating material between the faraday cage and shell. | 09-03-2009 |
20090275223 | Dual Interface Separable Insulated Connector with Overmolded Faraday Cage - A dual interface separable insulated connector comprising a faraday cage molded over a bus bar for use in an electric power system and a method of manufacturing the same are provided. The faraday cage can be disposed within a semi-conductive shell. The configuration of the separable insulated connector can provide for easier bonding between the faraday cage and insulating material. Additionally, the configuration can eliminate or reduce the need to coat the bus bar with an adhesive agent and to smooth the metal bus bar to remove burrs, other irregularities, and sharp corners from the bar. Manufacturing the dual interface separable insulated connector can include molding a semi-conductive rubber faraday cage over a conductive bus bar, inserting the faraday cage into a shell, and injecting insulating material between the faraday cage and shell. | 11-05-2009 |
20120030944 | Method of Manufacturing a Dual Interface Separable Insulated Connector with Overmolded Faraday Cage - A dual interface separable insulated connector comprising a faraday cage molded over a bus bar for use in an electric power system and a method of manufacturing the same are provided. The faraday cage can be disposed within a semi-conductive shell. The configuration of the separable insulated connector can provide for easier bonding between the faraday cage and insulating material. Additionally, the configuration can eliminate or reduce the need to coat the bus bar with an adhesive agent and to smooth the metal bus bar to remove burrs, other irregularities, and sharp corners from the bar. Manufacturing the dual interface separable insulated connector can include molding a semi-conductive rubber faraday cage over a conductive bus bar, inserting the faraday cage into a shell, and injecting insulating material between the faraday cage and shell. | 02-09-2012 |
Patent application number | Description | Published |
20080236687 | Coupling Device For A Compressed Gas Cylinder - A coupling for a compressed gas cylinder ( | 10-02-2008 |
20120115119 | Artificial Lung - The invention relates to an artificial lung for simulating the stress by a user when testing a breathing apparatus, particularly a compressed air breathing apparatus, comprising a housing, which surrounds a pulmonary space for the breathing air and has a connection for supplying the breathing air to the breathing apparatus. In order to be able to variably control the volume flow for generating a certain respiration curve, the housing ( | 05-10-2012 |
20150075523 | COUPLING DEVICE FOR A BREATHING APPARATUS - A coupling device for a breathing apparatus, characterized in that a connecting device is inseparably connected to the regulator hose, and can be coupled with at least two couplers, each having a flow check valve, for connection to a breathing gas source. Other aspects are described and claimed. | 03-19-2015 |
20150202471 | PROTECTIVE HOOD - Described is a breathing system that covers a person's head with a flexible hood material. One aspect provides a protective hood, including: a flexible hood material having a closed top portion and a neck portion; a viewing window disposed within the flexible hood material; a breathing inlet disposed in the flexible hood material and providing for breathing air to enter into an interior of the protective hood; an exhalation valve disposed interior to the protective hood; and a sealing arrangement disposed at the neck portion of the flexible hood material; wherein at least a portion of expelled gas from the exhalation valve is released into an interior of the protective hood and rinses the interior of the protective hood. | 07-23-2015 |