Patent application number | Description | Published |
20130005808 | VASELINE-LIKE COMPOSITION AND COSMETIC - The present invention relates to a vaseline-like composition, comprising one type or two or more types of components selected from the following components (C), (D) and (E) at 5% by weight to 20% by weight, the following component (A) at 40% by weight to 90% by weight, and the following component (B) at 5% by weight to 50% by weight, and to a cosmetic containing the vaseline-like composition: component (A): one or more types of ester compounds selected from diisostearyl malate and diglyceryl triisostearate; component (B): a hydrocarbon wax having a melting point of 70° C. to 130° C.; component (C): a poly(12-hydroxystearic acid) having an average degree of polymerization of 3 to 20; component (D): a poly(12-hydroxystearic acid) derivative obtained by esterifying a poly(12-hydroxystearic acid) having an average degree of polymerization of 3 to 20 and a polyvalent alcohol having a valence of 5 or more; and, component (E): a dimer dilinoleic acid derivative. | 01-03-2013 |
20130029932 | COMPOSITION FOR EXTERNAL USE ON SKIN, COSMETIC, AND CLEANING AGENT - A composition for external use on skin that can be spread evenly on the skin, does not produce a liquid residue as a result of temperature change, and can suppress a feeling of sliminess of xanthan gum is provided. There are provided a composition for external use on skin containing 0.1% by mass to 10% by mass of a component (A) (a water-soluble polymer obtained by mixing agar with xanthan gum) and 30% by mass or more of a component (D) (water); the composition for external use on skin containing 0.5% by mass to 40% by mass of a divalent polyol as a component (B); the composition for external use on skin according to any one of the above compositions, which contains moisturizers as a component (C); and the composition for external use on skin according to any one of the above compositions, which contains oil as a component (E). | 01-31-2013 |
Patent application number | Description | Published |
20110247317 | CATALYST TEMPERATURE ESTIMATING DEVICE AND CATALYST TEMPERATURE ESTIMATING METHOD - A catalyst temperature estimating device that estimates the temperature of an upstream end of a catalyst for purifying exhaust gas of an internal combustion engine in an exhaust gas flow direction by executing a smoothing process for upstream end temperature estimation; the temperature of a downstream end of the catalyst in the exhaust gas flow direction by executing either a downstream end temperature estimation process using the estimated upstream end temperature with a smoothing process for downstream end temperature estimation; and calculates a smoothing coefficient for the estimated downstream end temperature used to smooth the estimated downstream end temperature based on the operation state of the internal combustion engine. | 10-13-2011 |
20110251779 | FUEL INJECTION CONTROL APPARATUS - A fuel injection control apparatus of the invention includes: a temperature acquisition portion that estimates the present temperature of a catalyst and the convergence temperature of the catalyst; an increase value calculation portion that calculates a base OT increase value that is an increase value for the fuel injection amount that a fuel injection valve provided in an internal combustion engine needs to inject, on the basis of the present temperature and the convergence temperature of the catalyst estimated by the temperature acquisition portion; a correction portion that calculates an OT increase correction-reflected value by correcting the base OT increase value on the basis of the present temperature and the convergence temperature if the present temperature is lower than the convergence temperature; and an increase value determination portion that selects one of the base OT increase value and the OT increase correction-reflected value as the OT increase value for the fuel injection amount that the fuel injection valve needs to inject, on the basis of the base OT increase value and the OT increase correction-reflected value. | 10-13-2011 |
20120014410 | CATALYST OVERHEAT PREVENTION APPARATUS - A catalyst overheat prevention apparatus has a temperature obtaining portion that estimates a convergence temperature of a catalyst provided in the exhaust system of an internal combustion engine and the present temperature of the catalyst. The catalyst overheat prevention apparatus also has a fuel increment calculation portion, a comparison portion, a correction portion, and a fuel increment setting portion, which are used to execute OT fuel increase control when the convergence temperature and present catalyst temperature obtained by the temperature obtaining portion are equal to or higher than an OT determination temperature. The catalyst overheat prevention apparatus also has a present temperature correction portion that corrects the present catalyst temperature to be equal to the OT determination temperature when the present catalyst temperature is equal to or higher than the OT determination temperature and the convergence temperature is equal to the OT determination temperature. | 01-19-2012 |
20120203445 | FUEL INJECTION CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE AND FUEL INJECTION CONTROL METHOD FOR INTERNAL COMBUSTION ENGINE - A fuel injection control for an internal combustion engine includes: estimating a convergence temperature of the exhaust gas catalytic converter; calculating an OTP boost value using the estimated convergence temperature; and estimating the convergence temperature on the assumption that the temperature decrement quantity of the exhaust gas catalytic converter which is caused by the power boosting is zero when both of the OTP boosting execution condition and the power boosting execution condition are met. | 08-09-2012 |
20120271534 | CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE - A control device for an internal combustion engine with a catalyst includes: an air-fuel ratio control unit varying a fuel amount supplied to the engine in accordance with a first variation amount set such that an air-fuel ratio of air-fuel mixture coincides with a target ratio; and an exhaust gas temperature control unit varying a fuel amount supplied to the engine in accordance with a second variation amount set to decrease an exhaust gas temperature. When air-fuel ratio control is being executed at a first time point and at least exhaust gas temperature control is executed during a period from the first time point or later to a third time point thereafter, the first and second variation amounts at a fourth time point in the period are set so as to be larger than or equal to the first variation amount at the first time point. | 10-25-2012 |
Patent application number | Description | Published |
20110276257 | NAVIGATION DEVICE, PROBE INFORMATION TRANSMISSION METHOD, COMPUTER-READABLE STORAGE MEDIUM THAT STORING PROBE INFORMATION TRANSMISSION PROGRAM, AND TRAFFIC INFORMATION GENERATION DEVICE - When a vehicle passes through an intersection that is stored in a collection target intersection database and for which direction-specific probe information is collected, a CPU of a navigation device generates a plurality of direction-specific probe information (entry link, exit link, section travel time, and the like) from a plurality of unit distance section information that is collected within a direction-specific traffic information acquisition section until the vehicle passes through the intersection, an entry link traveled before entering the intersection; and an exit link traveled after passing through the intersection, and transmits these to an information distribution center. | 11-10-2011 |
20120041669 | TRAFFIC INFORMATION MANAGEMENT DEVICE, TRAFFIC INFORMATION MANAGEMENT METHOD, AND TRAFFIC INFORMATION MANAGEMENT PROGRAM - Conventionally, different traffic information cannot be sent in accordance with an output reason of a request to send. According to the present invention, a request to send traffic information, which is output in response to an instruction given by a user operation or an automatically given instruction, is acquired, an output reason of the request to send is determined, and a communication unit is controlled so that the traffic information on different areas is sent depending on the cases where the output reason is the instruction given by the user operation or the automatically given instruction. | 02-16-2012 |
20120265428 | VEHICLE MOTION ESTIMATING DEVICE, VEHICLE MOTION ESTIMATING METHOD, AND VEHICLE MOTION ESTIMATING PROGRAM - According to the present invention, information which is associated with a motion of a vehicle can be acquired even in the case where no vehicle travels on a road. Motion information, which is associated with the motion of the vehicle on the road where the vehicle traveled, is acquired along with time information. Reference traffic information, which is traffic information on the road at a reference time which is specified by the time information, is acquired from a traffic information providing device which constantly provides the traffic information. A correlation between the motion information and the reference traffic information is specified. Furthermore, estimated motion information, which indicates an estimated motion of the vechicle on the road at an estimate time when the motion is estimated, is acquired based on estimating source traffic information at the estimate time and the correlation, the estimating source traffic information being provided as the traffic information of the estimating source from the traffic information providing device in the case where no motion information is acquired at the estimate time. | 10-18-2012 |
Patent application number | Description | Published |
20120068663 | POWER SOURCE DEVICE - A power control device for a vehicle includes a first battery, a second battery, the voltage of which is lower than the voltage of the first battery, and a transformer. The transformer includes a primary coil, to which an alternating-current power source is connected, a first secondary coil, to which the first battery is connected, and at least one second secondary coil, to which the second battery is connected. A rectification circuit is located between the second secondary coil and the second battery. A voltage adjustment circuit is located between the rectification circuit and the second battery. A control section charges the first battery using the alternating current power source, and, simultaneously supplies electrical power to the second battery. | 03-22-2012 |
20140151106 | WIRING BOARD AND METHOD FOR MANUFACTURING WIRING BOARD - An electrically conductive path is configured from a first copper plate, a second copper plate, and solder. The first copper plate has a first bent section extended from a first joining section joined to an electrically insulative board and bent toward the rear surface of the electrically insulative board. The second copper plate has a second bent section which is extended from a second joining section joined to the electrically insulative board, is bent toward the front surface of the electrically insulative board, and is disposed so as to cover, together with the first bent section, the inner wall surface of a base-material through-hole. Through-holes are provided in the portions of the second copper plate which face the inside of the base-material through-hole. Solder is filled between the first bent section and the second bent section. | 06-05-2014 |
Patent application number | Description | Published |
20120074472 | Power Semiconductor Device Having Gate Electrode Coupling Portions for Etchant Control - A general insulated gate power semiconductor active element with many gate electrodes arranged in parallel has a laminated structure including a barrier metal film and a thick aluminum electrode film formed over the gate electrodes via an interlayer insulating film. When the aluminum electrode film is embedded in between the gate electrodes in parallel, voids may be generated with the electrodes. Such voids allow the etchant to penetrate in wet etching, which may promote the etching up to a part of the electrode film in an active cell region which is to be left. Thus, an insulated gate power semiconductor device is provided to include gate electrodes protruding outward from the inside of the active cell region, and a gate electrode coupling portion for coupling the gate electrodes outside the active cell region. The gate electrode coupling portion is covered with a metal electrode covering the active cell region. | 03-29-2012 |
20120299056 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Techniques capable of improving the yield of IGBTs capable of reducing steady loss, turn-off time, and turn-off loss are provided. Upon formation of openings in an interlayer insulting film formed on a main surface of a substrate, etching of a laminated insulating film of a PSG film and an SOG film and a silicon oxide film is once stopped at a silicon nitride film. Then, the silicon nitride film and the silicon oxide film are sequentially etched to form the openings. As a result, the openings are prevented from penetrating through an n-type source layer and a p | 11-29-2012 |
20140217496 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To realize a semiconductor device having a power MOSFET satisfying both a low conduction resistance and a high junction breakdown voltage by a simple and easy manufacturing method. Over an n-type substrate, a p-type epitaxial layer of a low concentration is formed, and, in an active part, a plurality of active regions is defined by a plurality of trenches that is formed in the epitaxial layer and extends in a first direction with first intervals in a second direction orthogonal to the first direction. In the epitaxial layer between the adjacent trenches, an n-type diffusion region that functions as a drain offset layer is formed, and, in the epitaxial layer between a side wall of the trench and the n-type diffusion region, a p-type diffusion region connected with a channel region (the p-type diffusion region) is formed, to constitute a super junction structure. Further, by forming an n-type diffusion region in the epitaxial layer, having a prescribed width from a side wall of a trench lying in the end part of the active part toward an outer periphery part, to achieve the improvement of a drain breakdown voltage. | 08-07-2014 |
20140235020 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Techniques capable of improving the yield of IGBTs capable of reducing steady loss, turn-off time, and turn-off loss are provided. Upon formation of openings in an interlayer insulting film formed on a main surface of a substrate, etching of a laminated insulating film of a PSG film and an SOG film and a silicon oxide film is once stopped at a silicon nitride film. Then, the silicon nitride film and the silicon oxide film are sequentially etched to form the openings. As a result, the openings are prevented from penetrating through an n-type source layer and a p | 08-21-2014 |
20150145025 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends. | 05-28-2015 |
20150179762 | Power Semiconductor Device Having Gate Electrode Coupling Portions For Etchant Control - A general insulated gate power semiconductor active element with many gate electrodes arranged in parallel has a laminated structure including a barrier metal film and a thick aluminum electrode film formed over the gate electrodes via an interlayer insulating film. When the aluminum electrode film is embedded in between the gate electrodes in parallel, voids may be generated with the electrodes. Such voids allow the etchant to penetrate in wet etching, which may promote the etching up to a part of the electrode film in an active cell region which is to be left. Thus, an insulated gate power semiconductor device is provided to include gate electrodes protruding outward from the inside of the active cell region, and a gate electrode coupling portion for coupling the gate electrodes outside the active cell region. The gate electrode coupling portion is covered with a metal electrode covering the active cell region. | 06-25-2015 |
20150380487 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends. | 12-31-2015 |
20160043206 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An improvement is achieved in the performance of a semiconductor device. Over the main surface of a semiconductor substrate for the n-type base of an IGBT, an insulating layer is formed. In a trench of the insulating layer, an n-type semiconductor layer is formed over the semiconductor substrate and, on both sides of the semiconductor layer, gate electrodes are formed via gate insulating films. In an upper portion of the semiconductor layer, a p-type semiconductor region for a p-type base and an n | 02-11-2016 |
20160079352 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To realize a semiconductor device having a power MOSFET satisfying both a low conduction resistance and a high junction breakdown voltage by a simple and easy manufacturing method. Over an n-type substrate, a p-type epitaxial layer of a low concentration is formed, and, in an active part, a plurality of active regions is defined by a plurality of trenches that is formed in the epitaxial layer and extends in a first direction with first intervals in a second direction orthogonal to the first direction. In the epitaxial layer between the adjacent trenches, an n-type diffusion region that functions as a drain offset layer is formed, and, in the epitaxial layer between a side wall of the trench and the n-type diffusion region, a p-type diffusion region connected with a channel region (the p-type diffusion region) is formed, to constitute a super junction structure. Further, by forming an n-type diffusion region in the epitaxial layer, having a prescribed width from a side wall of a trench lying in the end part of the active part toward an outer periphery part, to achieve the improvement of a drain breakdown voltage. | 03-17-2016 |
Patent application number | Description | Published |
20130258147 | IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING METHOD - An image processing apparatus obtains moving image data having a pixel array of a Bayer structure, transmits the obtained moving image data in accordance with a transmission method of transmitting image data having a pixel array different from the Bayer structure and auxiliary data indicating transparency of a plurality of pieces of color data included in the image data by using a plurality of channels, and controls image data of predetermined one of a plurality of colors where the number of pixels corresponding to the predetermined color is larger than that of other color of the plurality of colors, by using a channel for transmitting the auxiliary data. | 10-03-2013 |
20130258163 | IMAGE PROCESSING APPARATUS AND CONTROL METHOD THEREFOR - An image processing apparatus obtains information of an effective pixel of an image pickup element and information of a pixel on the periphery thereof, sets a position where image data of the peripheral pixel is multiplexed in accordance with a transmission method, generates a data stream by multiplexing image data of the effective pixel and the image data of the peripheral pixel in accordance with the set multiplexing position and the transmission method, and multiplexes information on the set multiplexing position and information on the peripheral pixel area to the data stream. | 10-03-2013 |
20150095400 | INFORMATION PROCESSING APPARATUS THAT UPLOADS IMAGES HELD BY A PLURALITY OF DEVICES TO SERVERS SET ON A DEVICE-BY-DEVICE BASIS, METHOD OF CONTROLLING THE SAME, AND STORAGE MEDIUM - An information processing apparatus capable of reducing the burden of user's operation for sharing uploaded images, in a case where image upload destinations set by the users using their own devices are different. The apparatus includes a device detection section that detects a device that holds image information, a device communication section that communicates with the detected device, and a server communication that communicates with a plurality of servers via a communication network. Server information indicative of an image upload destination set for each detected device is acquired via the device communication section. Image information held by each device is acquired via the device communication section. The acquired image information is uploaded to the servers corresponding to the server information. | 04-02-2015 |
Patent application number | Description | Published |
20140263167 | POLISHING COMPOSITION AND POLISHING METHOD USING SAME, AND SUBSTRATE MANUFACTURING METHOD - Provided is a polishing composition to be used for polishing an object including a conductor layer and an electrically conductive material layer that is in contact with the conductor layer. In a state in which the positive electrode and the negative electrode of an electrometer are connected to the electrically conductive material layer and the conductor layer, respectively, in the polishing composition at ordinary temperature, the current flowing from the positive electrode to the negative electrode has a positive value or is zero when the electrically conductive material layer and the conductor layer are polished. The polishing composition preferably contains a nitrogen atom-containing compound, a sulfur atom-containing compound, or a phosphorus atom-containing compound as an additive to control the value of the current to positive or zero. | 09-18-2014 |
20140349484 | POLISHING COMPOSITION - A polishing composition of the present invention is to be used for polishing an object including a metal portion or an interlayer insulation film. The polishing composition contains silica on which an organic acid, such as a sulfonic acid and a carboxylic acid, is immobilized and an oxidizing agent. | 11-27-2014 |
20150232705 | POLISHING COMPOSITION - To provide a polishing composition, in which a high polishing rate for a barrier layer and an insulation film can sufficiently be maintained, a polishing rate of a low dielectric material can sufficiently be suppressed, and aggregation of abrasive grains can be prevented. The invention is a polishing composition to be used for an application of polishing a polishing object having a barrier layer, a metal wiring layer, and an insulation film, comprising an oxidizing agent, and a nonionic compound having a weight average molecular weight of 1,000 or less. | 08-20-2015 |