Ka Young
Ka Young Cho, Chungcheoungbuk-Do KR
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20110158000 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - A semiconductor memory device includes a voltage generator configured to supply a program voltage, a sub-verification voltage, or a target verification voltage to memory cells selected during a program operation, page buffers configured to latch first data according to results from comparing threshold voltages of the selected memory cells with the sub-verification voltage and latch second data according to results from comparing the threshold voltages of the memory cells with the target verification voltage, a sub-pass check circuit configured to output a sub-pass signal in response to the first data outputted from the page buffers, a main pass check circuit configured to output a main pass signal in response to the second data outputted from the page buffers, and a control circuit configured to control whether the voltage generator supplies the sub-verification voltage and the target verification voltage in response to the sub-pass signal and the main pass signal. | 06-30-2011 |
Ka Young Kim, Gyeonggi-Do KR
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20150228336 | RESISTIVE MEMORY APPARATUS AND OPERATION METHOD THEREOF - A resistive memory apparatus includes a memory region including a plurality of resistive memory cells, and a controller suitable for storing a threshold number of write operations according to a data storage material of the resistive memory cells, counting numbers of write operations for the respective resistive memory cells as a write operation is performed for the memory region, and performing interrupt control when a memory cell that reaches the threshold number of write operations is detected. | 08-13-2015 |
Ka Young Kim, Daejeon KR
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20160043409 | Lithium Air Battery - Provided is a lithium air battery including an anode occluding and releasing lithium ion; a cathode including a compression-molded body of a catalyst supported carbon body; and a lithium ion conductive electrolyte positioned between the anode and the cathode. More particularly, there is provided a lithium air battery capable of having improved durability, decreasing internal resistance, and having excellent charge and discharge efficiency. | 02-11-2016 |
Ka Young Lee, Seoul KR
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20100251936 | METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM - A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method. | 10-07-2010 |
20120231607 | METHOD FOR FORMING A SILICON LAYER ON ANY SUBSTRATE USING LIGHT IRRADIATION - A method for forming a silicon layer according to inventive concept comprises: preparing an SOI substrate; applying an etchant or vapor of the etchant to the SOI substrate; and irradiating a light to the SOI substrate. | 09-13-2012 |
20140000480 | METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM | 01-02-2014 |