| Patent application number | Description | Published |
|---|
| 20090042356 | Peeling Method and Method of Manufacturing Semiconductor Device - There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer ( | 02-12-2009 |
| 20090239320 | SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer | 09-24-2009 |
| 20090291516 | Peeling Method and Method of Manufacturing Semiconductor Device - There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer ( | 11-26-2009 |
| 20090302339 | Light Emitting Device, Semiconductor Device, and Method of Fabricating the Devices - A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate. | 12-10-2009 |
| 20100148179 | Semiconductor Device and Method of Manufacturing the Same - A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate ( | 06-17-2010 |
| 20100200871 | Self-Light-Emitting Device and Method of Manufacturing the Same - Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole | 08-12-2010 |
| 20110101852 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a bright and highly reliable light-emitting device. An anode ( | 05-05-2011 |
