| Patent application number | Description | Published |
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| 20100069780 | METHOD AND APPARATUS FOR USING BIOPOTENTIALS FOR SIMULTANEOUS MULTIPLE CONTROL FUNCTIONS IN COMPUTER SYSTEMS - A biosignal-computer-interface apparatus and method. The apparatus includes one or more devices for generating biosignals based on at least one physiological parameter of an individual, and a computer-interface device capable of performing multiple tasks, including converting the biosignals into at least one input signal, establishing a scale encompassing different levels of the input signal, multiplying the input signal into parallel control channels, dividing the scale into multiple zones for each of the parallel control channels, assigning computer commands to each individual zone of the multiple zones, and generating the computer command assigned to at least one of the individual zones if the level of the input signal is within the at least one individual zone. The individual zones can be the same or different among the parallel control channels. | 03-18-2010 |
| 20110301488 | METHOD AND APPARATUS FOR USING BIOPOTENTIALS FOR SIMULTANEOUS MULTIPLE CONTROL FUNCTIONS IN COMPUTER SYSTEMS - A biosignal-computer-interface apparatus and method. The apparatus includes one or more devices for generating biosignals based on at least one physiological parameter of an individual, and a computer-interface device capable of performing multiple tasks, including converting the biosignals into at least one input signal, establishing a scale encompassing different levels of the input signal, multiplying the input signal into parallel control channels, dividing the scale into multiple zones for each of the parallel control channels, assigning computer commands to each individual zone of the multiple zones, and generating the computer command assigned to at least one of the individual zones if the level of the input signal is within the at least one individual zone. The individual zones can be the same or different among the parallel control channels. | 12-08-2011 |
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| 20080227156 | NUCLEIC ACIDS ENCODING NEUTRALIZING GDF8 EPITOPE-BASED PEPTIDES AND FUSION PROTEINS - The invention provides new, specific antigenic peptides from the protein GDF8. The invention also provides fusion proteins comprising the new peptides, immunogens and vaccines based on the new peptides and/or fusion proteins, antibodies that specifically bind to the new peptides of GDF8, and methods of treating animals in order to modulate the activity of GDF8, employing vaccines or antibodies according to the invention. | 09-18-2008 |
| 20090208522 | Neutralizing Epitope-Based Growth Enhancing Vaccine - The invention provides a fusion protein comprising a plant virus coat protein and a GDF8 peptide domain, or antigenic fragment of the GDF8 peptide domain. Plant virus vectors expressing the fusion protein and methods of using these vectors are also provided. | 08-20-2009 |
| 20090311282 | NEUTRALIZING GDF8 EPITOPE-BASED GROWTH ENHANCING VACCINE - The invention provides new, specific antigenic peptides from the protein GDF8. The invention also provides fusion proteins comprising the new peptides, immunogens and vaccines based on the new peptides and/or fusion proteins, antibodies that specifically bind to the new peptides of GDF8, and methods of treating animals in order to modulate the activity of GDF8, employing vaccines or antibodies according to the invention. | 12-17-2009 |
| Patent application number | Description | Published |
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| 20080220617 | Deep STI trench and SOI undercut enabling STI oxide stressor - A method for imparting stress to the channel region of a transistor is provided. In accordance with the method, a semiconductor layer ( | 09-11-2008 |
| 20080272411 | SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD - A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile. | 11-06-2008 |
| 20090017587 | Disposable organic spacers - A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode ( | 01-15-2009 |
| 20090075434 | METHOD OF REMOVING DEFECTS FROM A DIELECTRIC MATERIAL IN A SEMICONDUCTOR - A method of forming a semiconductor device includes forming a high dielectric constant material over a semiconductor substrate, forming a conductive material over the high dielectric constant material, and performing an anneal in a non-oxidizing ambient using ultraviolet radiation to remove defects in the high dielectric constant material. Examples of a non-oxidizing ambient include for example nitrogen, deuterium, a deuterated forming gas (N | 03-19-2009 |
| 20090191708 | METHOD FOR FORMING A THROUGH SILICON VIA LAYOUT - A method for forming a TSV layout reduces recessing in a silicon nitride layer caused by forming the TSV through a silicon nitride layer having an intrinsic tensile stress or neutral stress. In one embodiment, the method includes compensating for the tensile stressed silicon nitride layer by either moving the TSV location to an area of intrinsic tensile stress, or by substituting a compressively stressed silicon nitride layer in the area of the TSV. The compressively stressed silicon nitride layer experiences less recessing during a TSV etch process than a silicon nitride layer under tensile stress. The smaller recesses are more readily filled when a dielectric liner is applied to the sidewalls of the TSV, reducing the possibility of voids being formed. Also, the smaller recesses require smaller exclusion zones, resulting in less surface area of an integrated circuit being used for the TSVs, as well as greater reliability and improved yields. | 07-30-2009 |
| 20110210401 | MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE - A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate ( | 09-01-2011 |
| Patent application number | Description | Published |
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| 20080237032 | METHOD OF APPLYING A BURNABLE POISON ONTO THE EXTERIOR OF NUCLEAR ROD CLADDING - A method for applying a burnable poison onto the cladding of a nuclear fuel rod ( | 10-02-2008 |
| 20090150093 | EDDY CURRENT DATA INTERPOLATION/EXTRAPOLATION - A method of synthesizing nondestructive examination data of a component that combines data sets acquired at least two different frequencies. At least one of the data sets is interpolated or extrapolated to the equivalent of data acquired at one of the other frequencies employing a third, reference set of eddy current inspection data that is acquired at each of the inspection frequencies being combined. | 06-11-2009 |
| 20100040186 | FUEL ROD INTERNAL PRESSURE MEASUREMENT - A method for determining a leaking nuclear fuel rod that remotely measures the internal pressure in the plenum region of the fuel rod by remotely measuring the thermal response of the rod when a localized heating is imposed on the outside of the rod in the plenum region. The temperature of the cladding at two symmetrically spaced points on either side of the location where the heating is imposed is remotely monitored as a function of time and compared to a standard to determine the internal pressure of the plenum. | 02-18-2010 |
| 20100071470 | STEAM GENERATOR NONDESTRUCTIVE EXAMINATION METHOD - A method of examining a steam generator heat exchange tube from the outside surface employing ultrasonic nondestructive inspection techniques. An ultrasonic transducer contacts the outside surface of the tube and transmits a pseudo helical Lamb wave into the wall of the tube chosen to have a mode that does not significantly interact with water in the tube. The reflected waves are then analyzed for changes in modes to identify defects in the wall of the tube. | 03-25-2010 |
| 20110002434 | METHOD OF APPLYING A BURNABLE POISON ONTO THE EXTERIOR OF NUCLEAR FUEL ROD CLADDING - An article made by applying a burnable poison onto the cladding of a nuclear fuel rod, which involves providing a nuclear fuel rod and at least one application device, rotating the nuclear fuel rod, optionally removing one or more oxides and/or surface deposits on the outer surface of the nuclear fuel rod by spraying an abrasive material onto the nuclear fuel rod via the application device while adjusting the position of the application device in relation to the nuclear fuel rod, and applying burnable poison particles onto the outer surface of the nuclear fuel rod by spraying the burnable poison onto the nuclear fuel rod via the application device while adjusting the position of the application device in relation to the nuclear fuel rod, where the burnable poison particles are applied at a velocity sufficient to cause adhesion to the outer surface of the cladding. | 01-06-2011 |
| 20110148402 | INSPECTION MODE SWITCHING CIRCUIT - An eddy current probe testing apparatus structured to operate concurrently in a driver pick-up mode and said impedance mode is provided. The eddy current probe has two coils. The eddy current probe testing apparatus also includes a signal producing device, an output device, and a switch assembly. The switch assembly is structured to switch how an input signal from the signal producing device is provided to the two coils. | 06-23-2011 |
