Patent application number | Description | Published |
20100178609 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND - A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of an acid, and an acid generator component (B), wherein the base component (A) includes a polymeric compound (A0) containing a structural unit (a0) represented by the general formula (a0-1) shown below: | 07-15-2010 |
20100233626 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0-1) (R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R | 09-16-2010 |
20110269076 | SURFACE MODIFYING MATERIAL, METHOD OF FORMING RESIST PATTERN, AND METHOD OF FORMING PATTERN - A surface modifying material for forming a surface modifying layer provided between a substrate and a resist film, the surface modifying material including an epoxy resin having a weight average molecular weight of 1,000 to 50,000;
| 11-03-2011 |
20120135347 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND COMPOUND - There are provided a resist composition, a method of forming a resist pattern using the resist composition, a novel polymeric compound and a compound useful as a monomer for the polymeric compound,
| 05-31-2012 |
20120148953 | Resist composition, and method of forming resist pattern - A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In formula (a5-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group, X represents single bond or divalent linking group, W represents a cyclic alkylene group which may include an oxygen atom at arbitrary position, each of R | 06-14-2012 |
20120183900 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND - A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In the formula (a5-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; each of R | 07-19-2012 |
20120308928 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND METHOD OF PRODUCING THE SAME - A resist composition including a base component (A) that exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit (a1)) containing an acid decomposable group that exhibits increased polarity under action of acid, and the amount of the structural unit (a0) is less than 50 mol %, | 12-06-2012 |
20140205956 | METHOD FOR FORMING RESIST PATTERN - A method for forming a negative type resist pattern having a high residual film rate of exposed areas of a resist film by heating an exposed resist film and subjecting it to patterning by negative type development with a developing solution containing an organic solvent, in which a resist composition containing a high-molecular weight compound having a constituent unit represented by a particular general formula. | 07-24-2014 |
20140272727 | METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A method of producing a copolymer, including copolymerizing a monomer (am0) containing a partial structure represented by formula (am0-1) shown below, a monomer (am1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a monomer (am5) containing an —SO | 09-18-2014 |
20140287362 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD - A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya | 09-25-2014 |
20140356787 | RESIST COMPOSITION, COMPOUND, POLYMERIC COMPOUND AND METHOD OF FORMING RESIST PATTERN - A resist composition comprising a compound (m0) (wherein Rb | 12-04-2014 |
20140363772 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN - A resist composition including a high-molecular weight compound having a constituent unit represented by general formula (a0-1), a constituent unit (a1) containing a group containing a monocyclic group or a chain group among acid decomposable groups whose polarity increases by action of acid, a constituent unit (a1′) containing a group containing a polycyclic group among acid decomposable groups whose polarity increases by the action of an acid, and a constituent unit (a2) containing a lactone-containing monocyclic group, with a proportion of the constituent unit (a1) being equal to a proportion of the constituent unit (a1′) or more; and a method for forming a resist pattern using the resist composition. | 12-11-2014 |