| Patent application number | Description | Published |
|---|
| 20080265278 | Semiconductor Device and Semiconductor Integrated Circuit Device for Driving Plasma Display Using the Semiconductor Device - A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density. | 10-30-2008 |
| 20080265331 | Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same - In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm | 10-30-2008 |
| 20090015573 | Plasma display apparatus and semiconductor device - A plasma display apparatus having a plurality of display cells for prolonging the luminous brightness lifetime in the single-sided drive mode has a first sustaining electrode, a second sustaining electrode connected to reference potential and cooperating with the first sustaining electrode to perform sustain discharge through a discharge space of a display cell, and an address electrode, an electrical capacitance set up between the second sustaining electrode and the discharge space is larger than that set up between the first sustaining electrode and the discharge space. | 01-15-2009 |
| 20090315072 | Semiconductor Device, Semiconductor Integrated Circuit Equipment Using the Same for Driving Plasma Display, and Plasma Display Unit - In a lateral IGBT structure equipped with an emitter terminal, comprising two or more second conductivity type base layers, per one collector terminal, the second conductivity type base layer in the emitter region is covered by a first conductivity type layer which has a higher impurity concentration than the drift layer, and width L1 of the gate electrode located between two adjacent emitters is 4 μm or less, or in addition to that, width L2 of the opening for leading out an emitter electrode located between two adjacent gate electrodes is 3 μm or less. | 12-24-2009 |
| 20100165681 | SEMICONDUCTOR DEVICE AND POWER CONVERTER USING THE SAME - In a driving circuit, for controlling the turning on and off of a main semiconductor switching device of an insulated gate type, in an insulated gate semiconductor switching device for electric power conversion, bipolar semiconductor devices of an insulated gate control type, particularly insulated gate bipolar transistors (IGBTs) are used at the output stage of a circuit that controls the gate voltage of the main semiconductor switching device. | 07-01-2010 |
| 20100219448 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR DRIVING PLASMA DISPLAY USING THE SEMICONDUCTOR DEVICE - The output circuit uses an IGBT incorporating a normal latch-up operation measure and the ESD clamp circuit uses an IGBT that can more easily latch up than the output circuit device which has the latch-up prevention layer lowered in impurity density or removed. | 09-02-2010 |
| 20100327315 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR USE OF DRIVING PLASMA DISPLAY WITH USING SAME, AND PLASMA DISPLAY APPARATUS - A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density. | 12-30-2010 |
| 20110227626 | LEVEL SHIFT CIRCUIT AND POWER CONVERSION UNIT - In a level shift circuit, when a power-source voltage variation dV/dt of a high voltage side occurs and influences on a logic level of a circuit, the passing through of a malfunction signal is masked and prevented in the first and second logic circuits, by a signal from a time-constant generation circuit or a portion where a power voltage variation occurs in advance, by utilizing the fact that this variation occurs both at a set side and a reset side. When the power source voltage variation dV/dt is generated at a high voltage side, sufficient allowance in the timing of this masking prevents an erroneous signal from being transmitted to a flip-flop, and a control signal is transmitted from a low voltage side circuit not giving malfunction to a high voltage side circuit, even when there is a production variation in each element in semiconductor processes. | 09-22-2011 |
