Patent application number | Description | Published |
20080225133 | CMOS APS with stacked avalanche multiplication layer and low voltage readout electronics - An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components. | 09-18-2008 |
20080293818 | Regulator of Physiological Function of Ghrelin and Use Thereof - A regulator for regulating physiological functions, such as activity of increasing an intracellular calcium ion concentration, activity of promoting growth hormone secretion, activity of promoting eating, regulatory activity relating to fat accumulation, activity of ameliorating heart function and activity of stimulating gastric acid secretion, of ghrelin, which regulator comprises a fatty acid of carbon number 2-35 or its derivative, and use thereof. | 11-27-2008 |
20090002536 | Biasing scheme for large format CMOS active pixel sensors - An image sensor includes circuitry compensating for voltage drops in a V | 01-01-2009 |
20090180015 | WIDE DYNAMIC RANGE PINNED PHOTODIODE ACTIVE PIXEL SENSOR (APS) - An image apparatus and method is disclosed for extending the dynamic range of an image sensor. A first linear pixel circuit produces a first pixel output signal based on charge integration by a first photo-conversion device over a first integration period. A second linear pixel circuit produces a second pixel output signal based on charge integration by a second photo-conversion device over a second integration period, where the second integration period is shorter than the first integration period. A sample-and-hold circuit captures signals representing the first and second pixel output signals. | 07-16-2009 |
20090200455 | CMOS APS WITH STACKED AVALANCHE MULTIPLICATION LAYER AND LOW VOLTAGE READOUT ELECTRONICS - An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components. | 08-13-2009 |
20090303368 | IMAGE SENSOR WITH ON-CHIP SEMI-COLUMN-PARALLEL PIPELINE ADCS - An imaging device with a semi-column-parallel pipeline analog-to-digital converter architecture. The semi-column-parallel pipeline architecture allows multiple column output lines to share an analog-to-digital converter. Analog-to-digital conversions are performed in a pipelined manner to reduce the conversion time, which results in shorter row times and increased frames rate and data throughput. The architecture also enhances the pitch of the analog-to-digital converters, which allows high performance, high resolution analog-to-digital converters to be used. As such, semi-column-parallel pipeline architecture overcomes the shortcomings of the typical serial and column-parallel architectures. | 12-10-2009 |
20120103675 | LAMINATED ELECTRONIC DEVICES AND METHOD OF MANUFACTURING SAME - A laminated electronic device comprises two or more wiring layers including a first wiring layer and a second wiring layer, an insulating layer interposed between the first wiring layer and second wiring layer, and a through conductor extending through the insulating layer for electrically connecting a first conductor disposed on the first wiring layer to a second conductor disposed on the second wiring layer. The through conductor includes divergent sections at both ends, which have a diameter gradually increased toward the first conductor or second conductor. | 05-03-2012 |
20120193515 | IMAGERS WITH DEPTH SENSING CAPABILITIES - An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns. | 08-02-2012 |
20140022687 | ANTISTATIC DEVICE - To provide an antistatic device having a low capacitance, good discharge characteristics, and small variations in the discharge characteristics. In a so-called gap-type antistatic device in which a space between a pair of opposing electrodes is filled with an electrostatic protection material, a discharge inducing portion has protrusions protruding from interfaces between the opposing electrodes and the insulation substrates toward the insulation substrates and has a shape protruding on both sides of the insulation substrates. The relationship among the gap distance between the electrodes, the thicknesses of the opposing electrodes, and the protrusions of the discharge inducing portion is controlled under specific conditions. | 01-23-2014 |
20140263980 | IMAGERS WITH DEPTH SENSING CAPABILITIES - An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns. | 09-18-2014 |
20150062364 | Imaging Systems and Methods for Image Signal Gain Adjustment - An imaging system may include image processing circuitry and an image sensor having a pixel, readout circuitry, and control circuitry. The pixel may have a dual conversion gain gate for switching between a high conversion gain mode and a low conversion gain mode. The pixel may capture a first image signal while the dual conversion gain gate is turned of and a second image signal subsequent to capturing the first image signal while the dual conversion gain gate is turned on. The readout circuitry may identify a selected one of the first and second image signals to output to the image processing circuitry based on the first image signal. In this way, the readout circuitry may output a low conversion gain signal when saturating charge is stored on the charge storage region and may output a high conversion gain signal when insufficient charge is stored on the charge storage region. | 03-05-2015 |