Patent application number | Description | Published |
20080213501 | Method of manufacturing a magnetic recording head - A method of manufacturing a magnetic recording head includes a resist pattern forming step of forming a resist layer that is made of thermoplastic resin and in which a hole is formed in the shape of a main magnetic pole of the magnetic recording head, a hardening treatment step of hardening surfaces of the resist layer; a baking step that heat-bakes the resist layer after the hardening treatment step to temporarily make the resist layer fluid; and a main magnetic pole forming step of forming a main magnetic pole by filling the hole in the resist layer with a material of the main magnetic pole. | 09-04-2008 |
20080274431 | Resist pattern swelling material, and method for patterning using same - To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents. | 11-06-2008 |
20090081593 | Method for forming resist pattern and method for manufacturing a semiconductor device - The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask. | 03-26-2009 |
20100009296 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD - A material for forming a conductive antireflection film contains: a base resin having conductivity; a crosslinking agent; a thermal acid generator; and a solvent. | 01-14-2010 |
20100193841 | METHOD FOR FORMING RESIST PATTERN AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask. | 08-05-2010 |
20100227278 | MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE - A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask. | 09-09-2010 |
20110081615 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE - A material for forming a resist sensitization film contains a metal salt, a resin and, a solvent. A method for producing a semiconductor device contains applying such material (or a resist) onto a processing surface so as to form a resist sensitization film or a resist film, applying a resist (or the aforementioned material) onto the resist sensitization film so as to form a resist film (or a resist sensitization film); exposing the resist film (or the resist film and the resist sensitization film) to exposure light, and developing the exposed resist film (or the exposed resist film and resist sensitization film) so as to form a resist pattern; and etching the processing surface using the resist pattern as a mask so as to pattern the processing surface. | 04-07-2011 |
20120184071 | SURFACE COATING METHOD, SEMICONDUCTOR DEVICE, AND CIRCUIT BOARD PACKAGE - To provide a surface coating method, which contains applying a surface coating material to a layered structure so as to cover at least a surface of an insulating film of the layered structure, to form a coating on the surface of the insulating film, wherein the surface coating material contains a water-soluble resin, an organic solvent, and water, and wherein the layered structure contains the insulating film exposed to an outer surface, and a patterned metal wiring exposed to an outer surface. | 07-19-2012 |
20120214294 | METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE AND DETERGENT - A method for manufacturing a compound semiconductor device, the method includes: forming a compound semiconductor laminated structure; removing a part of the compound semiconductor laminated structure, so as to form a concave portion; and cleaning the inside of the concave portion by using a detergent, wherein the detergent contains a base resin compatible with residues present in the concave portion and a solvent. | 08-23-2012 |
20120220105 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE - A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid. | 08-30-2012 |
20130306102 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE - A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid. | 11-21-2013 |