| Patent application number | Description | Published |
|---|
| 20090035484 | Plasma processing method - Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H | 02-05-2009 |
| 20090039406 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, PLASMA NITRIDING TREATMENT METHOD, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM - A nitrided region is formed on a surface of a polysilicon layer by a nitriding treatment wherein plasma of a processing gas is generated by introducing microwaves into a processing chamber by a planar antenna having a plurality of slots. Then, a CVD oxide film or the like is formed on the nitrided region and after patterning the polysilicon layer and the like after the prescribed shape, and then, a thermal oxide film is formed by thermal oxidation on exposed side walls and the like of the polysilicon layer by having the nitrided region as an oxidation barrier layer. Thus, generation of bird's beak can be suppressed in the process at a temperature lower than the temperature in a conventional process. | 02-12-2009 |
| 20090053903 | SILICON OXIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER STORAGE MEDIUM - A plasma processing apparatus | 02-26-2009 |
| 20090072327 | Semiconductor Storage Device and Method for Manufacturing the Same - [Problems] To provide a semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by means of favorable nitrogen concentration profile of a gate insulating film, and to provide a method for manufacturing such a device. | 03-19-2009 |
| 20090239352 | METHOD FOR PRODUCING SILICON OXIDE FILM, CONTROL PROGRAM THEREOF, RECORDING MEDIUM AND PLASMA PROCESSING APPARATUS - A silicon oxide film formation method includes generating plasma inside a process chamber of a plasma processing apparatus, by use of a process gas having an oxygen ratio of 1% or more, and a process pressure of 133.3 Pa or less; and oxidizing by the plasma a silicon surface exposed inside a recessed part formed in a silicon layer on a target object, thereby forming a silicon oxide film. | 09-24-2009 |
| 20090263919 | PLASMA OXIDATION PROCESSING METHOD - A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O( | 10-22-2009 |
| 20100015815 | PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM - A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma. | 01-21-2010 |
| 20100029093 | PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM - A silicon oxide film forming method includes a step of placing an object to be processed and having a surface having a projecting/recessed pattern and containing silicon in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen at a proportion of 5 to 20% under a processing pressure of 267 to 400 Pa in the processing vessel, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma. | 02-04-2010 |
| 20100093179 | PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object. | 04-15-2010 |
| 20100105216 | PLASMA OXIDIZING METHOD, STORAGE MEDIUM, AND PLASMA PROCESSING APPARATUS - A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film. | 04-29-2010 |
| 20100247805 | METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM - An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film. | 09-30-2010 |
| 20100291319 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for plasma-processing a target substrate is provided. The plasma processing apparatus includes a metallic processing container forming a processing space in which a plasma process is performed, and a substrate mounting table provided in the processing space to mount a target substrate thereon, a quartz member which shields a sidewall of the metallic processing container from the processing space and whose lower end extends to a position lower than a substrate mounting surface of the substrate mounting table, an annular member which is made of quartz and is provided between a bottom surface of the quartz member and a bottom wall of the metallic processing container to shield the bottom wall of the metallic processing container from the processing space, and a processing gas inlet part for introducing a processing gas into the processing space from a vicinity of an outer periphery of the substrate mounting table. | 11-18-2010 |
| 20110039418 | METHOD FOR INSULATING FILM FORMATION, STORAGE MEDIUM FROM WHICH INFORMATION IS READABLE WITH COMPUTER, AND TREATMENT SYSTEM - In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma. | 02-17-2011 |
