| Patent application number | Description | Published |
|---|
| 20100003539 | Plated article having metal thin film formed by electroless plating, and manufacturing method thereof - The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 μΩ·cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film. | 01-07-2010 |
| 20100038111 | Plated article having metal thin film formed by electroless plating, and manufacturing method thereof - The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 μΩ·cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film. | 02-18-2010 |
| 20100215970 | METHOD FOR SUPPORTING METAL NANOPARTICLES AND METAL NANOPARTICLES-CARRYING SUBSTRATE - A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method. | 08-26-2010 |
| 20100244258 | SUBSTRATE AND MANUFACTURING METHOD THEREFOR - It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent. | 09-30-2010 |
| 20100244259 | SUBSTRATE AND MANUFACTURING METHOD THEREFOR - It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent. | 09-30-2010 |
| 20110129688 | PLATED PRODUCT HAVING COPPER THIN FILM FORMED THEREON BY ELECTROLESS PLATING - An object of the present invention is to provide a plated object having a thin seed layer of uniform thickness that enables the fabrication of ultrafine wiring thereon in which, when the seed layer is formed by electroless copper plating, the uniformity and adherence thereof are improved over the aforementioned case in which electroless copper plating is performed on an elemental metal such as tungsten, molybdenum, etc., and the aforementioned complexity of forming two layers of a barrier layer and a catalyst metal layer before forming the copper seed layer is eliminated. | 06-02-2011 |
| 20110155570 | Barrier Film for Semiconductor Wiring, Sintered Compact Sputtering Target and Method of Producing the Sputtering Target - Provided are a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30 unit: atomic percent), and a sintered compact sputtering target for forming a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30, unit: atomic percent), and comprising a target structure configured from a W matrix and Ni particles existing therein and in which W is diffused in the Ni particles. The present invention aims to provide a sputtering target that is particularly effective for use in forming a barrier film in which the target itself has the same composition as the barrier film without depending on the nitriding reaction in the sputtering process, which is capable of effectively preventing the reaction of a semiconductor device, which is free from the generation of particles in the sputtering process, and which yields superior characteristics upon forming the barrier film, as well as a method of producing such a target. | 06-30-2011 |
| 20110241209 | Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power - It is an object of the present invention to provide a layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, provide a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness, and provide a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. The present invention provides a substrate in which an alloy film of one or more metal elements, having a barrier function, selected from among tungsten, molybdenum and, niobium and a metal element or metal elements, having catalytic power with respect to electroless plating, composed of ruthenium and/or platinum is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm in a composition with a content ratio of the one or more metal element having a barrier function of equal to or greater than 5 at. % and equal to or less than 90 at. %. | 10-06-2011 |
