Patent application number | Description | Published |
20130307001 | n-AlGaN THIN FILM AND ULTRAVIOLET LIGHT EMITTING DEVICE INCLUDING THE SAME - An n-type aluminum gallium nitride (AlGaN) thin film and an ultraviolet light emitting device including the same. The ultraviolet light emitting device includes: an aluminum nitride (AlN) buffer layer on a substrate; and an n-type AlGaN layer, an active layer, a p-type AlGaN layer that are sequentially stacked on the AlN buffer layer. A silicon doping density of the n-type AlGaN layer increases with respect to an increasing vertical position of the n-AlGaN layer with reference to the AlN buffer layer. | 11-21-2013 |
20140008608 | SEMICONDUCTOR LIGHT-EMITTING DEVICES INCLUDING CONTACT LAYERS TO FORM REFLECTIVE ELECTRODES - A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode. | 01-09-2014 |
20140014897 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH DOPED BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer. | 01-16-2014 |
20140042454 | SEMICONDUCTOR LIGHT EMTTING DEVICE - A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner. | 02-13-2014 |
20140183546 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer. | 07-03-2014 |
20140203292 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer. | 07-24-2014 |
20140203293 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes a substrate, a multi-layer structure, a light-transmitting concave-convex structure and a light emitting structure. The multi-layer structure has layers of a first layer and a second layer such that the first and second layers have different refractive indexes and are alternately stacked. The concave-convex structure is disposed in an upper surface of the multi-layer structure and includes a light-transmitting material. The light emitting structure is disposed on the multi-layer structure and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. | 07-24-2014 |
20150118777 | Nano-structure semiconductor light emitting device - A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer. | 04-30-2015 |
20150194571 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions. | 07-09-2015 |
20150236202 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer. | 08-20-2015 |
20150303350 | NANO-STRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer. | 10-22-2015 |
20160056331 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region. | 02-25-2016 |
20160064608 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer. | 03-03-2016 |
20160072007 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer. | 03-10-2016 |
20160099376 | METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity. | 04-07-2016 |
Patent application number | Description | Published |
20130216968 | APPARATUS FOR REFINING ORGANIC MATERIAL - An apparatus for refining an organic material includes an outer tube, a plurality of inner tubes in the outer tube and including at least one loading inner tube for loading an organic material to be refined and comprising a first loading boat and a second loading boat above the first loading boat in the loading inner tube, and at least one collecting inner tube for collecting refined organic material, a heating unit outside the outer tube, and a vacuum pump coupled to the outer tube for providing low pressure in the outer tube and the inner tubes. | 08-22-2013 |
20140151650 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound are described. | 06-05-2014 |
20140231759 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting device includes a first electrode; a second electrode; an organic layer between the first electrode and the second electrode; and a light efficiency-improvement layer disposed on the first electrode or the second electrode. The light efficiency-improvement layer includes a heterocyclic compound represented by Formula 1, | 08-21-2014 |
20140239261 | ORGANIC LIGHT EMITTING DIODE DEVICE - An organic light emitting diode device includes an anode and a cathode facing each other, and an emission layer interposed between the anode and cathode, the emission layer including a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 2: | 08-28-2014 |
20140239275 | COMPOUND AND ORGANIC LIGHT EMITTING DEVICE COMPRISING THE SAME - An organic light emitting compound includes the compound of Formula 1 below: | 08-28-2014 |
20140252324 | COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - Provided is an organic light-emitting diode including a compound of Formula 1 below: | 09-11-2014 |
20140319473 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT EMITTING DEVICE COMPRISING THE SAME - A compound represented by Formula 1 below and an organic light-emitting device including the compound are provided: | 10-30-2014 |
20140319485 | ORGANIC LIGHT-EMITTING DIODES - Provided is an organic light-emitting diode including a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer and at least one first material represented by Formula 1 and at least one second material represented by Formula 2. | 10-30-2014 |
20150041770 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITING DEVICE INCLUDING THE SAME - A heterocyclic compound and an organic light-emitting device including the heterocyclic compound, the heterocyclic compound being represented by Formula 1 below: | 02-12-2015 |
20150048327 | ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - A compound is represented by the following Chemical Formula 1: | 02-19-2015 |
20150155497 | COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An organic light-emitting device including a first electrode, a second electrode and an organic layer disposed between the first electrode and the second electrode is provided. | 06-04-2015 |
20150162553 | ORGANOMETALLIC COMPLEX AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An organometallic complex represented by Formula 1 below and an organic light-emitting device including the same: | 06-11-2015 |
20150255731 | COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A compound is represented by Formula 1 or Formula 2, and an organic light-emitting device includes the same. | 09-10-2015 |
20150263235 | FLEXIBLE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided is a flexible display apparatus having an improved light extracting efficiency and a method of manufacturing the flexible display apparatus. The flexible display apparatus includes a flexible substrate having a rippled surface, a pixel electrode on the flexible substrate and having a rippled surface, an intermediate layer on the pixel electrode and including a light emission layer, and an opposing electrode facing the pixel electrode. A method of manufacturing the flexible display apparatus includes applying a tensile force to a flexible substrate, forming a pixel electrode on the flexible substrate, removing the tensile force applied to the flexible substrate to form a rippled surface in the pixel electrode, forming an intermediate layer including an light emission layer on the pixel electrode, and forming an opposing electrode facing the pixel electrode. | 09-17-2015 |
20150318486 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device and a flat panel display device, the organic light-emitting device including an anode; cathode; and organic layer therebetween, the organic layer including a hole transport region between the anode and the emission layer and that includes at least one of a hole injection layer, a hole transport layer, a buffer layer, and an electron blocking layer, an electron transport region between the emission layer and the cathode, the electron transport region including at least one of a hole blocking layer, an electron transport layer, and an electron injection layer, and a mixed organic layer disposed between the emission layer and the electron transport region, wherein the mixed organic layer includes a hole transport compound and an electron transport compound, and an electron affinity (EA1) of the hole transport compound and an electron affinity (EA2) of the electron transport compound satisfy the following relationship: | 11-05-2015 |
20150318487 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device and a flat panel display device, the organic-light emitting device including an anode; a cathode; and an organic layer therebetween including an emission layer, a hole transport region between the anode and the emission layer, the hole transport region including at least one of a hole injection layer, a hole transport layer, and an electron blocking layer, an electron transport region between the emission layer and the cathode, the electron transport region including at least one of a hole blocking layer, an electron transport layers and an electron injection layer, and a buffer layer between the emission layer and the electron transport region, wherein the buffer layer includes a biscarbazole-based derivative and triphenylene-based derivative, and a triplet energy (E | 11-05-2015 |
20150318488 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a first electrode, a second electrode facing the first electrode, and an organic layer disposed between the first electrode and the second electrode and including an emission layer; an electron transport region disposed between the second electrode and the emission layer; a mixed layer disposed between the emission layer and the electron transport region and including a first material and a second material; wherein the first material and the second material are pyrrolidine-based compounds; and triplet energy Eg | 11-05-2015 |
20150318508 | ORGANIC LIGHT-EMITTING DEVICE - An OLED and a flat panel display, the OLED including an anode; a cathode; and an organic, the organic layer including an EML, the EML including first and second hosts, a hole transport region between the anode and the EML and including at least one of a hole injection layer (HIL), a hole transport layer (HTL), a buffer layer, or an electron blocking layer (EBL), an electron transport region between the EML and the cathode, the electron transport region including at least one of a hole blocking layer (HBL), an electron transport layer (ETL), or an electron injection layer (EIL), and an intermediate layer between the EML and the electron transport region; wherein an electron affinity of a compound of the intermediate layer [EA | 11-05-2015 |
20150318510 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes an anode, a cathode, and an organic layer between the anode and the cathode, wherein the organic layer includes a mixed organic layer, and the mixed organic layer includes at least two different compounds, and a triplet energy of at least one compound of the at least two different compounds is 2.2 eV or higher. The organic light-emitting device according to embodiments of the present invention may have a low driving voltage, a high efficiency, and a long lifespan. | 11-05-2015 |
20150318511 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device and a flat panel display, the device including an anode; a cathode; and an organic layer therebetween, the organic layer including an EML, the EML including a first host and a second host that are different from one another, a hole transport region between the anode and the EML, the hole transport region including at least one of a hole injection layer (HIL), a hole transport layer (HTL), a butler layer, or an electron blocking layer (EBL), an electron transport region between the EML and the cathode, the electron transport region including at least one of a hole blocking layer (HBL), an electron transport layer (ETL), or an electron injection layer (EIL), and an intermediate layer between the EML and the electron transport region; wherein the intermediate layer includes a compound having an electron affinity of more than 0 eV and less than 2.5 eV. | 11-05-2015 |
20150325801 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes: a first electrode, a second electrode facing the first electrode, and an organic layer between the first electrode and the second electrode, the organic layer including: an emission layer, an electron transport region between the second electrode and the emission layer, and a mixed layer between the emission layer and the electron transport region, the mixed layer including a first material and a second material, the first material and the second material being selected from a pyrrolidine-based compound and a C | 11-12-2015 |
20150349266 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a first electrode; a second electrode; and an organic layer between the first electrode and the first electrode and including an emission layer (EML); a hole transport region between including an electron blocking layer (EBL) and at least one selected from a hole injection layer (HIL), a hole transport layer (HTL), and a buffer layer; and an electron transport region and including a hole blocking layer (HBL) and at least one selected from an electron transport layer and electron injection layer (EIL). A triplet energy of a material for the electron blocking layer (EBL T1), a triplet energy of a material for the hole blocking layer (HBL T1), and a triplet energy of a host in the emission layer (Host T1) satisfy Equation (1) and Equation (2): | 12-03-2015 |
20150357574 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes at least one first material represented by Formula 1 and at least one second material represented by Formula 2: | 12-10-2015 |
20150364693 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes at least one first material represented by Formula 1 below, and at least one second material represented by Formula 2 below: | 12-17-2015 |
20150380662 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes at least one first material and at least one second material, the first material being represented by one of Formulae 1-1 and 1-2, below, and the second material being represented by Formula 2, below: | 12-31-2015 |
20160005979 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes at least one first material and at least one second material, the first material being represented by one of Formulae 1-1 and 1-2, below, and the second material being represented by Formula 2, below: | 01-07-2016 |
20160005980 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes at least one first material and at least one second material, the first material being represented by Formula 1 and the second material being represented by Formula 2: | 01-07-2016 |
20160028017 | ORGANIC LIGHT EMITTING DEVICE - An organic light-emitting device including a first electrode; a second electrode opposite to the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a first compound represented by the following Formula 1 and a second compound represented by the following Formula 2: | 01-28-2016 |