Patent application number | Description | Published |
20080197346 | Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer - Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same. | 08-21-2008 |
20080299382 | Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer - Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device. | 12-04-2008 |
20080308793 | Composition and organic insulator prepared using the same - Disclosed are a composition including a silane-based organic/inorganic hybrid material having a multiple bond and one or more organic metal compounds and/or one or more organic polymers, an organic insulator including the composition, an organic thin film transistor (OTFT) including the organic insulator and an electronic device including the OTFT. The organic insulator including the composition for preparing an organic insulator has increased charge mobility and an increased on/off current ratio, thus exhibiting improved properties, and the organic thin film transistor manifests uniform properties due to the absence of hysteresis. | 12-18-2008 |
20090032809 | Organic thin film transistor and method of manufacturing the same - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 02-05-2009 |
20090045396 | Composition for forming passivation layer and organic thin film transistor comprising the passivation layer - Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics. | 02-19-2009 |
20090197090 | Composition, anti-oxide film including the same, electronic component including the anti-oxide film, and methods for forming the anti-oxide film and electronic component - Disclosed herein is a composition, including a fluorine-based polymer or a perfluoropolyether (PFPE) derivative and a PFPE-miscible polymer, an anti-oxide film and electronic component including the same, and methods of forming an anti-oxide film and an electronic component. Use of the composition may achieve formation of an anti-oxide film through a solution process and electronic components using a metal having increased conductivity and decreased production costs. | 08-06-2009 |
20120018713 | Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer - Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same. | 01-26-2012 |
20120083069 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 04-05-2012 |
20120122275 | METHODS OF FABRICATING ORGANIC THIN FILM TRANSISTORS - Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments. | 05-17-2012 |
20140048318 | COMPOSITION, ANTI-OXIDE FILM INCLUDING THE SAME, ELECTRONIC COMPONENT INCLUDING THE ANTI-OXIDE FILM, AND METHODS FOR FORMING THE ANTI-OXIDE FILM AND ELECTRONIC COMPONENT - Disclosed herein is a composition, including a fluorine-based polymer or a perfluoropolyether (PFPE) derivative and a PFPE-miscible polymer, an anti-oxide film and electronic component including the same, and methods of forming an anti-oxide film and an electronic component. Use of the composition may achieve formation of an anti-oxide film through a solution process and electronic components using a metal having increased conductivity and decreased production costs. | 02-20-2014 |