| Patent application number | Description | Published |
|---|
| 20090233513 | FRIT SEALING SYSTEM - A frit sealing system for combining a first substrate and a second substrate using frit comprises a laser generating a laser beam, and a homogenizer normalizing the intensity of the laser beam within a cross section of the laser beam in the transverse direction. The frit sealing system further comprises a support apparatus configured to hold a first and a second substrate with frit interposed between them, wherein the frit is configured to be cured by heat generated from the laser beam and thereby solidifying and binding the first and the second substrates. | 09-17-2009 |
| 20090233514 | Frit sealing system and method of manufacturing organic light emitting display device - A frit sealing system and a method of manufacturing an organic light emitting display device by using the frit sealing system, and more particularly, a frit sealing system and a method of manufacturing an organic light emitting display device by using the frit sealing system, which includes a pressure member so as to physically pressurize a first substrate and a second substrate, thereby increasing adhesion of a frit when the first substrate and the second substrate are adhered to each other by using the frit. The frit sealing system, adhering the first substrate and the second substrate by using the frit, includes: a bed member on which the first substrate is placed; a laser irradiation member irradiating a laser to the frit between the first substrate and the second substrate; and a pressure member disposed on an upper part of the first substrate and the second substrate irradiated with the laser and adhered, thereby pressurizing the first substrate and the second substrate irradiated with the laser and adhered. | 09-17-2009 |
| 20100172172 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM INCLUDING THE SAME, AND VOLTAGE SUPPLY METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device, a semiconductor system including the same, and a voltage supply method of the semiconductor device are provided. The semiconductor device includes at least two semiconductor memory devices and a voltage supply controller configured to selectively supply a voltage to each of the at least two semiconductor memory devices. | 07-08-2010 |
| 20100172174 | SEMICONDUCTOR DEVICE HAVING ARCHITECTURE FOR REDUCING AREA AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME - A semiconductor device having an architecture for reducing an area is provided. The semiconductor device includes a memory cell array including a plurality of non-volatile memory cells, a plurality of registers each configured to store pre-fetch unit data, and a write driver circuit configured to write pre-fetch unit data sequentially output from the plurality of registers to the memory cell array during a write operation. The semiconductor device also includes a sense amplifier circuit configured to sense and amplify pre-fetch unit data sequentially output from the memory cell array and to sequentially store the amplified pre-fetch unit data in the plurality of registers, respectively, during a read operation. | 07-08-2010 |
| 20100202182 | MEMORY DEVICES, SYSTEMS AND METHODS USING MULTIPLE 1/N PAGE ARRAYS AND MULTIPLE WRITE/READ CIRCUITS - A memory device architecture includes N arrays respectively for storing a 1/N of a page and N write/read circuits, where N is a natural number, respectively for writing or reading a 1/N of the page to/from each of the N arrays. | 08-12-2010 |
| 20100214862 | Semiconductor Devices and Methods for Changing Operating Characteristics and Semiconductor Systems Including the Same - A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage. | 08-26-2010 |
| Patent application number | Description | Published |
|---|
| 20090186225 | Flaky Alpha-Alumina Crystal and a Method of Its Preparation - The present invention relates to a flaky α-alumina crystal and a preparation method thereof. More particularly, the present invention relates to a flaky α-alumina crystal comprising aluminum oxide and zinc oxide, which is prepared by hydrolyzing an aluminum precursor solution containing a water-soluble flux and a zinc precursor solution to obtain a gel mixture and aging, drying, calcining and crystallizing it under a specific reaction condition, and a preparation method thereof. Since the flaky α-alumina crystal of the present invention has a thickness of less than 0.5 μm, an average particle diameter of at least 15 μm and an aspect ratio of at least 50, it is useful as high-quality pearlescent pigment material and filler for ceramic materials. | 07-23-2009 |
| 20090320719 | PEARLESCENT PIGMENTS WITH LARGE ASPECT RATIO AND A METHOD OF THEIR PREPARATION - The present invention relates to a pearlescent pigment with large aspect ratio and a method of their preparation, and particularly to pearlescent pigments prepared by coating a metal or metal precursor on the flaky alpha-alumina crystals obtained by using an aluminum precursor aqueous solution and a zinc precursor aqueous solution as main ingredients. The crystals herein has an average particle thickness of 0.5 μm or less, an average particle diameter of 15 μm or higher and a large aspect ratio of 50 or higher, thereby being superior in gloss. The crystals show metal colors and interference colors of silver, gold, red, purple, blue and green. | 12-31-2009 |
| 20100015445 | FLAKY ALPHA-ALUMINA CRYSTALS WITH LARGE ASPECT RATIO AND A PREPARATION METHOD OF THE SAME - The present invention relates to flaky alpha-alumina crystals with large aspect ratio and its preparation method, and particularly to flaky alpha-alumina crystals comprising aluminum oxide, zinc oxide and tin oxide, which are prepared by obtaining a mixed gel which are prepared by obtaining a mixed gel by means of hydrolysis of an aqueous aluminum precursor solution comprising aqueous flux, aqueous zinc precursor solution and tin precursor aqueous solution, followed by aging, drying and crystallization processes. The crystals herein have an average particle thickness of 0.5 um or less, an average particle diameter of 30 μm or higher and an aspect ratio of 100 or higher, thus being useful as a substrate of high quality pearlescent pigments, an abrasive, ceramic material and a filling material. | 01-21-2010 |
