Jung-Jie
Jung-Jie Huang, Yunlin TW
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20090184321 | MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline active layer, and being separated from an incubation layer in a bottom interface of the microcrystalline active layer. The inversion layer channel is formed in the crystallized layer of the top interface of the microcrystalline active layer. As such, the present microcrystalline thin film transistor has better electrical performance and reliability. | 07-23-2009 |
Jung-Jie Huang, Hsin Chu Hsien TW
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20090029532 | Method for forming a microcrystalline silicon film - This invention provides a method for forming a microcrystalline silicon film, which employs a three-stage deposition process to form a microcrystalline film. A microcrystalline silicon seed layer is formed on a substrate. Gaseous ions are used to bombard a surface of the microcrystalline silicon seed layer. Microcrystalline silicon is formed on the microcrystalline silicon seed layer after the bombardment to a predetermined thickness. | 01-29-2009 |
Jung-Jie Huang, Yulin County TW
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20090020790 | METHOD FOR FABRICATING POLYSILICON FILM, A GAS PHASE DEPOSITION APPARATUS AND AN ELECTRONIC DEVICE FORMED THEREBY - A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage. | 01-22-2009 |
Jung-Jie Huang, Citong Township TW
Patent application number | Description | Published |
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20120061689 | LIGHT-EMITTING DEVICE AND METHOD MANUFACTURING THE SAME - A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the second region. The light-electricity-transforming element is disposed over the substrate and located in the first region. At least a portion of a side wall of the light-electricity-transforming element corresponds to at least a portion of a side wall of the light-emitting element, so that at least a side light from the light-emitting element is received and transformed into an electricity power by the light-electricity-transforming device. | 03-15-2012 |