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Jung Eun Lim, Yongin-Si KR

Jung Eun Lim, Yongin-Si KR

Patent application numberDescriptionPublished
20080252209MULTILAYER NANOCRYSTAL STRUCTURE AND METHOD FOR PRODUCING THE SAME - Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.10-16-2008
20080258159METHOD FOR PREPARING METAL PHOSPHIDE NANOCRYSTAL FROM PHOSPHITE COMPOUND AND METHOD FOR PASSIVATING NANOCRYSTAL CORE WITH THE SAME - Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes.10-23-2008
20080268248NANOCRYSTAL, METHOD FOR PREPARING THE SAME AND ELECTRONIC DEVICE COMPRISING THE SAME - Disclosed herein are a nanocrystal, a method for preparing the nanocrystal, and an electronic device comprising the nanocrystal. The nanocrystal comprises a semiconductor nanocrystal core, a non-semiconductor buffer layer surrounding the semiconductor nanocrystal core, and a shell surrounding the buffer layer.10-30-2008
20080280161LIGHT EMITTING DIODE DEVICE USING NANOCRYSTAL-METAL OXIDE COMPOSITE AND METHOD FOR FABRICATING THE SAME - A light emitting diode device includes a light emitting diode chip and a nanocrystal-metal oxide monolith having a nanocrystal-metal oxide composite disposed on a light emitting surface of the light emitting diode chip11-13-2008
20080290936NANOCRYSTAL-METAL OXIDE COMPLEX AND METHOD FOR PREPARING THE SAME - Disclosed herein is a nanocrystal-metal oxide complex. The nanocrystal of the nanocrystal-metal oxide complex is substituted with two or more different types of surfactants which are miscible with a metal oxide precursor and enable maintenance of luminescent and electrical properties of the nanocrystal. The nanocrystal-metal oxide complex exhibits superior optical and chemical stability and secures high luminescent efficiency of the nanocrystal. Accordingly, when the nanocrystal-metal oxide complex is used as a luminescent material of an electroluminescent device, it can improve luminescent efficiency and reliability of products. Further disclosed herein is a method for preparing the nanocrystal-metal oxide complex.11-27-2008
20080305334CORE/SHELL NANOCRYSTALS AND METHOD FOR PRODUCING THE SAME - Disclosed herein are a core/shell nanocrystal and a method for producing the same. More specifically, disclosed herein are a core/shell nanocrystal comprising a metal-doped shell nanocrystal, and a method for producing the same. The core/shell nanocrystal comprises a core nanocrystal and a metal-doped shell nanocrystal formed on the core nanocrystal. Based on the structure, the core/shell nanocrystal exhibits superior crystallinity and high luminescence efficiency, enables easy control of the shape and size and can be produced in a simple manner.12-11-2008
20090127576NANOCRYSTAL LIGHT-EMITTING DIODE - A nanocrystal light-emitting diode with improved structural stability is disclosed. Specifically, the nanocrystal light-emitting diode comprises an excitation source, a nanocrystal-containing light conversion layer and an air layer formed therebetween to be exposed to the outside.05-21-2009
20090274188Light emitting device and fabrication method thereof - Disclosed herein is a light emitting device with improved life characteristics. The light emitting device comprises a circuit board having a recess, a reflection plane and an excitation source disposed in the recess, an overmolding overlying the reflection plane and the excitation source, a surface-inducing film formed on the overmolding, and a light conversion layer overlying the surface-inducing film. Also disclosed herein is a method for fabricating the light emitting device.11-05-2009

Patent applications by Jung Eun Lim, Yongin-Si KR