Jung-Ching
Jung-Ching Chang, Kaohsiung City TW
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20120225248 | ARTIFICIAL LEATHER HAVING COMPOSITE FIBER AND METHOD FOR MAKING THE SAME - The present invention relates to an artificial leather having composite fibers and a method for making the same. The artificial leather includes a substrate and a flexible film. The substrate includes a plurality of composite fibers. Each composite fiber includes a first composition and a second composition. The first composition is a thermoplastic non-elastomer, and the second composition is a thermoplastic elastomer. The second composition accounts for 5% to 70% of the total weight of the composite fiber. The second composition at the intersecting points between the composite fibers is molten to form a flexible bonding point. | 09-06-2012 |
Jung-Ching Chen, Hsinchu City TW
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20080237740 | SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor device is provided. First, a substrate is provided. The substrate includes a high-voltage device region and a low-voltage device region. The high-voltage device region has a source/drain predetermined region, a pick-up predetermined region and a channel predetermined region. A first dielectric layer is formed on the substrate. Then, the first dielectric layer in the low-voltage device region is removed along with the first dielectric layer in the source/drain predetermined region and the pick-up predetermined region. Afterwards, a second dielectric layer is formed in the low-voltage device region. The thickness of the second dielectric layer is smaller than the thickness of the first dielectric layer. Then, gates are formed in the channel predetermined region and the low-voltage device region respectively. Next, a source/drain region is formed in the substrate of the source/drain predetermined region. | 10-02-2008 |
20080280448 | METHOD FOR MANUFACTURING GATE OXIDE LAYER WITH DIFFERENT THICKNESSES - A method of manufacturing gate oxide layers with different thicknesses is disclosed. The method includes that a substrate is provided first. The substrate has a high voltage device region and a low voltage device region. Then, a high voltage gate oxide layer is formed on the substrate. Afterwards, a first wet etching process is performed to remove a portion of the high voltage gate oxide layer in the low voltage device region. Then, a second wet etching process is performed to remove the remaining high voltage gate oxide layer in the low voltage device region. The etching rate of the second wet etching process is smaller than that of the first wet etching process. Next, a low voltage gate oxide layer is formed on the substrate in the low voltage device region. | 11-13-2008 |
20090108348 | SEMICONDUCTOR DEVICE - A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d | 04-30-2009 |
20100109081 | SEMICONDUCTOR DEVICE AND IC CHIP - A semiconductor device and an IC chip are described. The deep N-well region is configured in a substrate. The P-well region surrounds a periphery of the deep N-well region. The gate structure is disposed on the substrate of the deep N-well region. The P-body region is configured in the deep N-well region at one side of the gate structure. The first N-type doped region is configured in the P-body region. The second N-type doped region is configured pin the deep N-well region at the other side of the gate structure. The first isolation structure is disposed between the gate structure and the second N-type doped region. The N-type isolation ring is configured in the deep N-well region and corresponding to an edge of the deep N-well region, wherein a doping concentration of the N-type isolation ring is higher than that of the deep N-well region. | 05-06-2010 |
20120329233 | WAFER TREATMENT METHOD AND FABRICATING METHOD OF MOS TRANSISTOR - A wafer treatment method includes the following steps. A wafer is provided, wherein the wafer includes a substrate, a first oxide layer located on a front side of the substrate and a second oxide layer located on a back side of the substrate. An etching process is performed to entirely remove the first oxide layer. A fabricating method of a MOS transistor applying the wafer treatment method is also provided. | 12-27-2012 |
Jung-Ching Chen, Taichung City TW
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20140370680 | METHOD OF FABRICATING HIGH VOLTAGE DEVICE - A method of fabricating a high voltage device includes the step of forming a patterned photoresist layer on a conductive layer and a dielectric below the conductive. The conductive layer and the dielectric layer are patterned by taking the patterned photoresist layer as a mask. Subsequently the patterned photoresist layer is shrunk. The conductive layer and the dielectric layer are then patterned by taking the shrunk photoresist layer as a mask. | 12-18-2014 |
Jung-Ching Chen, Hsin-Chu TW
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20090102991 | Liquid Crystal Display Panel - A liquid crystal display panel is provided. The liquid crystal display panel includes a plurality of pixel units, a first common voltage region and a second common voltage region. The pixel units include a first group of pixel units and a second group of pixel units arranged in rows and columns. The first common voltage region carries a first alternating current thereon and is electrically connected to the first group of pixel units. The second common voltage region carries a second alternating current thereon and is electrically connected to the second group of pixel units. | 04-23-2009 |
20130083095 | DISPLAY DEVICE AND METHOD FOR DISPLAYING 3D IMAGES THEREOF - A method for displaying 3D images of a display device is disclosed. The display device includes a display panel and a backlight module. The method includes determining a first turn-on time length of the backlight module according to a gray level of at least a pixel of a first frame; when the display panel displays the first frame, turning on the backlight module for the first turn-on time length; determining a second turn-on time length of the backlight module according to a gray level of at least a pixel of a second frame; and when the display panel displays the second frame, turning on the backlight module for the second turn-on time length. The method for displaying 3D images can reduce crosstalk effect of the display device. | 04-04-2013 |
Jung-Ching Chen, Kaohsiung City TW
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20100270714 | Apparatus for observing interior of a blast furnace system - An apparatus for observing the interior of a blast furnace system includes a visible light guiding unit which defines a light path along a viewing axis that is radial to an upright axis of a furnace wall body of a blast furnace and which is adapted to be secured to a furnace blowpipe to permit the light path to be in visual communication with a tuyere, a beam splitter which is disposed in an accommodation space in the tubular mount to split a beam of light propagating along the light path into a horizontal component so that the operator can observe furnace condition through a peeping hole, and a vertical component, and a video camera system which includes an elongate casing connected to the tubular mount, and a video camera disposed in a cooling chamber of the casing to capture a light image from the vertical component of the light beam. | 10-28-2010 |
Jung-Ching Ko, Taichung TW
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20100257759 | REPLACEMENT AND URGING DEVICE FOR THE BUCKET TEETH OF AN ENGINEERING CONSTRUCTION MACHINE - A replacement and urging device for the bucket teeth of an engineering construction machine is disclosed. An adaptor is mounted with a bucket tooth. A first through hole holes horizontally through the adaptor. Both sides of the bucket tooth are formed with a second through hole, respectively. An engaging unit is interposed between the first through hole and the second through hole to slide between them. This enables the bucket tooth to be mounted and positioned on the adaptor. The invention thus prevents the bucket tooth from constantly hitting the adaptor. | 10-14-2010 |
Jung-Ching Ko, Taichung City TW
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20120304507 | Structure of Bucket Tooth for Construction Tools - An improved structure of bucket tooth for construction tools includes an adapter and a bucket tooth mounted on the adapter. The adapter has an accommodating room and a fixing section. Both side of the bucket tooth have a hole, respectively. An engaging unit is disposed at the accommodating room and the fixing section of the adapter and between the holes of the bucket tooth. The engaging unit includes a lock, an elastic element, and a fixing element. The end of the lock protruding from the accommodating room has an outer angle facing the fixing part to urge against the inner angle in the corresponding hole of the bucket tooth. The lock can thus position the bucket tooth on the adapter and maintains no impact gap between them. When the engaging unit loses its effect, the fixing element prevents the bucket tooth from falling off the adapter. | 12-06-2012 |
Jung-Ching Wang, Taichung City TW
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20120113407 | AUTOMATIC LASER RANGEFINDER AND METHOD OF AUTOMATICALLY ACTIVATING THE LASER RANGEFINDER TO MEASURE DISTANCE - The present invention provides a laser rangefinder and a method of activating the laser rangefinder to measure distance. The laser rangefinder has a first sensing to sense whether the user is aiming the laser rangefinder at a target and a second sensing device to sense an acceleration of the laser rangefinder and the acceleration has to be smaller than a preset value. The laser rangefinder will be automatically activated to measure distance when both of the first sensing device and the second device are checked. | 05-10-2012 |
Jung-Ching Wang, Tantz-Shiang TW
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20100085472 | IMAGE RECORDING APPARATUS AND CONTROL METHOD THEREOF - Disclosed is an image recording apparatus capable of preventing maloperations when entering into sleep mode. The image recording apparatus comprises a display module, a detecting unit, a power supply unit, a first switch, a second switch and a control unit having an interrupt unit. The control unit controls the first switch in an on-state to supply power to the display module and the detecting unit and executes a corresponding operation. After an idle status of the image recording apparatus exceeds a predetermined time, the control unit disables the interrupt unit and controls the second switch in an on-state and the first switch in an off-state to supply power to the detecting unit via the second switch. After a default time, the control unit enables the interrupt unit, therefore, maloperations when entering into the sleep mode can be prevented. | 04-08-2010 |
20100102228 | Image Recording Apparatus And Control Method Thereof - Disclosed is an image recording apparatus comprising a temperature sensing module, a detecting module, an image capture module and a control unit. The control unit acquires an appropriate high threshold and an appropriate low threshold corresponding to an ambient temperature sensed by a temperature sensing module. The control unit outputs a high threshold voltage and a low threshold voltage to the detecting module for adjusting the sensitivity of the image recording apparatus to suit a variable ambient temperature properly. | 04-29-2010 |