| Patent application number | Description | Published |
|---|
| 20090001466 | METHOD OF FORMING AN SOI SUBSTRATE CONTACT - A method is provided of forming a conductive via for contacting a bulk semiconductor region of a semiconductor-on-insulator (“SOI”) substrate. A first opening is formed in a conformal layer overlying a trench isolation region, where the trench isolation region shares an edge with the SOI layer. A dielectric layer then is deposited atop the conformal layer and the trench isolation region, after which a second opening is formed which is aligned with the first opening, the second opening extending through the dielectric layer to expose the bulk semiconductor region. Finally, the conductive via is formed in the second opening. | 01-01-2009 |
| 20090092810 | FABRICATION OF SOI WITH GETTERING LAYER - An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate. | 04-09-2009 |
| 20090102026 | SEMICONDUCTOR-ON-INSULATOR SUBSTRATE WITH A DIFFUSION BARRIER - A diffusion barrier layer is incorporated between a top semiconductor layer and buried oxide layer. The diffusion barrier layer blocks diffusion of dopants into or out of buried oxide layer. The diffusion barrier layer may comprise a dielectric material such as silicon oxynitride or a high-k gate dielectric material. Alternately, the diffusion barrier layer may comprise a semiconductor material such as SiC. Such materials provide less charge trapping than a silicon nitride layer, which causes a high level of interface trap density and charge in the buried oxide layer. Thus, diffusion of dopants from and into semiconductor devices through the buried oxide layer is suppressed by the diffusion barrier layer without inducing a high interface trap density or charge in the buried oxide layer. | 04-23-2009 |
| 20090242936 | STRAINED ULTRA-THIN SOI TRANSISTOR FORMED BY REPLACEMENT GATE - A semiconductor structure is described. The structure includes a transistor formed in a semiconductor substrate, the semiconductor substrate having a semiconductor-on-insulator (SOI) layer; a channel associated with the transistor and formed on a first portion of the SOI layer; and a source/drain region associated with the transistor and formed in a second portion of the SOI layer and in a recess at each end of the channel, where the second portion of the SOI layer is substantially thicker than the first portion of the SOI layer. A method of fabricating the semiconductor structure is also described. The method includes forming a dummy gate in a semiconductor substrate; performing a SIMOX process to form a SOI layer such that a first portion of the SOI layer under the dummy gate is substantially thinner than a second portion of the SOI layer; forming a source/drain extension in the SOI layer; and recessing the source/drain extension for forming a source/drain region; epitaxially growing the second portion of the SOI layer; forming an insulating layer over the epitaxial growth; removing the dummy gate for forming a gate opening; and filling the gate opening with a gate dielectric material and a gate conductor material. | 10-01-2009 |
| 20110049594 | SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION - A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI substrate includes forming an oxide layer on a silicon first substrate; ion-implanting hydrogen through the oxide layer into the first substrate, to form a fracture zone in the substrate; forming a doped dielectric bonding layer on a silicon second substrate; bonding a top surface of the bonding layer to a top surface of the oxide layer; thinning the first substrate by thermal cleaving of the first substrate along the fracture zone to form a silicon layer on the oxide layer to formed a bonded substrate; and heating the bonded substrate to drive dopant from the bonding layer into the second substrate to form a doped layer in the second substrate adjacent to the bonding layer. | 03-03-2011 |
| 20110121363 | STRAINED ULTRA-THIN SOI TRANSISTOR FORMED BY REPLACEMENT GATE - A semiconductor structure is described. The structure includes a transistor formed in a semiconductor substrate, the semiconductor substrate having a semiconductor-on-insulator (SOI) layer; a channel associated with the transistor and formed on a first portion of the SOI layer; and a source/drain region associated with the transistor and formed in a second portion of the SOI layer and in a recess at each end of the channel, where the second portion of the SOI layer is substantially thicker than the first portion of the SOI layer. A method of fabricating the semiconductor structure is also described. The method includes forming a dummy gate in a semiconductor substrate; performing a SIMOX process to form a SOI layer such that a first portion of the SOI layer under the dummy gate is substantially thinner than a second portion of the SOI layer; forming a source/drain extension in the SOI layer; and recessing the source/drain extension for forming a source/drain region; epitaxially growing the second portion of the SOI layer; forming an insulating layer over the epitaxial growth; removing the dummy gate for forming a gate opening; and filling the gate opening with a gate dielectric material and a gate conductor material. | 05-26-2011 |
| 20110193149 | SILICON-ON-INSULATOR SUBSTRATE WITH BUILT-IN SUBSTRATE JUNCTION - A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI substrate includes forming an oxide layer on a silicon first substrate; ion-implanting hydrogen through the oxide layer into the first substrate, to form a fracture zone in the substrate; forming a doped dielectric bonding layer on a silicon second substrate; bonding a top surface of the bonding layer to a top surface of the oxide layer; thinning the first substrate by thermal cleaving of the first substrate along the fracture zone to form a silicon layer on the oxide layer to formed a bonded substrate; and heating the bonded substrate to drive dopant from the bonding layer into the second substrate to form a doped layer in the second substrate adjacent to the bonding layer. | 08-11-2011 |
| 20110193193 | STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRENCH CAPACITOR - A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method comprise angular implanting of the deep trench isolation area to form a P region at the base of the deep trench isolation area that serves as an anti-punch through implant. | 08-11-2011 |
