| Patent application number | Description | Published |
|---|
| 20110024784 | LIGHT-EMITTING ELEMENT - Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, a first light extracting structure layer having a concave-convex structure on the passivation layer, a first electrode layer electrically connected to the first conductive semiconductor layer through the passivation layer and the first light extracting structure layer, and a second electrode layer electrically connected to the second conductive semiconductor layer through the passivation layer and the light extracting structure layer. | 02-03-2011 |
| 20110062412 | LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer. | 03-17-2011 |
| 20110062467 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer. | 03-17-2011 |
| 20110101304 | LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer over the support substrate, a second electrode layer, which includes a current blocking layer and a reflective current spreading layer, over the wafer bonding layer, a current injection layer over the second electrode layer, a superlattice structure layer over the current injection layer, a second conductive semiconductor layer over the superlattice structure layer, an active layer over the second conductive semiconductor layer, a first conductive semiconductor layer over the active layer, and a first electrode layer over the first conductive semiconductor layer. | 05-05-2011 |
| 20110101413 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a semiconductor device. In the method, a growth substrate provided with a single crystal semiconductor thin layer, a support substrate, and a temporary substrate are prepared, the growth substrate, the support substrate, and the temporary substrate are bonded to one another with the support substrate therebetween through functional wafer coupling layers, the growth substrate is lifted off from the single crystal semiconductor thin layer, and the temporary substrate is lifted off from the support substrate. | 05-05-2011 |
| 20110108798 | LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer. | 05-12-2011 |
| 20110133242 | LIGHT EMITTING APPARATUS - A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer. | 06-09-2011 |
| 20110133243 | LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a growth substrate, a first conductive semiconductor layer on the growth substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and an ohmic contact layer having a concavo-convex structure on the second conductive semiconductor layer. | 06-09-2011 |
| 20110140076 | LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer. | 06-16-2011 |
| 20110140077 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, a second conductive semiconductor layer over the active layer, a superlattice structure layer over the second conductive semiconductor layer, and a first current spreading layer including a transmissive conductive thin film over the superlattice structure layer. | 06-16-2011 |
| 20110140102 | SEMICONDUCTOR ELEMENT AND A PRODUCTION METHOD THEREFOR - A semiconductor device according to the embodiment includes a growth substrate; a first buffer layer having a compositional formula of Re | 06-16-2011 |
| 20110140152 | LIGHT EMITTING DEVICE AND A FABRICATION METHOD THEREOF - A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a first passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; a second connection layer electrically connected to the second conductive semiconductor layer through the first passivation layer; a first light extracting structure layer on the first passivation layer and the second connection layer; a first electrode layer electrically connected to the first conductive semiconductor layer; and a second electrode layer on the first light extracting structure layer. | 06-16-2011 |
| 20110147780 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE - A light emitting device includes a transparent conductive layer formed adjacent one of two semiconductor layers having an active layer therebetween. The transparent conductive layer includes first and second transparent conductive regions with different electrical conductivities. The difference in electrical conductivities controls an amount or flow rate of current into the semiconductor layer adjacent the transparent conductive layer, and an electrode is at least partial aligned with the second transparent conductive region. | 06-23-2011 |
| 20110147786 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, a second conductive semiconductor layer over the active layer, a current spreading layer over the second conductive semiconductor layer, a first electrode layer over the first conductive semiconductor, and a second electrode layer over the current spreading layer. | 06-23-2011 |
| 20110151606 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE - A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer. An electrode is formed adjacent the first semiconductor layer in vertical alignment with the second region. | 06-23-2011 |
| 20110163294 | LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer on the support substrate, a current spreading layer on the wafer bonding layer, a second conductive semiconductor layer on the current spreading layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, a surface modification layer on the first conductive semiconductor layer, and a first electrode layer on the surface modification layer. | 07-07-2011 |
