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June-Hong
June-Hong Kim, Busan KR
| Patent application number | Description | Published |
|---|---|---|
| 20110054597 | MITRAL CERCLAGE ANNULOPLASTY APPARATUS - A mitral cerclage annuloplasty apparatus comprises a tissue protective device and a knot delivery device. The tissue protective device comprises a first protective tube and a second protective tube. The knot delivery device comprises a tube wherein a loose knot is looped around its distal end through a hole and wherein tight knot is formed when the distal end of the tube is cut open. Alternatively, the knot delivery device comprises an inner tube and outer tube. The inner tube is insertable and rotatable inside the outer tube. When the tubes are in a closed position by rotating either the outer tube or the inner tube, a hole is created near its distal end. When the tubes are in open position by rotating either the outer tube or the inner tube, the hole joins the opening of the outer tube and lengthens. | 03-03-2011 |
June-Hong Kim, Busan City KR
| Patent application number | Description | Published |
|---|---|---|
| 20100049314 | TRANSCATHETER CORONARY SINUS MITRAL VALVE ANNULOPLASTY PROCEDURE AND CORONARY ARTERY AND MYOCARDIAL PROTECTION DEVICE - A protective device or bridge ( | 02-25-2010 |
June-Hong Park, Seongnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090055579 | Semiconductor memory device for simultaneously programming plurality of banks - Provided is a semiconductor memory device for simultaneously programming a plurality of banks. The semiconductor memory device includes: a memory cell array comprising a plurality of banks; a plurality of data buffers storing a plurality of pieces of program data to be programmed in the corresponding banks; and a plurality of scan latches configured to scan the plurality of program data transmitted from the corresponding data buffers, and configured to generate 1 | 02-26-2009 |
| 20100027336 | Non-volatile memory device and associated programming method using error checking and correction (ECC) - A programming method for a non-volatile memory device includes performing a programming operation to program memory cells, when the programmed memory cells are determined to include memory cells that failed to be programmed and when a current program loop is a maximum program loop, determining whether a number of the memory cells that failed to be programmed corresponds to a number of memory cells that can successfully undergo ECC (error checking and correction), when the number of the memory cells that failed to be programmed is less than the number of the memory cells that can successfully undergo ECC, reading data so as to determine whether a number of error bits of the memory cells that failed to be programmed can successfully undergo ECC, and, when the memory cells that failed to be programmed can successfully undergo ECC, ending a programming operation. | 02-04-2010 |